GT60N321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT60N321 High Power Switching Applications The 4th Generation Unit: mm · FRD included between emitter and collector · Enhancement-mode · High speed IGBT : tf = 0.25 µs (typ.) (IC = 60 A) · Low saturation voltage: VCE (sat) = 2.3 V (typ.) (IC = 60 A) FRD : trr = 0.8 µs (typ.) (di/dt = −20 A/µs) Maximum Ratings (Ta = 25°C) Characteristics symbol Rating Unit Collector-Emitter Voltage VCES 1000 V Gate-Emitter Voltage VGES ±25 V DC IC 60 1 ms ICP 120 DC IECF 15 1 ms IECFP 120 Collector Power Dissipation (Tc = 25°C) PC 170 W Junction Temperature Tj 150 °C Storage Temperature Tstg -55~150 °C ¾ 0.8 N･m Collector Current Emitter-Collector Forward Current Screw Torque A A JEDEC ― JEITA ― TOSHIBA 2-21F2C Weight: 9.75 g (typ.) Equivalent Circuit Collector Gate Emitter 1 2002-01-18 GT60N321 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate Leakage Current IGES VGE = ±25 V, VCE = 0 ¾ ¾ ±500 nA Collector Cut-off Current ICES VCE = 1000 V, VGE = 0 ¾ ¾ 1.0 mA VGE (OFF) IC = 60 mA, VCE = 5 V 3.0 ¾ 6.0 V Collector-Emitter Saturation Voltage VCE (sat) (1) IC = 10 A, VGE = 15 V ¾ 1.6 2.3 V Collector-Emitter Saturation Voltage VCE (sat) (2) IC = 60 A, VGE = 15 V ¾ 2.3 2.8 V VCE = 10 V, VGE = 0, f = 1 MHz ¾ 4000 ¾ pF ¾ 0.23 ¾ ¾ 0.33 ¾ ¾ 0.25 0.40 ¾ 0.70 ¾ IEC = 15 A, VGE = 0 ¾ 1.5 2.0 V IF = 15 A, VGE = 0, di/dt = -20 A/ms ¾ 0.8 2.5 ms Input Capacitance Cies Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Emitter-Collector Forward Voltage Reverse Recovery Time tr 51 W ton tf 15 V 0 -15 V toff VECF trr 10 9 Gate-Emitter Cut-off Voltage ms 600 V Thermal Resistance Rth(j-c) ¾ ¾ ¾ 0.74 °C/W Thermal Resistance Rth(j-c) ¾ ¾ ¾ 4.0 °C/W 2 2002-01-18 GT60N321 IC – VCE VCE – VGE 100 10 10 V 15 V Collector-emitter voltage Collector current IC (A) 20 V 60 VGE = 7 V 40 20 0 0 1 2 3 Collector-emitter voltage 4 VCE Common emitter Tc = -40°C (V) 80 Common emitter Tc = 25°C VCE 25 V 8 80 6 4 30 2 IC = 10 A 0 0 5 60 5 (V) 10 80 6 4 60 2 IC = 10 A 30 5 10 15 20 Common emitter Tc = 125°C (V) VCE 8 Collector-emitter voltage Collector-emitter voltage VCE (V) Common emitter Tc = 25°C 8 80 6 4 60 2 30 0 0 25 IC = 10 A 5 10 IC – VGE 20 25 (V) VCE (sat) – Tc 4 Common Common Emitter VCE = 5 V Collector-emitter saturation voltage VCE (sat) (V) (A) 15 Gate-emitter voltage VGE (V) 100 IC (V) 10 Gate-emitter voltage VGE Collector current 25 VCE – VGE VCE – VGE 80 20 Gate-emitter voltage VGE 10 0 0 15 60 40 25 20 40 emitter VGE = 15 V 3 80 60 30 2 IC = 10 A 1 TC = 125°C 0 0 2 4 Gate-emitter voltage VGE 6 0 -40 8 (V) 0 40 80 Case temperature Tc 3 120 160 (°C) 2002-01-18 GT60N321 Switching time – RG 10 Common emitter RL = 2.5 W TC = 25°C VCC = 600 V IC = 60 A VGG = ±15 V TC = 25°C (ms) 16 Common emitter VCE = 150 V 12 Switching time Collector-emitter voltage VCE (V) (´10 V) Gate-emitter voltage VGE (V) VCE, VGE – QG 20 8 toff ton 1 tr tf 100 V 4 50 V 0 0 50 100 150 200 Gate charge 250 QG 300 350 0.1 1 400 10 100 1000 Gate resistance RG (W) (nC) Switching Time – IC C – VCE 10 10000 Common emitter (pF) 1 Capacitance C (ms) Switching time Common emitter VCC = 600 V RG = 51 W VGG = ±15 V TC = 25°C toff ton 1000 100 Coes tf Cres 10 1 tr 10 100 1000 Collector-emitter voltage 0.1 0 40 20 60 Collector current IC VGE = 0 V f = 1 MHz TC = 25°C Cies VCE 10000 (V) 80 (A) Reverse Bias SOA 300 Safe Operating Area Tj < = 125°C 1000 * Single 10 non-repetitive pulse Tc = 25°C curves must be derated linearly with increase in temperature. 1 10 1 10 ms* 100 ms* 1 ms* 10 ms* 100 Collector- emitter voltage VCE 1000 50 30 Collector current DC Operation (A) IC max (Pulsed)* IC max 100 (Continuous) IC (A) IC Collector current VGE = ±15 V RG = 10 W 100 10 5 3 1 1 3000 (V) 30 100 300 Collector-emitter voltage 4 1000 VCE 3000 (V) 2002-01-18 GT60N321 10 Common コレクタ接地 collector Tc = 25°C 2 1 Diode Stage 0 IGBT Stage 10-1 10-2 10-3 10-5 80 60 40 -40 20 Tc = 125°C 10-4 10-3 10-2 Pulse width 10-1 10 tw 0 10 1 10 25 2 0 0.0 (s) 0.5 Irr, trr – IECF 1.2 trr Irr 7 0.8 6 0.4 60 Emitter-collector forward current 0 100 80 IECF Peak reverse recovery current 8 trr 40 0.6 20 0.4 10 0.2 0 50 100 di/dt 5 0.8 30 0 (A) 1 Common emitter IECF = 60 A Tc = 25°C trr Irr (A) (ms) 1.6 trr 9 40 2.5 50 Reverse recovery time Irr (A) Peak reverse recovery current Common emitter di/dt = -20 A/ms Tc = 25°C 20 2.0 Irr, trr – di/dt 2 0 1.5 Collector-emitter forward voltage VECF (V) 10 5 1.0 (ms) 10 IECF – VECF 100 150 200 Reverse recovery time 10 Rth (t) – tw 3 Emitter-collector forward current IECF (A) Transient thermal impedance Rth (t) (°C/W) 10 0 250 (A/ms) 2002-01-18 GT60N321 RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer’s own risk. · The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. · The information contained herein is subject to change without notice. 6 2002-01-18 This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.