DISCRETE SEMICONDUCTORS DATA SHEET M3D392 BLF861 UHF power LDMOS transistor Preliminary specification 1999 Aug 26 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 PINNING - SOT540A FEATURES • High power gain PIN DESCRIPTION • Easy power control 1 drain 1 • Excellent ruggedness 2 drain 2 • Source on underside eliminates DC isolators, reducing common mode inductance 3 gate 1 • Designed for broadband operation (UHF band). 4 gate 2 5 source, connected to flange APPLICATIONS 1 • Communication transmitter applications in the UHF frequency range. 2 5 DESCRIPTION 3 Silicon N-channel enhancement mode lateral D-MOS push-pull transistor in an SOT540A package with ceramic cap. The common source is connected to the mounting flange. 4 Top view MBK777 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit. f (MHz) VDS (V) PL (W) Gp (dB) ηD (%) ∆Gp (dB) 860 32 150 >14 >50 ≤1 860 (ch 69) 32 typ.170 (peak sync) >14 >40 note 1 MODE OF OPERATION CW, class-AB PAL BG (TV), class-AB Notes 1. Sync compression: input sync: ≥33%; output sync: 27 % LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VDS drain-source voltage − 65 V VGS gate-source voltage − ±15 V ID drain current (DC) − 18 A Ptot total power dissipation − 318 W Tstg storage temperature −65 +150 °C Tj junction temperature − 200 °C Tmb ≤ 25 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. 1999 Aug 26 2 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS Rth j-mb thermal resistance from junction to mounting base Rth mb-h thermal resistance from mounting base to heatsink VALUE Tmb = 25 °C; Ptot = 318 W UNIT 0.55 K/W 0.2 K/W CHARACTERISTICS Tj = 25 °C; per section; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT V(BR)DSS drain-source breakdown voltage VGS = 0; ID = 1.5 mA 65 − − V VGSth gate-source threshold voltage VDS = 10 V; ID = 150 mA 4 − 5 V IDSS drain-source leakage current VGS = 0; VDS = 32 V − − 10 µA IDSX drain cut-off current VGS = VGSth + 9 V; VDS = 10 V 18 − − A IGSS gate leakage current VGS = ±15 V; VDS = 0 − − 100 nA gfs forward transconductance VDS = 10 V; ID = 4 A − 4 − S RDSon drain-source on-state resistance VGS = VGSth + 9 V; ID = 4 A − 160 − mΩ Cis input capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 84 − pF Cos output capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 42 − pF Crs feedback capacitance VGS = 0; VDS = 32 V; f = 1 MHz − 6 − pF 200 COS (pF) 160 120 80 40 0 0 10 20 30 40 50 VDS (V) VGS = 0; f = 1 MHz; Tj = 25 °C. Fig.2 Output capacitance as a function of drainsource voltage; typical values per section. 1999 Aug 26 3 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 APPLICATION INFORMATION RF performance in a common source class-AB circuit. T h = 25 °C; Rth mb-h = 0.15 K/W, unless otherwise specified. MODE OF OPERATION f (MHz) VDS (V) IDQ (A) PL (W) Gp (dB) ηD (%) dIM (dBc) ∆Gp (dB) 860 32 1.15 150 >14 >50 − ≤1 f1 = 860 f1 = 860.1 32 1.15 150 (PEP) >14 >40 ≤−30 − 860 (ch 69) 32 1.15 typ.170 (peak sync) >14 >40 − note 1 CW, class-AB 2-tone, class-AB PAL BG (TV), class-AB Notes 1. Sync compression: input sync: ≥33%; output sync: 27 % measured in narrowband testcircuit. Ruggedness in class-AB operation The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 32 V; f = 860 MHz at rated load power. 12 Zi (Ω) 10 ZL (Ω) 8 RL xi 6 8 4 2 ri 0 4 XL -2 -4 0 400 500 600 700 -6 400 800 900 f (MHz) 500 600 700 800 900 f (MHz) CW, class-AB operation; VDS = 32 V; I DQ = 1.15 A; PL = 170 W (total device) ; Th = 25 °C. CW, class-AB operation; V DS = 32 V; I DQ = 1.15 A; PL = 170 W (total device) ; Th = 25 °C. Fig.3 Fig.4 Input impedance as a function of frequency (series components); typical values per section. 1999 Aug 26 4 Load impedance as a function of frequency (series components); typical values per section. Philips Semiconductors Preliminary specification UHF power LDMOS transistor 16 GP (dB) BLF861 0 80 ηD (%) GP dim (dB) 60 -20 8 40 -40 4 20 -60 12 d3 ηD -80 0 200 300 PL (PEP) (W) 0 0 d5 100 0 100 200 300 PL (PEP) (W) Th = 25 °C; VDS = 32V; I DQ = 1.15 A; 2-tone: f 1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB) measured in 860 MHz testcircuit. T h = 25 °C; VDS = 32 V; I DQ = 1.15 A; 2-tone: f 1 = 860 MHz (−6 dB); f2 = 860.1 MHz (−6 dB) measured in 860 MHz testcircuit. Fig.5 Fig.6 Power gain and drain efficiency as functions of peak envelope load power; typical values. 16 GP (dB) GP 80 ηD (%) 60 12 ηD 8 40 4 20 0 0 50 100 150 0 200 PL (W) Th = 25 °C; VDS = 32 V; ; IDQ = 1.15 A; CW, class-AB; f = 860 MHz; measured in 860 MHz testcircuit. Fig.7 Power gain and drain efficiency as functions of load power; typical values. 1999 Aug 26 5 Intermodulation distortion as a function of peak envelope output power; typical values. Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 +Vs R2 C26 C25 +Vbias C19 C18 4.5mm 4mm R3 L7 L1 C16 50 Ohm Input 10mm R5 C1 L18 L9 R4 L11 L5 C24 L13 L15 L3 C2 B1 C3 C4 C5 C6 C7 R1 L19 C9 C8 C14 C11 C12 C13 L6 C17 L14 L8 L2 C20 C21 L17 B2 C15 50 Ohm Output C10 L4 R6 R7 8mm L16 C22 C23 L12 T1 L10 Fig.8 Class-AB broadband testcircuit. List of components COMPONENT DESCRIPTION VALUE C1 multilayer ceramic chip capacitor; note 1 20 pF C2 multilayer ceramic chip capacitor; note 1 4.3 pF C3, C6, C9 Tekelec trimmer C4 multilayer ceramic chip capacitor; note 1 8.2 pF C5 multilayer ceramic chip capacitor; note 1 10 pF C7 multilayer ceramic chip capacitor; note 1 6.8 pF C8 multilayer ceramic chip capacitor; note 1 13 pF 0.6 to 4.5 pF C10, C11 multilayer ceramic chip capacitor; note 2 8.2 pF C12 multilayer ceramic chip capacitor; note 2 3.3 pF C13 multilayer ceramic chip capacitor; note 2 6.8 pF C14 multilayer ceramic chip capacitor; note 2 1 pF C15 multilayer ceramic chip capacitor; note 2 30 pF C16, C17 multilayer ceramic chip capacitor 1 nF C18, C25 multilayer ceramic chip capacitor 100 nF C19, C26 multilayer ceramic chip capacitor 100 µF C20, C21, C22, C23 multilayer ceramic chip capacitor; note 3 100 pF 1999 Aug 26 6 DIMENSIONS CATALOGUE No. Philips Semiconductors Preliminary specification UHF power LDMOS transistor COMPONENT C24 BLF861 DESCRIPTION VALUE DIMENSIONS CATALOGUE No. 1000 µF electrolytic capacitor L1, L2 stripline; note 4 30.6 x 2.4 mm L3, L4 stripline; note 4 28 x 2.4 mm L5, L6 stripline; note 4 10 x 5 mm L7, L8 stripline; note 4 20 x 10 mm L9, L10 stripline; note 4 5.5 x 15 mm L11, L12 stripline; note 4 10 x 10 mm L13, L14 stripline; note 4 15 x 5 mm L15, L16 stripline; note 4 48.5 x 2.4 mm L17 stripline; note 4 10 x 2.4 mm L18 ferrite L19 wire inductor (hairpin) B1 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 70 mm B2 semi rigid coax balun UT70-25 Z = 25 Ω ±1.5 Ω 48.5 mm R1, R7 resistor 10 Ω R2 resistor 1 kΩ R3 resistor 100 kΩ R4 resistor 100 Ω R5, R6 SMD resistor 3.9 Ω height = 8 mm length = 20 mm Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. American Technical Ceramics type 180R or capacitor of same quality. 3. American Technical Ceramics type 100B or capacitor of same quality. 4. The striplines are on a double copper-clad printed-circuit board: Rogers 5880 (εr = 2.2); thickness 0.79 mm. 1999 Aug 26 7 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 80 mm 95 mm 95 mm +Vbias +Vs C26 C25 C19 C18 R2 R3 L18 R7 R4 B2 B1 R5 C2 C3 C1 C17 R6 C4 C5 C6 C8 C7 R1 C9 C10 C11 BLF861 C16 C12 C13 C20 C21 C22 C23 C14 L19 C15 C24 Dimensions in mm. The components are situated on one side of the Rogers 5880 printed circuit board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.9 Printed-circuit board and component layout for the class-AB broadband testcircuit. 1999 Aug 26 8 Philips Semiconductors Preliminary specification UHF power LDMOS transistor 16 GP (dB) BLF861 250 Po sync (W) 80 ηD (%) GP 200 60 12 150 ηD 40 8 100 20 4 50 0 400 500 600 700 0 400 0 800 900 f (MHz) 500 600 700 800 900 f (MHz) Th = 25 °C; VCE = 32V; I DQ = 1.15A; PAL BG signal (TV); Sync compression: input 33 %, output 27 %; measured in broadband testcircuit. T h = 25 °C; VCE = 32V; I DQ = 1.15A; PAL BG signal (TV); Sync compression: input 33 %, output 27 %; measured in broadband testcircuit. Fig.10 Power gain and drain efficiency as functions of frequency; typical values. Fig.11 Peak envelope sync power as a function of frequency; typical values. 16 GP (dB) GP 80 ηD (%) 60 12 ηD 8 40 4 20 0 400 500 600 700 0 800 900 f (MHz) Th = 25 °C; VDS= 32V; IDQ = 1.15 A; CW class-AB; PL = 150 W measured in broadband testcircuit. Fig.12 Power gain and drain efficiency as functions of frequency; typical values. 1999 Aug 26 9 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 PACKAGE OUTLINE Flanged balanced LDMOST package; 2 mounting holes; 4 leads SOT540A D A F D1 U1 B q C w2 M C M H1 1 H c 2 E1 p U2 5 3 A E w1 M A M B M 4 w3 M b Q e 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c mm 5.77 5.00 8.51 8.26 0.15 0.10 inches D D1 e E E1 10.26 10.31 22.05 22.05 10.21 10.06 10.01 21.64 21.64 F H 1.78 1.52 H1 15.75 18.72 14.73 18.47 p Q q U1 U2 w1 w2 w3 3.38 3.12 2.72 2.46 27.94 34.16 33.91 9.91 9.65 0.25 0.51 0.25 0.227 0.335 0.006 0.868 0.868 0.404 0.406 0.070 0.620 0.737 0.133 0.107 1.345 0.390 1.100 0.010 0.020 0.010 0.402 0.197 0.325 0.004 0.852 0.852 0.396 0.394 0.060 0.580 0.727 0.123 0.097 1.335 0.380 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 99-03-30 99-08-27 SOT540A 1999 Aug 26 EUROPEAN PROJECTION 10 Philips Semiconductors Preliminary specification UHF power LDMOS transistor BLF861 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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