SMF5V0A to SMF51A Vishay Semiconductors Surface Mount ESD Protection Diodes Features • • • • For surface mounted applications Low-profile package e3 Optimized for LAN protection applications Ideal for ESD protection of data lines in accordance with IEC 61000-4-2 (IEC801-2) • Ideal for EFT protection of data lines in accordance with IEC 61000-4-4 (IEC801-4) • IEC 61000-4-2 (ESD) 15 kV (air) 8 kV (contact) • Low incremental surge resistance, excellent clamping capability • 200 W peak pulse power capability with a 10/1000 µs waveform, repetition rate (duty cycle): 0.01 % • Very fast response time • High temperature soldering guaranteed: 260 °C/ 10 seconds at terminals • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 17249 Mechanical Data Case: JEDEC DO-219AB (SMF®) Plastic case Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity:The band denotes the cathode, which is positive with respect to the anode under normal TVS operation Mounting Position: Any Weight: approx. 15 mg Packaging Codes/Options: GS18 / 10 k per 13 " reel (8 mm tape), 50 k/box GS08 / 3 k per 7 " reel (8 mm tape), 30 k/box Absolute Maximum Ratings Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Peak pulse power dissipation Symbol Value Unit 10/1000 µs waveform1) Test condition PPPM 200 W 8/20 µs waveform PPPM 1000 W 1) Peak pulse current 10/1000 µs waveform1) IPPM next Table A Peak forward surge current 8.3 ms single half sine-wave IFSM 20 A Symbol Value Unit RthJA 180 K/W Tstg, TJ - 55 to + 150 °C 1) Non-repetitive current pulse and derated above TA = 25 °C Thermal Characteristics Ratings at 25 °C, ambient temperature unless otherwise specified Parameter Thermal resistance Test condition 2) Operation junction and storage temperature range 2) Mounted on epoxy glass PCB with 3 x 3 mm, Cu pads ( ≥ 40 µm thick) Document Number 85811 Rev. 2.0, 29-Apr-05 www.vishay.com 1 SMF5V0A to SMF51A Vishay Semiconductors Electrical Characteristics Ratings at 25 °C ambient temperature unless otherwise specified. VF = 3.5 V at IF = 12 A (uni-directional only) Partnumber Marking Code UNI Breakdown Test Current Voltage1) Stand-off Voltage Maximum Reverse Leakage Maximum Peak Pulse Surge Maximum Clamping Voltage Junction Capacitance Cj @ VR = 0 V, f = 1 MHz Current 2,3) V(BR) @ IT VWM @ VWM ID IPPM @ IPPM VC V mA V µA A V min SMF5V0A AE 6.40 10 5.0 400 21.7 9.2 1030 SMF6V0A AG 6.67 10 6.0 400 19.4 10.3 1010 SMF6V5A AK 7.22 10 6.5 250 17.9 11.2 850 SMF7V0A AM 7.78 10 7.0 100 16.7 12.0 750 SMF7V5A AP 8.33 1.0 7.5 50 15.5 12.9 730 SMF8V0A AR 8.89 1.0 8.0 25 14.7 13.6 670 SMF8V5A AT 9.44 1.0 8.5 10 13.9 14.4 660 SMF9V0A AV 10.0 1.0 9.0 5.0 13.5 15.4 620 SMF10A AX 11.1 1.0 10 2.5 11.8 17.0 570 SMF11A AZ 12.2 1.0 11 2.5 11.0 18.2 460 SMF12A BE 13.3 1.0 12 2.5 10.1 19.9 440 SMF13A BG 14.4 1.0 13 1.0 9.3 21.5 420 SMF14A BK 15.6 1.0 14 1.0 8.6 23.2 370 SMF15A BM 16.7 1.0 15 1.0 8.2 24.4 350 SMF16A BP 17.8 1.0 16 1.0 7.7 26.0 340 SMF17A BR 18.9 1.0 17 1.0 7.2 27.6 310 SMF18A BT 20.0 1.0 18 1.0 5.8 29.2 305 SMF20A BV 22.2 1.0 20 1.0 6.2 32.4 207 SMF22A BX 24.4 1.0 22 1.0 5.6 35.5 265 SMF24A BZ 26.7 1.0 24 1.0 5.1 38.9 240 SMF26A CE 28.9 1.0 26 1.0 4.8 42.1 225 SMF28A CG 31.1 1.0 28 1.0 4.4 45.4 210 SMF30A CK 33.3 1.0 30 1.0 4.1 48.4 205 SMF33A CM 36.7 1.0 33 1.0 3.8 53.3 190 SMF36A CP 40.0 1.0 36 1.0 3.4 58.1 180 SMF40A CR 44.4 1.0 40 1.0 3.1 64.5 165 SMF43A CT 47.8 1.0 43 1.0 2.9 69.4 160 SMF45A CV 50.0 1.0 45 1.0 2.8 72.7 155 SMF48A CX 53.3 1.0 48 1.0 2.6 77.4 150 SMF51A CZ 56.7 1.0 51 1.0 2.4 82.4 145 1) Pulse test tp ≤ 5.0 ms 2) Surge current waveform 10/1000 µs 3) All terms and symbols are consistent with ANSI/IEEE C62.35 www.vishay.com 2 pF typ Document Number 85811 Rev. 2.0, 29-Apr-05 SMF5V0A to SMF51A Vishay Semiconductors Typical Characteristics (Tamb = 25 °C unless otherwise specified) 10 PPPM - Peak Pulse Power (kW) Non-repetitive Pulse Waveform shown in Fig. 3 TA = 25 °C 1 0.1 0.1µs 1.0µs 10µs 100µs 1.0ms 10ms 17250 td - Pulse Width (sec.) Peak Pulse Power (PPP) or Current (IPPM) Derating in Percentage, % Figure 1. Peak Pulse Power Rating 100 75 50 25 0 0 25 50 17251 75 100 125 150 175 200 TA - Ambient Temperature (°C) Figure 2. Pulse Derating Curve IPPM - Peak Pulse Current, % IRSM 150 TJ = 25 °C Pulse Width (td) is defined as the point where the peak current decays to 50% of IPPM tr = 10 µs Peak Value IPPM 100 Half Value - IPP 2 IPPM 50 10/1000 sec. Waveform as defined by R.E.A. td 0 0 1.0 17252 2.0 3.0 4.0 t - Time (ms) Figure 3. Pulse Waveform Document Number 85811 Rev. 2.0, 29-Apr-05 www.vishay.com 3 SMF5V0A to SMF51A Vishay Semiconductors Package Dimensions in mm (Inches) 0.85 (0.033) 0.35 (0.014) 3.9 (0.152) 3.5 (0.137) 5 0.16 (0.006) 0.99 (0.039) 0.97 (0.038) Z 5 Cathode Band Top View Detail Z enlarged 1.9 (0.074) 1.7 (0.066) 1.2 (0.047) 0.8 (0.031) 0.10 max 2.9 (0.113) 2.7 (0.105) ISO Method E Mounting Pad Layout 1.6 (0.062) 1.3 (0.051) 1.4 (0.055) 17247 www.vishay.com 4 Document Number 85811 Rev. 2.0, 29-Apr-05 SMF5V0A to SMF51A Vishay Semiconductors Blistertape for SMF PS 18513 Document Number 85811 Rev. 2.0, 29-Apr-05 www.vishay.com 5 SMF5V0A to SMF51A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 6 Document Number 85811 Rev. 2.0, 29-Apr-05