SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FCX591A ISSUE 3 - OCTOBER 1995 PART MARKING DETAIL COMPLEMENTARY TYPE - C P2 FCX491A B ABSOLUTE MAXIMUM RATINGS. C E PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -5 V Peak Pulse Current ICM -2 A Continuous Collector Current IC -1 A Base Current IB -200 mA Power Dissipation at Tamb=25°C Ptot Operating and Storage Temperature Range Tj:Tstg 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS. Breakdown Voltages V(BR)CBO -40 V V(BR)CEO -40 V IC=-10mA* V(BR)EBO -5 V IE=-100µ A IC=-100µ A Collector Cut-Off Current ICBO -100 nA VCB=-30V Emitter Cut-Off Current IEBO -100 nA VEB=-4V Collector-Emitter Cut-Off Current ICES -100 nA VCES=-30V Collector-Emitter Saturation Voltage VCE(sat) -0.2 -0.35 -0.5 V V V IC=-100mA,IB=-1mA* IC=-500mA IB=-20mA* IC=-1A, IB=-100mA* Base-Emitter Saturation Voltage VBE(sat) -1.1 V IC=-1A, IB=-50mA* Base-Emitter Turn-on Voltage VBE(on) -1.0 V IC=-1A, VCE=-5V* Static Forward Current Transfer Ratio hFE 300 300 250 160 30 Transition Frequency fT 150 Output Capacitance Cobo IC=-1mA, IC=-100mA*, IC=-500mA*, VCE=-5V IC=-1A*, IC=-2A*, 800 10 MHz IC=-50mA, VCE=-10V f=100MHz pF VCB=-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% Spice parameter data is available upon request for this device For typical characteristics graphs see FMMT591A datasheet 3 - 93