IRF IRG4PC30

PD 91459B
IRG4PC30F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Fast: Optimized for medium operating
frequencies ( 1-5 kHz in hard switching, >20
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
VCES = 600V
VCE(on) typ. = 1.59V
G
@VGE = 15V, IC = 17A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
TO-247AC
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
EARV
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Parameter
Max.
Units
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Gate-to-Emitter Voltage
Reverse Voltage Avalanche Energy S
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
600
31
17
120
120
± 20
10
100
42
-55 to + 150
V
A
V
mJ
W
°C
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
Wt
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
Typ.
Max.
–––
0.24
–––
6 (0.21)
1.2
–––
40
–––
Units
°C/W
g (oz)
1
1229//00
IRG4PC30F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ
VCE(ON)
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
IGES
Parameter
Min. Typ.
Collector-to-Emitter Breakdown Voltage
600
—
Emitter-to-Collector Breakdown Voltage T 18
—
Temperature Coeff. of Breakdown Voltage — 0.69
— 1.59
Collector-to-Emitter Saturation Voltage
— 1.99
—
1.7
Gate Threshold Voltage
3.0
—
Temperature Coeff. of Threshold Voltage
—
-11
Forward Transconductance U
6.1
10
—
—
Zero Gate Voltage Collector Current
—
—
—
—
Gate-to-Emitter Leakage Current
—
—
Max. Units
Conditions
—
V
VGE = 0V, IC = 250µA
—
V
VGE = 0V, IC = 1.0A
—
V/°C VGE = 0V, IC = 1.0mA
VGE = 15V
1.8
IC = 17A
—
IC = 31A
See Fig.2, 5
V
—
IC = 17A , TJ = 150°C
6.0
VCE = VGE, IC = 250µA
— mV/°C VCE = VGE, IC = 250µA
—
S
VCE = 100V, IC = 17A
250
VGE = 0V, VCE = 600V
µA
2.0
VGE = 0V, VCE = 10V, TJ = 25°C
1000
VGE = 0V, VCE = 600V, TJ = 150°C
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
51
77
IC = 17A
7.9
12
nC
VCC = 400V
See Fig. 8
19
28
VGE = 15V
21
—
15
—
TJ = 25°C
ns
200 300
IC = 17A, VCC = 480V
180 270
VGE = 15V, RG = 23Ω
0.23 —
Energy losses include "tail"
1.18 —
mJ See Fig. 10, 11, 13, 14
1.41 2.0
20
—
TJ = 150°C,
16
—
IC = 17A, VCC = 480V
ns
290
—
VGE = 15V, RG = 23Ω
350
—
Energy losses include "tail"
2.5
—
mJ See Fig. 13, 14
13
—
nH
Measured 5mm from package
1100 —
VGE = 0V
74
—
pF
VCC = 30V
See Fig. 7
14
—
ƒ = 1.0MHz
Notes:
Q Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
T Pulse width ≤ 80µs; duty factor ≤ 0.1%.
U Pulse width 5.0µs, single shot.
S Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4PC30F
50
F o r b o th :
Triangular w ave:
D uty c y c le : 5 0 %
T J = 1 2 5 °C
T sink = 9 0 °C
G a te d riv e a s s p e c ifie d
40
C la m p v o lta g e :
8 0 % o f ra te d
Load Current (A)
P o w er D is s ip a tio n = 2 4 W
30
S q u a re w a v e :
60 % of ra ted
volta ge
20
Id e a l d io d e s
10
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK)
1000
I C , Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
TJ = 25°C
100
T J = 150°C
10
V G E = 15V
20µs PULSE WIDTH
1
1
A
10
VC E , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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100
TJ = 150°C
T J = 25°C
10
V C C = 50V
5µs PULSE WIDTH A
1
5
6
7
8
9
10
11
12
13
VG E , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4PC30F
2.5
V G E = 15 V
V C E , Collector-to-Emitter Voltage (V)
Maxim um D C Collector C urrent (A )
40
30
20
10
0
V G E = 15V
80µs PULSE WIDTH
I C = 34A
2.0
I C = 17A
1.5
I C = 8.5A
A
1.0
25
50
75
100
125
150
-60
T C , C ase Tem perature (°C)
Fig. 4 - Maximum Collector Current vs. Case
Temperature
-40
-20
0
20
40
60
80
100 120 140 160
T J , Junction Temperature (°C)
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
T he rm al R e sp ons e (Z thJ C )
10
1
D = 0 .5 0
0 .2 0
PD M
0 .1 0
0 .1
0 .0 1
0 .0 0 0 0 1
t
0 .0 5
0 .0 2
0 .0 1
1
t2
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N o te s :
1 . D u ty fa c to r D = t
1
/t
2
2 . P e a k T J = P D M x Z th J C + T C
0 .0 0 0 1
0 .0 0 1
0 .0 1
0 .1
1
10
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC30F
20
2000
Cres = Cce
Coes = Cce + Cgc
C, Capacitance (pF)
1600
C ies
1200
800
C oes
400
C res
A
0
1
V C E = 400V
I C = 17A
SHORTED
V G E , Gate-to-Emitter Voltage (V)
VGE = 0V
f = 1 MHz
Cies = Cge + Cgc + Cce
10
16
12
8
4
A
0
100
0
10
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
10
= 480V
= 15V
= 25°C
= 17A
1.45
1.40
1.35
A
1.30
0
10
20
30
40
50
R G , Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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40
50
60
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VC C
VG E
TJ
IC
30
Q g , Total Gate Charge (nC)
V C E , Collector-to-Emitter Voltage (V)
1.50
20
60
R G = 23 Ω
V G E = 15V
V C C = 480V
I C = 34A
I C = 17A
1
I C = 8.5A
A
0.1
-60
-40
-20
0
20
40
60
80
100
120
140
160
TJ , Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4PC30F
RG
TJ
V CC
V GE
5.0
=
=
=
=
1000
23 Ω
150°C
480V
15V
I C , C ollecto r-to -Em itter Cu rrent (A)
Total Switching Losses (mJ)
6.0
4.0
3.0
2.0
1.0
A
0.0
0
10
20
30
I C , Collector-to-Emitter Current (A)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
6
40
VGGE E= 2 0V
T J = 12 5 °C
100
S A FE O P E R A TIN G A R E A
10
1
1
10
100
1000
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 12 - Turn-Off SOA
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IRG4PC30F
L
D .U .T.
VC *
50V
RL =
0 - 480V
1 00 0V
480V
4 X [email protected]°C
480µF
960V
Q
R
* Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax )
* Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor
w ill inc rea se to obta in ra ted Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
IC
L
D river*
D .U .T.
VC
Fig. 14a - Switching Loss
Test Circuit
50V
1000V
Q
* Driver same type
as D.U.T., VC = 480V
R
S
Q
R
9 0%
1 0%
S
VC
90 %
Fig. 14b - Switching Loss
t d (o ff)
10 %
IC 5%
Waveforms
tf
tr
t d (o n )
t=5µ s
E on
E o ff
E ts = ( Eo n +E o ff )
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7
IRG4PC30F
Case Outline and Dimensions — TO-247AC
3 .6 5 (.1 4 3 )
3 .5 5 (.1 4 0 )
0 .2 5 (.0 1 0 ) M D B M
1 5 .9 0 (.6 2 6 )
1 5 .3 0 (.6 0 2 )
-B-
-A5 .5 0 (.2 1 7)
2 0 .3 0 (.8 0 0 )
1 9 .7 0 (.7 7 5 )
2X
1
2
-D-
5 .3 0 ( .2 0 9 )
4 .7 0 ( .1 8 5 )
2 .5 0 (.0 8 9 )
1 .5 0 (.0 5 9 )
4
5 .5 0 (.2 17 )
4 .5 0 (.1 77 )
LEAD
1234-
3
-C-
*
1 4 .8 0 (.5 8 3 )
1 4 .2 0 (.5 5 9 )
2 .4 0 ( .0 9 4 )
2 .0 0 ( .0 7 9 )
2X
5 .4 5 (.2 1 5 )
2X
4 .3 0 (.1 7 0 )
3 .7 0 (.1 4 5 )
3X
1 .4 0 (.0 5 6 )
1 .0 0 (.0 3 9 )
0 .2 5 (.0 1 0 ) M
3 .4 0 (.1 3 3 )
3 .0 0 (.1 1 8 )
N O TE S :
1 D IM E N S IO N S & T O L E R A N C IN G
P E R A N S I Y 14 .5 M , 1 9 8 2 .
2 C O N T R O L L IN G D IM E N S IO N : IN C H .
3 D IM E N S IO N S A R E S H O W N
M ILL IM E T E R S (IN C H E S ).
4 C O N F O R M S T O JE D E C O U T L IN E
T O -2 4 7 A C .
*
A S S IG N M E N T S
GATE
COLLE CTO R
E M IT T E R
COLLE CTO R
L O N G E R L E A D E D (2 0m m )
V E R S IO N A V A IL A B LE (T O -24 7 A D )
T O O R D E R A D D "-E " S U F F IX
T O P A R T N U M B ER
0 .8 0 (.0 3 1 )
0 .4 0 (.0 1 6 )
2 .6 0 ( .1 0 2 )
2 .2 0 ( .0 8 7 )
3X
C A S
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n s ion s in M illim e te rs a n d (In c h es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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