FDN308P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V – 12V). • –20 V, –1.5 A. RDS(ON) = 125 mΩ @ VGS = –4.5 V RDS(ON) = 190 mΩ @ VGS = –2.5 V • Fast switching speed • High performance trench technology for extremely low RDS(ON) Applications • Power management • SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint • Load switch • Battery protection D D S S G TM SuperSOT -3 G Absolute Maximum Ratings Symbol TA=25oC unless otherwise noted Parameter Ratings Units VDSS Drain-Source Voltage –20 V VGSS Gate-Source Voltage ±12 V ID Drain Current –1.5 A – Continuous – Pulsed (Note 1a) –10 Maximum Power Dissipation (Note 1a) PD (Note 1b) TJ, TSTG Operating and Storage Junction Temperature Range 0.5 W 0.46 –55 to +150 °C Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient RθJC Thermal Resistance, Junction-to-Case (Note 1a) 250 °C/W (Note 1) 75 °C/W Package Marking and Ordering Information Device Marking 308 2001 Fairchild Semiconductor Corporation Device FDN308P Reel Size 7’’ Tape width 8mm Quantity 3000 units FDN308P Rev B(W) FDN308P February 2001 Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Typ Max Units Off Characteristics VGS = 0 V, ID = –250 µA –20 V BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1 µA IGSSF Gate–Body Leakage, Forward VGS = 12 V, VDS = 0 V 100 nA IGSSR Gate–Body Leakage, Reverse VGS = –12 V VDS = 0 V –100 nA –1.0 3 –1.5 V mV/°C 86 136 114 125 190 178 mΩ On Characteristics ID = –250 µA,Referenced to 25°C –13 mV/°C (Note 2) VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient VDS = VGS, ID = –250 µA ID = –250 µA,Referenced to 25°C Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = –4.5 V, ID = –1.5 A VGS = –2.5 V, ID = –1.3 A VGS = –4.5 V, ID = –1.5A TJ=125°C VGS = –4.5 V, VDS = –5 V gFS Forward Transconductance VDS = –5 V, ID = –1.5 A 12 VDS = –10 V, f = 1.0 MHz V GS = 0 V, 341 pF 83 pF VDD = –10 V, VGS = –4.5 V, ID = –1 A, RGEN = 6 Ω –0.6 –5 A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn–On Delay Time 43 pF 8 16 ns tr Turn–On Rise Time 10 20 ns td(off) Turn–Off Delay Time 12 22 ns tf Turn–Off Fall Time 8 16 ns Qg Total Gate Charge 3.8 5.4 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –10V, VGS = –4.5 V ID = –1.5 A, 0.8 nC 1.0 nC Drain–Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain–Source Diode Forward Current Drain–Source Diode Forward VGS = 0 V, IS = –0.42 Voltage (Note 2) –0.7 –0.42 A –1.2 V Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 250°C/W when mounted on a 0.02 in2 pad of 2 oz. copper. b) 270°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% FDN308P Rev B(W) FDN308P Electrical Characteristics FDN308P Typical Characteristics 10 -ID, DRAIN CURRENT (A) -3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 VGS = -4.5V -4.0V -3.0V 8 6 -2.5V 4 -2.0V 2 1.8 VGS = -2.5V 1.6 1.4 -3.0V -3.5V 1.2 -4.0V -4.5V 1 0.8 0 0 1 2 3 0 4 2 4 Figure 1. On-Region Characteristics. 8 10 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.34 1.5 ID = -0.8 A ID = -1.5A VGS = -4.5V 1.4 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 6 -ID, DRAIN CURRENT (A) -VDS, DRAIN-SOURCE VOLTAGE (V) 1.3 1.2 1.1 1 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 0.3 0.26 0.22 TA = 125oC 0.18 0.14 TA = 25oC 0.1 0.06 150 1 o 2 TJ, JUNCTION TEMPERATURE ( C) 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) 10 o TA = -55 C VDS = - 5V o 25 C 8 o 125 C 6 4 2 VGS = 0V 1 TA = 125oC 0.1 25oC -55oC 0.01 0.001 0.0001 0 0.5 1 1.5 2 2.5 3 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 3.5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDN308P Rev B(W) Typical Characteristics 500 f = 1MHz VGS = 0 V VDS = -5V ID = -1.5A -10V 400 4 -15V CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 5 3 2 CISS 300 200 COSS 1 100 0 0 CRSS 0 1 2 3 4 0 5 5 10 15 Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 100 20 SINGLE PULSE RθJA = 270°C/W TA = 25°C RDS(ON) LIMIT 1ms 10 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 15 10ms 100ms 1s 1 VGS =-4.5V SINGLE PULSE 0.1 10 10s DC 5 o RθJA = 270 C/W o TA = 25 C 0.01 0 0.1 1 10 100 0.001 0.01 0.1 -VDS, DRAIN-SOURCE VOLTAGE (V) 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) + RθJA RθJA = 270 °C/W 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDN308P Rev B(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G