KSA1242 KSA1242 Medium Power Amplifier Camera Flash Applications • hFE = 100~320 (VCE = -2V, IC = -0.5V) • hFE = 70 (Min.) (VCE = -2V, IC = -4A) • Low Saturation Voltage: VCE(sat) = -1V (Max.) 1 I-PAK 1. Base 2. Collector 3. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Ratings - 35 Units V VCEO Collector-Emitter Voltage - 20 V VEBO Emitter-Base Voltage -8 V IC Collector Current (DC) -5 A ICP Collector Current (Pulse) -8 A PC Collector Dissipation (TC=25°C) 10 W TJ Junction Temperature 150 °C TSTG Storage Temperature - 55 ~ 150 °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO Parameter Collector-Emitter Breakdown Voltage Test Condition IC = - 10mA, IB = 0 BVEBO Emitter-Base Breakdown Voltage IE = - 1mA, IC = 0 ICBO Collector Cut-off Current VCB = - 35V, IE = 0 IEBO Emitter Cut-off Current VEB = - 8V, IC = 0 hFE1 hFE2 DC Current Gain VCE = - 2V, IC = - 0.5A VCE = - 2V, IC = - 4A Min. - 20 Typ. Max. Units V - 100 µA - 100 µA -8 V 100 70 320 VCE(sat) Collector-Emitter Saturation Voltage IC = - 4A, IB = - 0.1A -1 VBE(on) Base-Emitter On Voltage VCE = - 2V, IC = - 4A - 1.5 V fT Current Gain Bandwidth Product VCE = - 2V, IC = - 0.5A 180 MHz Cob Collector Output Capacitance VCB = - 10V, f = 1MHz 50 pF V hFE Classification Classification O Y hFE1 100 ~ 200 160 ~ 320 ©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSA1242 Typical Characteristics 1000 IB = -200mA IB = -150mA VCE = -5V Pulse Test IB = -100mA -6 hFE, DC CURRENT GAIN Ic[A], COLLECTOR CURRENT -8 IB = -70mA IB = -50mA -4 IB = -30mA IB = -20mA -2 IB = -10mA 100 10 IB = 0 -0 -0 -2 -4 -6 1 -0.01 -8 -0.1 -1 -10 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 1. Static Characateristic Figure 2. DC current Gain -8 -10 VCE = -2V IC[A], COLLECTOR CURRENT VCE(sat)[V], SATURATION VOLTAGE IC = 40 IB -1 V CE(sat) -0.1 -0.01 -0.01 -0.1 -1 -6 -4 -2 -0 -0.0 -10 IC[A], COLLECTOR CURRENT -0.4 -0.8 -1.2 -1.6 VBE[V], BASE-EMITTER VOLTAGE Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage -100 16 PC[W], POWER DISSIPATION -10 IC MAX. (Pulse) 1m s IC MAX. (DC) s s DC m m 10 0 10 -1 VCEO MAX IC[A], COLLECTOR CURRENT 14 -0.1 -0.1 -1 -10 VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Safe Operating Area ©2001 Fairchild Semiconductor Corporation 12 10 8 6 4 2 -100 0 0 50 100 150 200 o Tc[ C], CASE TEMPERATURE Figure 6. Power Derating Rev. A1, June 2001 KSA1242 Package Demensions I-PAK 2.30 ±0.20 6.60 ±0.20 5.34 ±0.20 2.30TYP [2.30±0.20] ±0.20 ±0.30 16.10 ±0.20 ±0.30 9.30 0.76 ±0.10 1.80 0.80 MAX0.96 0.50 ±0.10 6.10 ±0.20 (0.50) 0.70 (4.34) ±0.10 0.60 ±0.20 (0.50) 2.30TYP [2.30±0.20] 0.50 ±0.10 Dimensions in Millimeters ©2001 Fairchild Semiconductor Corporation Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2001 Fairchild Semiconductor Corporation Rev. H3