IRF IRFP048N

PD - 9.1409A
IRFP048N
HEXFET® Power MOSFET
l
l
l
l
l
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 55V
RDS(on) = 0.016Ω
G
Description
ID = 64A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The TO-247 package is preferred for commercialindustrial applications where higher power levels
preclude the use of TO-220 devices. The TO-247 is
similar but superior to the earlier TO-218 package
because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current …
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚…
Avalanche Current…
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ƒ…
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
64
45
210
140
0.90
± 20
270
32
14
5.0
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
1.1
–––
40
°C/W
8/25/97
IRFP048N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Q gs
Q gd
t d(on)
tr
t d(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
55
–––
–––
2.0
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.052
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
78
32
48
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
5.0
LS
Internal Source Inductance
–––
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1900
620
270
V(BR)DSS
∆V(BR)DSS/∆TJ
I GSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, I D = 1mA…
0.016
Ω
VGS = 10V, ID = 37A „
4.0
V
VDS = VGS , ID = 250µA
–––
S
VDS = 25V, I D = 32A…
25
VDS = 55V, VGS = 0V
µA
250
VDS = 44V, VGS = 0V, TJ = 150°C
100
V GS = 20V
nA
-100
VGS = -20V
89
ID = 32A
20
nC VDS = 44V
39
V GS = 10V, See Fig. 6 and 13 „…
–––
VDD = 28V
–––
I D = 32A
ns
–––
RG = 5.1Ω
–––
RD = 0.85Ω, See Fig. 10 „…
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz, See Fig. 5…
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) …
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
45
–––
–––
210
–––
–––
–––
–––
94
360
1.3
140
540
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 37A, VGS = 0V „
TJ = 25°C, IF = 32A
di/dt = 100A/µs „…
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 530µH
RG = 25Ω, IAS = 32A. (See Figure 12)
ƒ ISD ≤ 32A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
… Uses IRFZ48N data and test conditions
D
S
IRFP048N
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
100
10
1
4 .5V
2 0µ s PU LSE W ID TH
TC = 2 5°C
0.1
0.1
1
10
A
100
10
4.5 V
1
0.1
2.5
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
100
TJ = 1 7 5 ° C
10
TJ = 2 5 ° C
1
V DS = 2 5 V
2 0 µ s P U L SE W ID TH
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
1000
5
1
V D S , Drain-to-Source V oltage (V)
Fig 1. Typical Output Characteristics
0.1
20 µs P UL SE W IDTH
TC = 17 5°C
0.1
100
V D S , D rain-to-S ource V oltage (V )
4
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTT OM 4.5V
TOP
I , D ra in -to -S o u rc e C u rre n t (A )
D
I , D ra in -to -S o u rce C u rre n t (A )
D
TOP
10
A
I D = 53 A
2.0
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRFP048N
V GS
C is s
C rs s
C o ss
20
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH O RTE D
= C gd
= C ds + C g d
V G S , G a te -to -S o u rc e V o lta g e (V )
C , C a p a c ita n c e (p F )
4000
I D = 3 2A
V DS= 4 4V
V DS= 2 8V
16
3000
C is s
12
C os s
2000
C rs s
1000
0
10
4
FO R TES T C IR CU IT
SEE FIG U R E 13
0
A
1
8
100
0
V D S , Drain-to-Source V oltage (V)
40
60
80
A
100
Q G , Total Gate Charge (nC )
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
O PER ATIO N IN T HIS AR EA LIMITE D
BY R DS (on)
100
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
20
TJ = 1 75 °C
TJ = 2 5°C
10
10µ s
100
1 00µs
10
1 ms
1
10m s
VG S = 0 V
0.1
0.2
0.6
1.0
1.4
1.8
2.2
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.6
T C = 25 °C
T J = 17 5°C
S in gle Pu lse
1
1
A
10
100
V D S , D rain-to-S ource Voltage (V)
Fig 8. Maximum Safe Operating Area
IRFP048N
70
RD
VDS
I D , Drain Current (A)
60
VGS
D.U.T.
RG
50
+
- VDD
40
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
90%
0
25
50
75
100
125
TC , Case Temperature
150
175
( ° C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response
(Z thJC )
10
1
D = 0.50
0.20
PDM
0.10
0.1
0.05
0.02
0.01
0.01
0.00001
t1
t2
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.001
0.01
0.1
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1
IRFP048N
15 V
L
VDS
D .U .T
RG
IA S
20V
D R IV E R
+
V
- DD
0 .0 1 Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
A
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
700
TO P
600
B OTTO M
ID
13 A
2 2A
32 A
500
400
300
200
100
VD D = 2 5V
0
25
50
V (BR )D SS
A
75
100
125
150
175
Starting T J , Junction Temperature (°C)
tp
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
IRFP048N
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
ƒ
+
‚
-
-
„
+

•
•
•
•
RG
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
*
IRFP048N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
-D -
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
1 5 .90 (.6 2 6)
1 5 .30 (.6 0 2)
-B -
0 .25 (.0 1 0) M
D B M
-A 5 .5 0 (.2 1 7 )
2 0 .3 0 (.80 0 )
1 9 .7 0 (.77 5 )
2X
1
2
5 .3 0 (.2 0 9 )
4 .7 0 (.1 8 5 )
2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
4
NOT ES :
5. 50 (.2 17 )
4. 50 (.1 77 )
1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
T O-247-A C.
3
-C -
1 4.8 0 (.5 8 3 )
1 4.2 0 (.5 5 9 )
2 .4 0 (.09 4 )
2 .0 0 (.07 9 )
2X
5 .45 (.2 1 5)
2X
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
0 .8 0 (. 03 1 )
3 X 0 .4 0 (. 01 6 )
1 .4 0 (.0 56 )
3 X 1 .0 0 (.0 39 )
0 .25 (.0 10 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
C A S
2.6 0 (.10 2 )
2.2 0 (.08 7 )
LEAD AS SIGN MENT S
1
2
3
4
-
G ATE
DRAIN
SO URCE
DRAIN
Part Marking Information
TO-247AC
E X AM PLE : T HI S IS A N IRF 1010
E XAM P LW
E IT
: HT HAISS SISE MB
AN LY
IR F PE 30
IT H AS SE M BL Y
LO T WCO
DE 9B 1M
LOT C ODE 3A 1Q
A
IN TE R NA T ION A L
IN TE R N A TIO N A L
R EC T IF IER
R E C T IF IE R
LO
L O GGO
O
IRIR
FPFE3
0
1010
9246
3A 19B
Q 9 31M
02
A SMSBL
EMY B LY
A SSE
L O TLO TC O DCO
E DE
A
P AR
M BM
ERBE R
P ATRTN UNU
D A TE C OD E
D A TE C O D E
(Y YW W )
(YYW W )
Y Y = YE A R
YY = YE AR
= W
WW
W WW EE
K E EK
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http://www.irf.com/
Data and specifications subject to change without notice.
8/97