BUK1M200-50SDLD Quad channel TOPFET™ Rev. 01 — 02 April 2003 Product data 1. Product profile 1.1 Description Quad temperature and overload protected logic level power MOSFET in TOPFET™ technology in a 20-pin surface mount plastic package. Product availability: BUK1M200-50SDLD in SOT163-1 (SO20). 1.2 Features ■ ■ ■ ■ Power TrenchMOS™ Overtemperature protection Overload protection Input-source voltage resets latched protection circuitry. ■ Input used to control output stage and supply overload protection circuits ■ ■ ■ ■ 5 V logic compatible input level Current limiting ESD protection for all pins Overfatigue clamping for turn off of inductive loads ■ Low operating input current permits direct drive by micro-controller. 1.3 Applications ■ Low-side driver ■ Low frequency Pulse Width Modulation ■ DC switching ■ General purpose switch for driving lamps, motors, solenoids and heaters. 1.4 Quick reference data Table 1: Quick reference data Symbol Parameter RDSon drain-source on-state resistance [1] Min Max Unit - 200 mΩ Ptot total power dissipation - 9.4 W Tj junction temperature - 150 °C VDS drain-source voltage - 50 V [1] All devices active BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 2. Pinning information dbook, halfpage 20 11 I1 D1 I2 P 1 P S1 10 Top view D2 I3 D3 P S2 I4 D4 P S3 S4 MGX361 MBL801 Fig 2. Symbol; Quad channel low-side TOPFETTM Fig 1. Pinning; SOT163-1 (SO20). 2.1 Pin description Table 2: Pin description Symbol Pin Description n.c. 1, 11, 10, 20 not connected D1 2,19 drain 1 I1 3 input 1 D2 4,17 drain 2 I2 5 input 2 D3 6,15 drain 3 I3 7 input 3 D4 8, 13 drain 4 I4 9 input 4 S4 12 source 4 S3 14 source 3 S2 16 source 2 S1 18 source 1 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Rev. 01 — 02 April 2003 2 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 3. Block diagram 2,19 D1 CHANNEL 1 3 OVER VOLTAGE RIG I1 18 S1 gate VOLTAGE REGULATOR 5 I2 7 I3 SHORT CIRCUIT PROTECTION OVER TEMPERATURE CONTROL LOGIC CHANNEL 2 internal circuitry identical to CHANNEL1 CHANNEL 3 internal circuitry identical to CHANNEL1 sense CROWBAR AND CURRENT LIMIT 4,17 16 D2 S2 6,15 D3 14 S3 8,13 9 I4 CHANNEL 4 internal circuitry identical to CHANNEL1 D4 12 S4 BUK1M200-50SDLD 03pb05 Fig 3. Elements of the quad channel TOPFET switch. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Rev. 01 — 02 April 2003 3 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 4. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions [1] VDS drain-source voltage II input current clamping Ptot total power dissipation Tsp ≤ 25 °C; Figure 4 IIMS non-repetitive peak input current tp ≤ 1 ms Tstg storage temperature junction temperature Tj Overvoltage clamping [2] Min Max Unit - 50 V - 3 mA - 9.4 W - 10 mA −55 +150 °C normal operation [3] - 150 °C [4] EDS(CL)S non-repetitive drain-source clamping energy Tamb = 25 °C; IDM ≤ ID(lim) (refer to Table 5); inductive load [5] - 100 mJ EDS(CL)R repetitive drain-source clamping energy Tsp ≤ 125 °C; IDM = 50 mA; f = 250 Hz [5] - 5 mJ VIS ≥ 4 V - 35 V Tsp ≤ 25 °C; VIS = 0 V - 2 A C = 250 pF; R = 1.5 kΩ - 2 kV Overload protection [6] VDS(prot) protected drain-source voltage Reverse diode source (diode forward) current IS Electrostatic discharge Vesd [1] [2] [3] [4] [5] [6] electrostatic discharge voltage Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy. For all devices active. Not in an overload condition with drain current limiting. At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients. Single active device. With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by means of drain current limiting and by activating the overtemperature protection. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Rev. 01 — 02 April 2003 4 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 03aa17 120 Pder (%) 80 40 0 0 50 100 150 200 Tsp (°C) P tot P der = ----------------------- × 100% P ° tot ( 25 C ) Fig 4. Normalized total power dissipation as a function of solder point temperature. 5. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter Rth(j-sp) thermal resistance from junction to mounted on thermo clad board solder point. one device active Conditions all devices active Typ Max Unit - - 45 K/W - - 13.3 K/W © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Min Rev. 01 — 02 April 2003 5 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 6. Static characteristics Table 5: Static characteristics Limits are valid for −40 °C ≤ Tsp ≤ +150 °C and typical values for Tsp = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VIS = 0 V; ID = 10 mA 50 - - V VIS = 0 V; ID = 200 mA; tp ≤ 300 µs; δ ≤ 0.01; Figure 16 50 62 70 V VIS = 0 V; VDS = 40 V - - 100 µA - 0.05 10 µA - - 380 mΩ - 150 200 mΩ 0.6 - 2.4 V 1.1 1.6 2.1 V VIS = 5 V 100 220 400 µA VIS = 4 V 80 195 330 µA 200 400 650 µA µA Off-state output characteristics VDS(CL) IDSS drain-source clamping voltage drain-source leakage current Tsp = 25 °C; Figure 17 On-state output characteristic RDSon drain-source on-state resistance VIS ≥ 4 V; tp ≤ 300 µs; δ ≤ 0.01; ID = 100 mA; Figure 5 and 6 Tsp = 25 °C Input characteristics VIS(th) [1] input-source threshold voltage VDS = 5 V; ID = 1 mA Tsp = 25 C; Figure 10 input-source current IIS normal operation protection latched VIS = 5 V VIS = 3 V; Figure 11 and 12 130 250 430 [2] 1.5 2 2.9 V [6] 10 40 100 µs 5.5 - 8.5 V - 33 - kΩ VIS = 5 V; Figure 18 0.8 1.3 1.7 A VIS = 4.5 V 0.7 - - A 4 V ≤ VIS ≤ 5.5 V; 0.6 - 1.8 A trst ≥ 100 µs; Figure 15 VIS(rst) input-source reset voltage trst(latch) latch reset time VIS(CL) input-source clamping voltage II = 1.5 mA; Figure 16 [3] input-gate resistance RIG Overload protection characteristic ID(lim) [4] drain current limiting Short circuit load protection characteristics POV(th) Td(sc) overload power threshold short circuit response time VIS = 5 V [5] - 17 - W VIS = 5 V; Figure 14 [7] - 1.6 - ms 4 V ≤ VIS ≤ 5.5 V; ID ≥ 280 mA or VDS ≥ 100 mV; Figure 9 150 165 - °C IS = 2 A; VIS = 0 V; tp = 300 µs - 0.83 1.1 V Overtemperature protection characteristic Tj(th) threshold junction temperature Source-drain diode characteristic VSD [1] [2] [3] source-drain (diode forward) voltage The supply for the logic and overload protection is taken from the input. The input voltage below which the overload protection circuits will be reset. Not directly measurable from the device terminals. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Rev. 01 — 02 April 2003 6 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ [4] [5] [6] [7] The TOPFET switches off to protect itself when one of the overload thresholds is exceeded. It remains latched off until reset by the input. Power threshold for protection to operate. To reset the latched state, the input-source voltage is reduced from 5 V to 1 V. Trip time t(trip) varies with overload dissipation POV according to the formula t(trip) = td(sc) / [POV / POV(th) - 1] 03pa71 2.5 03pa73 500 a RDSon (mΩ) 2 375 1.5 250 1 125 0.5 0 0 -50 0 50 100 T ( C) 150 j ° 0 2 4 6 8 VIS (V) Tj = 25 °C; ID = 100 mA; tp = 300 µs R DSon a = ----------------------------R DSon ( 25°C ) Fig 5. Normalized drain-source on-state resistance factor as a function of junction temperature. 03pa74 1.6 Fig 6. Drain-source on-state resistance as a function of input-source voltage; typical values. 03pa75 1.8 VIS = 7 V ID (A) 6V 1.2 5V ID (A) 1.2 4V 0.8 0.6 0.4 0 0 0 10 20 VDS (V) 30 Tj = 25 °C; tp = 300 µs 0 4 6 VIS (V) 8 Tj = 25 °C; VDS = 10 V; tp = 300 µs Fig 7. Output characteristics; drain current as a function of drain-source voltage; typical values. Fig 8. Transfer characteristics; drain current as a function of input-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data 2 Rev. 01 — 02 April 2003 7 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 03pa76 200 03pa77 2.5 Tj(th) (°C) VIS(th) max. (V) 2 190 typ. 1.5 180 min. 1 170 0.5 0 160 0 2 4 6 8 -50 10 0 50 VIS (V) 100 T ( C) 150 j ° ID = mA; VDS = 5 V Fig 9. Overtemperature protection characteristic; threshold junction temperature as a function of input-source voltage; typical values. 03pa78 1 Fig 10. Input-source threshold voltage as a function of junction temperature. 03pa79 10 IIS (mA) II (mA) 0.8 8 0.6 6 (1) 4 0.4 2 0.2 (2) 0 0 0 2 4 6 V (V) IS Tj = 25 °C 8 0 2 4 6 V (V) IS 8 Tj = 25 °C (1) Protection latched. (2) Normal operation. Fig 11. Input-source current as a function of input-source voltage; typical values. Fig 12. Input clamping characteristic; input current as a function of input-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Rev. 01 — 02 April 2003 8 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 03pa80 500 03pa81 4000 1 / td(sc) IIS (mA) -1 (1) (s ) 400 3000 300 2000 (2) (3) 200 (4) 1000 100 0 −50 0 0 50 100 Tj (°C) 0 150 5.5 11 16.5 22 POV (W) VIS ≥ 4 V; Tj ≤ 125 °C (1) VIS = 5 V; device in latched mode. (2) VIS = 3 V; device in latched mode. (3) VIS = 5 V; device in normal mode. (4) VIS = 4 V; device in normal mode. Fig 13. Input-source current as a function of junction temperature; typical values. 03pa82 2.4 Fig 14. Reciprocal of short circuit response time as a function of total overload power; single device dissipating; typical values 03pa83 400 ID (mA) VIS(rst) (V) 300 2.2 200 2 100 0 1.8 -50 20 90 Tj (°C) 160 tr = 100 µs 57 61 63 65 67 VDS (V) VIS = 0 V; tp = 300 µs Fig 15. Input-source reset voltage as a function of junction temperature; typical values. Fig 16. Overvoltage clamping characteristic; drain current as a function of drain-source voltage; typical values. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data 59 Rev. 01 — 02 April 2003 9 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 03pa84 10-5 03pa72 1.8 IDSS (A) max. ID (A) typ. 10-6 1.2 min. 10-7 0.6 10-8 -50 0 50 100 Tj (°C) 0 150 0 40 80 120 160 Tsp (°C) VIS = 5 V VDS = 40 V; VIS = 0 V Fig 17. Drain-source leakage current as a function of junction temperature; typical values. Fig 18. Drain current limiting as a function of solder point temperature. 7. Dynamic characteristics Table 6: Switching characteristics Symbol Parameter Conditions Min Typ Max Unit - 5 12 µs - 11 30 µs Turn-on measured from the input going HIGH RL = 50 Ω; ID = 250 mA; VIS = 5 V; Figure 19 and 20; Tsp = 25 °C td(on) turn-on delay time tr rise time td(off) turn-off delay time - 25 65 µs tf fall time - 14 35 µs td(on) td(off) tf RL tr 90% VDS VDS 10% VDD P 90% VIS VIS 10% MBL854 MBL853 Fig 19. Test circuit for resistive load switching times. Fig 20. Resistive load switching waveforms. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Rev. 01 — 02 April 2003 10 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 8. Package outline SO20: plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 D E A X c HE y v M A Z 20 11 Q A2 A (A 3) A1 pin 1 index θ Lp L 10 1 e detail X w M bp 0 5 10 mm scale DIMENSIONS (inch dimensions are derived from the original mm dimensions) UNIT A max. A1 A2 A3 bp c D (1) E (1) e HE L Lp Q v w y mm 2.65 0.30 0.10 2.45 2.25 0.25 0.49 0.36 0.32 0.23 13.0 12.6 7.6 7.4 1.27 10.65 10.00 1.4 1.1 0.4 1.1 1.0 0.25 0.25 0.1 0.9 0.4 inches 0.10 0.012 0.096 0.004 0.089 0.01 0.019 0.013 0.014 0.009 0.51 0.49 0.30 0.29 0.050 0.419 0.043 0.055 0.394 0.016 0.043 0.039 0.01 0.01 0.004 0.035 0.016 Z (1) θ 8o 0o Note 1. Plastic or metal protrusions of 0.15 mm maximum per side are not included. REFERENCES OUTLINE VERSION IEC JEDEC SOT163-1 075E04 MS-013 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-05-22 99-12-27 Fig 21. SOT163-1. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Rev. 01 — 02 April 2003 11 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 9. Revision history Table 7: Revision history Rev Date 01 20030402 CPCN Description - Product datasheet (9397 750 10956) © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Product data Rev. 01 — 02 April 2003 12 of 14 BUK1M200-50SDLD Philips Semiconductors Quad channel TOPFET™ 10. Data sheet status Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 11. Definitions customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Trademarks 12. Disclaimers TOPFET — is a trademark of Koninklijke Philips Electronics N.V. TrenchMOS — is a trademark of Koninklijke Philips Electronics N.V. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors Contact information For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: [email protected]. Product data Fax: +31 40 27 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. 9397 750 10956 Rev. 01 — 02 April 2003 13 of 14 Philips Semiconductors BUK1M200-50SDLD Quad channel TOPFET™ Contents 1 1.1 1.2 1.3 1.4 2 2.1 3 4 5 6 7 8 9 10 11 12 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 2 Block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics. . . . . . . . . . . . . . . . . . . 5 Static characteristics. . . . . . . . . . . . . . . . . . . . . 6 Dynamic characteristics . . . . . . . . . . . . . . . . . 10 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 © Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 02 April 2003 Document order number: 9397 750 10956