VISHAY UGF8BT

NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
UGF8AT THRU UGF8DT
ULTRAFAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage - 50 to 200 Volts
FEATURES
ITO-220AC
0.188 (4.77)
0.172 (4.36)
0.405 (10.27)
0.383 (9.72)
0.110 (2.80)
0.100 (2.54)
0.131 (3.39)
DI
0.122 (3.08)
0.140 (3.56)
DIA.
0.130 (3.30)
0.600 (15.5)
0.580 (14.5)
PIN
1
0.350 (8.89)
0.330 (8.38)
0.670 (17.2)
0.646 (16.4)
2
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
Forward Current - 8.0 Amperes
♦ Plastic package has Underwriters Laboratories
Flammability Classification 94V-0
♦ Ideally suited for use in very high frequency
switching power supplies, inverters and as a free
wheeling diode
♦ Ultrafast reverse
recovery time for high efficiency
♦ Soft recovery characteristics
♦ Excellent high temperature switching
♦ Glass passivated chip junction
♦ High temperature soldering guaranteed:
250°C, 0.25" (6.35mm) from case for 10 seconds
0.110 (2.80)
0.100 (2.54)
0.060 (1.52)
0.037 (0.94)
0.027 (0.69)
0.022 (0.55)
0.014 (0.36)
0.205 (5.20)
0.195 (4.95)
PIN 1
PIN 2
Dimensions in inches and (millimeters)
MECHANICAL DATA
Case: ITO-220AC molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: As marked
Mounting Position: Any
Weight: 0.08 ounce, 2.24 grams
Mounting Torque: 5in. - lbs. max.
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
UGF8AT
UGF8BT
UGF8CT
UGF8DT
UNITS
Maximum repetitive peak reverse voltage
VRRM
50
100
150
200
Volts
Maximum RMS voltage
VRMS
35
70
105
140
Volts
Maximum DC blocking voltage
VDC
50
100
150
200
Volts
Maximum average forward rectified current
at TC=100°C
I(AV)
8.0
Amps
Peak forward surge current
8.3 ms single half sine-wave superimposed
on rated load (JEDEC Method) at TC=100°C
IFSM
150.0
Amps
Maximum instantaneous forward voltage at 8.0
20A
5.0A, TJ=150°C
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
TA=100°C
(NOTE 2)
Maximum recovered stored charge
(NOTE 2)
10.0
300.0
µA
trr
20.0
ns
TJ=25°C
TJ=100°C
trr
30.0
50.0
ns
TJ=25°C
TJ=100°C
Qrr
20.0
45.0
nC
Typical junction capacitance (NOTE 3)
Typical thermal resistance (NOTE 4)
Operating junction and storage temperature range
CJ
45.0
pF
RΘJC
5.0
°C/W
TJ, TSTG
-55 to+150
°C
NOTES: (1) Reverse recovery test conditions: IF=0.5A, IR=1.0A, Irr=0.25A
(2) Trr and Qrr measured at IF=8.0A, VR=30V, di/dt=50A/µs, Irr=10% IRM for meaurement of trr
(3) Measured at 1.0 MHZ and applied reverse voltage of 4.0 Volts
(4) Thermal resistance from junction to case
4/98
Volts
IR
Maximum reverse recovery time (NOTE 1)
Maximum reverse recovery time
VF
1.00
1.20
0.95
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
FIG. 1 - FORWARD CURRENT DERATING
CURVE
12
1,000
RESISTIVE OR INDUCTIVE LOAD
TC=100°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED CURRENT,
AMPERES
RATINGS AND CHARACTERISTIC CURVES UGF8AT THRU UGF8DT
10
8.0
6.0
4.0
2.0
0
0
25
50
75
100
125
150
100
175
10
AMBIENT TEMPERATURE, °C
100
10
1
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT,
AMPERES
100
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
10
1
0.1
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
NUMBER OF CYCLES AT 60 Hz
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
1,000
TJ=125°C
100
TJ=100°C
10
1
TJ=25°C
0.1
0.01
0
di/dt=100A/µs
di/dt=20A/µs
40
di/dt=50A/µs
di/dt=100A/µs
di/dt=50A/µs
di/dt=150A/µs
30
20
di/dt=20A/µs
10
trr
Qrr
0
25
50
75
80
100
100
di/dt= 150A/µs
50
0
60
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
100
125
150
JUNCTION TEMPERATURE, °C
175
JUNCTION CAPACITANCE, pF
RECOVERED STORED CHARGE/REVERSE
RECOVERY TIME nC/ns
FIG. 5 - REVERSE SWITCHING
CHARACTERISTICS
IF=4.0A
VR=30V
40
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
60
20
TJ=25°C
f=1.0 MHZ
Vsig=50mVp-p
10
1
0.1
0.01
0.1
1
10
REVERSE VOLTAGE, VOLTS
100