Photointerrupter(Transmissive) KPI-511 DESCRIPTION DIMENSIONS The photointerrupter high-performance standard type KPI-511 combines a high-output GaAs IRED with a high sensitivity phototransistor. FEATURES • PWB direct mount type • GAP : 5.0mm APPLICATIONS • Printers • Copiers •A T M • Ticket Vending Machines ABSOLUTE MAXIMUM RATINGS Parameter Rating Unit IF 60 mA IFP 1 A Forward Current Input Output Pulse Forward Current (Ta=25℃) Symbol *1 Reverse Voltage VR 5 V Power Dissipation PD 100 mW Collector Emitter Voltage VCEO 30 V Emitter Collector Voltage VECO 5 V Collector Current IC 40 mA Collector Power Dissipation PC 100 mW TOPR -25 ~ +85 ℃ TSTG -40 ~ +85 ℃ TSOL 260 ℃ Operating Temperature Storage Temperature *2 *2 Soldering Temperature *3 *1. Pulse width : tw≤100µsec.period : T=10msec *2. No icebound or dew *3. For MAX. 5 seconds at the position of 1mm from the package ELECTRO-OPTICAL CHARACTERISTICS Parameter Output Coupled Conditions MIN. TYP. MAX. Unit 1.2 1.7 V VF IF=20mA - Reverse Current IR VR=5V - - 10 µA Capacitance CT f=1KHz - 25 - PF Peak Wavelength ?P - - 940 - nm VCE=10V, 0 Lux - - 10 µA 0.5 - 15 mA Forward Voltage Input (Ta=25℃) Symbol Dark Current ICEO Light Current IL Collector Emitter Saturation Voltage Response Time VCE(SAT) Rise Time tr Fall Time tf VCE=5V, IF= 20mA (Non-shading) IF=20mA, IC=0.1mA - - 0.4 V VCC=5V, IC=2mA, RL=100Ω - 5 - µs - 5 - µs 1/2 Photointerrupter(Transmissive) KPI-511 Collector power dissipation Vs. Ambient temparature Forward current Vs. Forward voltage (㎃) (㎃) 50 0 100 L 50 0 20 40 60 80 (℃) Ambient Ambienttemperature(Ta) temperature(Ta) L ig ht Cu rre nt( IL ) Light Current( I ) 100 0 0.5 1.0 1.5 2.0 Forward voltage(V Forward voltage( VFF)) Light current Vs. Collentor-Emitter voltage IF =50mA 3 IF =40mA IF =30mA 2 IF =20mA 1 0 IF =10mA Re laRelative tiv e lig cu rreInt( I L) lighthtcurrent( L) 100 50 0 0 2 4 6 8 10 12 (V) Collector-Emitter Voltage( VCECE)) Collector-Emitter Voltage(V (㎲) Switching time Vs. Load resistance 0 -20 0 20 40 60 (℃) Ambienttemperature(Ta) temperature( Ta ) Ambient Response time measurementcircuit circuit Response time measurement VCC Input V CC =5V Ta=25˚C IF =10mA 3 10 IC RL VOUT Input 90 % 10 % Output 2 10 td tr tr tf tf Method of ofmeasuring position Method measuring position detection characteristic 101 detection characteristic Optical Axis(X) Optical Axis(X) 102 103 104 (Ω) Load Resistance( RL )L ) Road Resistance(R 1 0 10 20 30 40 (mA) ForwardCurrent(I Current( IFF)) Forward Y (%) X V CE =5V IF =20mA － 0 ＋ 2/2 O pti ca l A xis (Y ) Optical Axis(Y) L L ig ht Cu rre nt( IL ) Light Current( I ) 4 2 Dark current Vs. Ambient temperature (%) 5 3 Relative light current Vs. Ambient temperature (㎃) Ta=25˚ C 4 0 (V) Re la tiv e lig cu rreI nt( IL ) Relative lightht current( L ) 0 R esp on setime titr, metf tr, t f Response V CE =5V Ta=25˚C Ta=25˚ C Forward current( F orward cur rent(I F) I F ) PoPower wer d dissipartion( iss ip ati on( PCP)C ) (㎽) Light current Vs. Forward current VCC =5V C Ta=25˚ IF =10mA 100 VCC =5V C Ta=25˚ IF =10mA 50 0 -2 0 +2 -2 0 Moving distance(L) distance( L ) Moving +2 (mm)