HF75-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380 STUD The ASI HF75-28S is Designed for .112x45° A B C FEATURES: E • PG = 18 dB min. at 75 W/30 MHz • IMD3 = -30 dBc max. at 75 W (PEP) • Omnigold™ Metalization System ØC E B H I D J G #8-32 UNC-2A MAXIMUM RATINGS F E IC 10 A VCB 60 V VCE 35 V O DIM MINIMUM inches / mm inches / mm A .220 / 5.59 MAXIMUM .230 / 5.84 B .980 / 24.89 C .370 / 9.40 .385 / 9.78 D .004 / 0.10 .007 / 0.18 .330 / 8.38 PDISS 140 W @ TC = 25 C E .320 / 8.13 F .100 / 2.54 .130 / 3.30 TJ -65 OC to +200 OC G .450 / 11.43 .490 / 12.45 H .090 / 2.29 .100 / 2.54 I .155 / 3.94 O O T STG -65 C to +150 C θ JC 1.05 OC/W CHARACTERISTICS SYMBOL ORDER CODE: ASI10607 TC = 25 OC NONETEST CONDITIONS BV CEO IC = 50 mA BV CER IC = 50 mA BV EBO IE = 10 mA ICES VE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V GPE VCE = 25 V IMD3 .175 / 4.45 .750 / 19.05 J PREF = 16 W MINIMUM TYPICAL MAXIMUM RBE = 10 Ω IC = 1.0 A 35 V 60 V 4.0 V 10 f = 1.0 MHz ICQ = 3.2 A Vision = -8 dB Side Band = -16 dB f = 225 MHz UNITS 13.5 5 mA 100 --- 80 pF 14.5 Snd. = -7 dB dB -55 dBc A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1 Specifications are subject to change without notice.