SEMICONDUCTOR KTK596 TECHNICAL DATA N CHANNEL JUNCTION FIELD EFFECT TRANSISTOR CONDENSER MICROPHONE APPLICATION. FEATURES B Expecially Suited for Use in Audio, Telephone. A Capacitor Microphones. O F Excellent Voltage Characteristics. Excellent Transient Characteristics. H G M C MAXIMUM RATING (Ta=25 SYMBOL RATING UNIT VGDO -20 V Gate Current IG 10 mA Drain Current ID 1 mA Drain Power Dissipation PD 400 mW Junction Temperature Tj 150 Tstg -55 150 E E Storage Temperature Range 2 3 N L 1. SOURCE 2. GATE ELECTRICAL CHARACTERISTICS (Ta=25 3. DRAIN TO-92M ) CHARACTERISTIC SYMBOL Gate-Drain Breakdown Voltage V(BR)GDO IG=-100 A Gate-Source Cut-off Voltage VGS(OFF) IDSS (Note) Drain Current 1 K Gate-Drain Voltage D J CHARACTERISTIC ) DIM MILLIMETERS A 3.20 MAX B 4.30 MAX C 0.55 MAX _ 0.15 D 2.40 + E 1.27 F 2.30 _ 0.50 G 14.00 + H 0.60 MAX J 1.05 K 1.45 L 25 M 0.80 N 0.55 MAX O 0.75 TEST CONDITION MIN. TYP. MAX. UNIT -20 - - V VDS=5V, ID=1 A - -0.6 -1.5 V VDS=5V, VGS=0 100 - 480 A Foward Transfer Admittance | yfs | VDS=5V, VGS=0, f=1kHz 0.4 1.2 - mS Input Capacitance Ciss VDS=5V, VGS=0, f=1MHz - 3.5 - pF Reverse Transfer Capacitance Crss VDS=5V, VGS=0, f=1MHz - 0.65 - pF Note : IDSS Classification 2002. 8. 7 A:100 170, B:150 240, C:210 Revision No : 3 350, C1:210~310, C2:290~350, D:320 480 1/3 KTK596 ELECTRICAL CHARACTERISTICS (Ta=25 , VCC=4.5V, RL=1k , Cin=15pF, See Specified Test Circuit.) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Voltage Gain GV Vin=10mV, f=1kHz - -3.0 - dB Reduced Voltage Characteristic GVV Vin=10mV, f=1kHz VCC=4.5V 1.5V - -1.2 -4.0 dB Frequency Characteristic GVF f=1kHz 110Hz - - -1.0 dB Input Resistance Zin f=1kHz 25 - - Output Resistance ZO f=1kHz - - 700 Total Harmonic Distortion THD Vin=30mV, f=1kHz - 1.0 Output Noise Voltage VNO Vin=0, A curve - - M % -110 dB SPECIFIED TEST CIRCUIT Voltage gain. Frequency Characteristic. Distortion. Reduced Voltage Characteristic. 1kΩ VCC =4.5V VCC =1.5V 33uF 15pF A B VTVM V THD 1kΩ OSC For Output Impedance 2002. 8. 7 Revision No : 3 2/3 OUTPUT NOISE VOLTAGE VNO (dB) VNO - I DSS -110 V NO :VCC =4.5V V i =0,A CURVE -112 R L =1.0kΩ I DSS :VDS =5.0V -114 -116 -118 -120 50 70 100 300 500 1k TOTAL HARMONIC DISTORTION THD (%) KTK596 THD - V IN 30 THD : VCC =4.5V f=1kHz I DSS : VDS =5.0V 10 5 3 1 0.7 0.5 0 2 0 -2 1.5V -6 50 70 100 300 500 1k TOTAL HARMONIC DISTORTION THD (%) REDUCED VOLTAGE CHARACTERISTIC G vV (dB) G vV - I DSS -4 240 THD - I DSS 50 30 10 7 THD : V CC =4.5V V in =30mV f=1kHz I DSS : VDS =5.0V 5 3 50 70 100 300 500 1k 700 OUTPUT RESISTANCE Z o (Ω) INPUT RESISTANCE Z i (MΩ) 200 Z o - I DSS Z i :V CC =4.5V V in =10mV f=1kHz I DSS :V DS =5.0V 600 500 400 Z o :VCC =4.5V Vin =10mV 300 f=1kHz I DSS :VDS =5.0V 200 70 100 300 500 DRAIN CURRENT I DSS ( A) 2002. 8. 7 160 Z i - I DSS 32 26 50 120 DRAIN CURRENT I DSS (µA) 34 28 80 DRAIN CURRENT I DSS (µA) 36 30 40 INPUT VOLTAGE V IN (mV) DRAIN CURRENT I DSS (µA) Gv V :VCC =4.5V V in =10mV f=1kHz I DSS :VDS =5.0V A =100µ µA 0 5 2 = I DSS µA =400 S I DS I DSS Revision No : 3 1k 50 70 100 300 500 1k DRAIN CURRENT I DSS (µA) 3/3