This version: Jul. 1998 Previous version: Jan. 1998 E2Q0020-38-71 ¡ electronic components KGF1531 ¡ electronic components KGF1531 Small-Signal Amplifier GENERAL DESCRIPTION The KGF1531 is a high-performance GaAs FET small-signal dual-gate mixer for L-band frequencies that features low voltage operation, low current operation, high conversion gain, and low distortion. The KGF1531 specifications are guaranteed to a fixed matching circuit for 3 V and 1.9 GHz; external impedance-matching circuits are also required. Because of the high 3rd-order intercept point, the KGF1531 is ideal as a small-signal receiving mixer for L-band personal handy phones, such as digital keying cordless phones that require low intermodulation properties. FEATURES • Low voltage and low current operation: 3 V, 8 mA (max.) • Specifications guaranteed as the mixer operation to a fixed matching circuits for 3 V, 1.9 GHz • High conversion gain: 12 dB (typ.) at 1.9 GHz • Low distortion: 3rd-order intercept point = 12.5 dBm (typ.) at 1.9 GHz • Self-bias circuit configuration with built-in source capacitor • Package: 4PSOP PACKAGE DIMENSIONS 1.8±0.1 0.85±0.05 0.36 0.74 0.3 MIN 1.1±0.15 0.4 +0.1 –0.05 1.5±0.15 3.0±0.2 0.6 +0.1 –0.05 0 to 0.15 Package material 1.9±0.1 Lead frame material 0.125 +0.03 –0 2.8±0.15 Epoxy resin Pin treatment 42 alloy Solder plating Solder plate thickness 5 mm or more (Unit: mm) 1/8 ¡ electronic components KGF1531 MARKING (4) (3) L X X (1) (2) NUMERICAL NUMERICAL PRODUCT TYPE LOT NUMBER (1) Gate1 (2) Gate2 (3) Drain (4) GND CIRCUIT D(3) G2(2) G1(1) GND(4) 2/8 ¡ electronic components KGF1531 ABSOLUTE MAXIMUM RATINGS Symbol Condition Unit Min. Max. Drain-source voltage Item VDS Ta = 25°C V — 4.0 Gate-source voltage VGS Ta = 25°C V –3.0 0.4 Drain current IDS Ta = 25°C mA — 50 Total power dissipation Ptot Ta = 25°C mW — 200 Channel temperature Tch — °C — 150 Storage temperature Tstg — °C –45 125 ELECTRICAL CHARACTERISTICS (Ta = 25°C) Item Symbol Condition Unit Min. Typ. Max. Gate-source leakage current IGSS VGS = –3 V mA — — 30 Gate-drain leakage current IGDO VGD(1,2) = –6 V mA — — 30 Drain-source leakage current Drain current IDS(off) IDSS Operating current ID Gate-source cut-off voltage Transconductance VGS(off) gm VDS = 3 V, VGS(1,2) = –2 V mA — — 30 VDS = 3 V, VGS = 0 V mA 15 25 — (*1), PIN = –20 dBm mA — 6.0 8.0 V –1.4 — –0.6 VDS = 3 V, IDS = 100 mA VDS = 3 V, IDS = 6 mA mS 23 30 — F (*1) dB — 5.0 — Conversion gain GC (*1), PRF = –20 dBm Output power PO1 (*1) ISO (*1), PRF = –20 dBm Noise figure dB 10 12 — dBm 0 1.0 — dB — 22 L-R Port to port Isolation R-I 15 28 L-I Third-order intercept point — IP3 (*2), f2 = 1.901 GHz dBm — 12.5 — *1 Self-bias condition: VDD = 3 V ± 0.3 V, VG(1,2) = 0 V, fRF = 1.9 GHz, fLO = 1.65 GHz, PLO = 0 dBm 3/8 ¡ electronic components KGF1531 RF CHARACTERISTICS 4/8 ¡ electronic components KGF1531 5/8 ¡ electronic components KGF1531 Typical S Parameters VDD = 3 V, VG2 = 0 V, ID = 6.13 mA Freq(MHz) MAG(S11) ANG(S11) MAG(S21) ANG(S21) MAG(S12) ANG(S12) MAG(S22) ANG(S22) 100.0 1.002 –2.06 0.485 –156.45 0.001 134.30 0.973 –1.54 200.0 1.006 –4.21 0.660 –163.21 0.001 89.30 0.963 –2.43 300.0 1.003 –6.32 0.735 –171.52 0.002 49.34 0.959 –3.20 400.0 1.003 –8.72 0.777 –178.89 0.004 67.00 0.954 –4.02 500.0 1.005 –10.85 0.804 175.03 0.004 76.91 0.952 –4.71 600.0 0.999 –13.27 0.821 170.22 0.003 77.54 0.953 –5.26 700.0 0.996 –15.36 0.824 164.84 0.005 61.41 0.950 –6.06 800.0 0.995 –17.66 0.838 160.75 0.004 76.89 0.947 –6.90 900.0 0.992 –19.96 0.854 156.05 0.005 59.09 0.950 –7.42 1000.0 0.987 –22.12 0.858 152.38 0.006 62.64 0.947 –8.21 1100.0 0.983 –24.16 0.868 148.70 0.004 62.28 0.949 –8.92 1200.0 0.979 –26.53 0.882 144.57 0.004 67.53 0.948 –9.94 1300.0 0.977 –28.56 0.894 141.09 0.004 71.94 0.951 –10.48 1400.0 0.972 –31.19 0.906 137.65 0.003 88.94 0.950 –11.45 1500.0 0.970 –33.26 0.921 133.84 0.007 107.44 0.950 –12.14 1600.0 0.963 –35.49 0.933 130.62 0.004 76.87 0.950 –13.12 1700.0 0.959 –37.73 0.945 127.43 0.006 74.93 0.950 –13.80 1800.0 0.953 –40.11 0.967 123.66 0.005 106.06 0.948 –14.62 1900.0 0.947 –42.58 0.981 120.52 0.005 104.31 0.947 –15.36 2000.0 0.940 –44.82 0.999 116.72 0.006 128.87 0.948 –16.33 2100.0 0.922 –47.03 1.017 112.95 0.006 106.36 0.949 –17.37 2200.0 0.927 –49.42 1.029 110.02 0.006 115.80 0.948 –17.95 2300.0 0.925 –51.84 1.064 106.74 0.006 153.54 0.948 –18.82 2400.0 0.913 –54.35 1.081 103.70 0.009 152.18 0.949 –19.59 2500.0 0.900 –57.14 1.091 99.12 0.012 137.58 0.949 –20.37 2600.0 0.891 –59.49 1.121 96.98 0.012 146.84 0.952 –21.07 2700.0 0.880 –62.22 1.152 93.75 0.013 150.18 0.957 –22.18 2800.0 0.874 –64.94 1.196 90.37 0.015 151.42 0.950 –22.78 2900.0 0.863 –66.98 1.227 87.35 0.015 158.84 0.957 –24.27 3000.0 0.851 –70.00 1.277 83.46 0.021 149.86 0.955 –24.83 6/8 ¡ electronic components KGF1531 Typical S Parameters VDD = 3 V, VG2 = 0 V, ID = 6.13 mA Frequency : 0.5 to 3.0 GHz Z0 = 50 W 7/8 ¡ electronic components KGF1531 Test Circuit and Bias Configuration for KGF1531 C2 CB T7 CC RG2 T5 T12 T6 (2) LO KGF1531 (3) T8 L1 T9 T10 CC RF IF CC T1 RG1 T2 T3 (1) T4 (4) C3 C4 RFC VDD T11 C1 T1: Z0 = 75 W, E = 25 deg T5: Z0 = 75 W, E = 24 deg T2: Z0 = 100 W, E = 2 deg T6: Z0 = 100 W, E = 72 deg T3: Z0 = 100 W, E = 68 deg T11: Z0 = 100 W, E = 5 deg T4 = T7: Z0 = 100 W, E = 10 deg L1 = 60 nH, C1 = 1.15 pF, C2 = 1.30 pF, C3 = 2.50 pF, C4 = 18.0 pF CC(DC Block) = 1000 pF, CB(By-pass) = 1000 pF, CF(Feed through) = 1000 pF RFC = 60 nH, RG1 = RG2 = 1000 W CB CF f = 1.9GHz T8: Z0 = 100 W, E = 5 deg T9: Z0 = 100 W, E = 65 deg T10: Z0 = 75 W, E = 21 deg T12: Z0 = 75 W, E = 40 deg 8/8