TCND3000 Vishay Semiconductors Reflective Sensor for Touchless Switch Description TCND3000 is a reflective optical sensor for applications using the HALIOS® (High Ambient Light Independent Optical System) principle. It consists of an infrared emitter and a photodetector forming the optical sensing path. According to the HALIOS principle a second infrared emitter is used for compensation of disturbing ambient light. Optoelectronic parameters of the sensor are matched to the corresponding integrated circuit E909.01, manufactured by ELMOS Semiconductor AG (www.elmos.de). Features • Package type: Surface mount • Detector type: PIN Photodiode • Dimensions: e4 L 4.83 mm x W 2.54 mm x H 2.21 mm • Peak operating distance: 20 mm • Peak operating range: 10 mm to 20 mm • Typical output current under test: IC = 5.6 µA • Lead (Pb)-free soldering released • Lead (Pb)-free component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC • Emitter wavelength 885 nm • Daylight blocking filter • Touch distance: 10 mm*) • Proximity distance: 20 mm*) • High ambient light suppression for sunlight: ≤ 200 klx • High ambient light suppression for CIE standard illuminant A: ≤ 100 klx • Minimum order quantity 800 pcs, 800 pcs/reel Applications • Optical switches for general purpose *) Using E909.01 interface ASIC and Kodak grey card with 20 % diffuse reflection Document Number 84606 Rev. 1.2, 23-Aug-06 www.vishay.com 1 TCND3000 Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Sensor Parameter Test condition Symbol Value Unit PV 180 mW Storage temperature range Tstg - 40 to + 100 °C Operating temperature range Tamb - 40 to + 85 °C Thermal resistance junction/ambient RthJA 450 K/W Tsd 260 °C Tamb ≤ 25 °C Power dissipation Soldering temperature acc. figure 7 IR Emitter LEDS (Transmitter) Symbol Value Unit Reverse voltage Parameter Test condition VRS 5 V Forward current IFS 50 mA IFS 100 mA Tjs 105 °C Symbol Value Unit Ts = 8 µs tps = 4 µs Peak forward current Junction temperature IR Emitter LEDC (Compensation) Parameter Test condition Reverse voltage VRC 5 V Forward current IFC 50 mA IFC 100 mA Tjs 105 °C Unit Ts = 8 µs tpc = 4 µs Peak forward current Junction temperature Detector Symbol Value Reverse voltage Parameter Test condition VRD 5 V Junction temperature TjD 105 °C PV - Power Dissipation (mW) 200 150 R thJA 100 50 0 0 20 40 60 80 100 Tamb - Ambient Temperature (°C) Figure 1. Power Dissipation Limit vs. Ambient Temperature www.vishay.com 2 Document Number 84606 Rev. 1.2, 23-Aug-06 TCND3000 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Sensor Parameter Test condition Symbol Min Typ. Max Unit Light current Kodak Grey Card 20 % diffuse reflection distance: 1 cm IFS = 10 mA ICA 1.2 µA Optical crosstalk sensing path no reflective medium IFS = 10 mA ICA 0.9 µA Compensation current IFC = 2 mA ICR 5 µA IR Emitter LEDS (Transmitter) Parameter Test condition Symbol Forward voltage IFS = 10 mA tp = 20 ms VFS Reverse voltage IRS = 10 µA VRS Min Typ. Max Unit 1.3 V CjS 50 pF IFS = 10 mA tp = 20 ms Ie 2 IFS = 10 mA λps Spectral bandwidth IFS = 10 mA Δλs 42 nm Virtual source diameter DIN EN ISO 1146/1:2005 Ø 1.4 mm Junction capacitance Radiant intensity ϕS Angle of half intensity Peak wavelength 5 875 V 22 mW/sr ± 20 deg 885 nm IR Emitter LEDC (Compensation) Parameter Test condition Symbol Forward voltage IFC = 10 mA tpC = 20 ms VFC Reverse voltage IRC = 10 µA VRC Junction capacitance Min Typ. Max Unit 1.3 V CjC 50 pF 5 V Peak wavelength IFC = 10 mA λpC 885 nm Spectral bandwidth IFC = 10 mA ΔλC 42 nm Detector Parameter Test condition Symbol Forward voltage IFD = 50 mA VFD Breakdown voltage IRD = 100 µA E=0 V(BR) Reverse dark current VRD = 10 V, E = 0 Min Typ. Max 1.0 1.3 5 Unit V V Ir0 1 Ira 5.6 µA TKIra 0.2 %/K Angle of half sensitivity ϕD ± 20 deg Wavelength of peak sensitivity λp 910 nm λ0.5 790...1020 nm Reverse light current Ee = 1 mW/cm λ = 870 nm VRD = 5 V Temp. coefficient of Ira VRD = 5 V λ = 870 nm Range of spectral bandwidth Document Number 84606 Rev. 1.2, 23-Aug-06 2 10 nA www.vishay.com 3 TCND3000 Vishay Semiconductors Typical Characteristics Tamb = 25 °C unless otherwise specified 10° 20° Ie, rel - Relative Radiant Intensity 30° 40° 1.0 0.9 50° 0.8 60° 70° 0.7 80° 94 8883 0.6 0.4 0.2 0 0.2 0.4 S( )rel - Relative Spectral Responsivity 0° 1.2 1.0 0.8 0.6 0.4 0.2 0.0 600 0.6 700 800 900 1000 1100 λ - Wavelength (nm) Figure 2. Relative Radiant Intensity vs. Angular Displacement 0° 10° Figure 4. Relative Spectral Sensitivity vs. Wavelength 20° 3.5 40° 1.0 0.9 50° 0.8 60° ICA- Photocurrent (µA) Srel - Relative Intensity 30° 3 2.5 I FS = 10 mA 2 1.5 1 Crosstalk Level 70° 0.7 80° 0.5 0 20181 0.6 0.4 0.2 0 0.2 0.4 0.6 1 10 100 d - Distance (mm) Figure 3. Relative Radiant Sensitivity vs. Angular Displacement www.vishay.com 4 Figure 5. Photocurrent vs. Distance Document Number 84606 Rev. 1.2, 23-Aug-06 TCND3000 Vishay Semiconductors Application Circuit Figure 6. Test circuit Document Number 84606 Rev. 1.2, 23-Aug-06 www.vishay.com 5 TCND3000 Vishay Semiconductors Dimensions www.vishay.com 6 Document Number 84606 Rev. 1.2, 23-Aug-06 TCND3000 Vishay Semiconductors Reflow Solder Profiles Drypack Temperature (°C) Preheat 280 260 240 220 200 180 160 140 120 100 Reflow 260 °C Devices are packed in moisture barrier bags (MBB) to prevent products from moisture absorption during transportation and storage. Each bag contains a desiccant. Cooling 250 °C 210 °C Floor Life 145 °C 125 °C ~ 20 s 80 60 40 20 0 ~ 30 s ~ 40 s 120 s 0 30 60 90 120 150 180 210 240 270 300 Time (s) 19030 Figure 7. Lead (Pb)-Free (Sn) Reflow Solder Profile 948625 300 max. 240 °C 10s ca. 230 °C Temperature (°C) 250 Floor life (time between soldering and removing from MBB) must not exceed the time indicated in J-STD-020. TCND3000 is released for: Moisture Sensitivity Level 4, according to JEDEC, J-STD-020. Floor Life: 72 h Conditions: Tamb < 30 °C, RH < 60 % Drying In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or label. Devices taped on reel dry using recommended conditions 192 h at 40 °C (± 5 °C), RH < 5 % or 96 h at 65 °C (± 5 °C), RH < 5 %. 200 215 °C 150 max 40s max. 160 °C 100 90s - 120s Lead Temperature 50 full line dotted 2 K/s - 4 K/s : typical :process limits 0 0 50 100 150 200 250 Time (s) Figure 8. Lead Tin (SnPb) Reflow Solder Profile Document Number 84606 Rev. 1.2, 23-Aug-06 www.vishay.com 7 TCND3000 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 84606 Rev. 1.2, 23-Aug-06 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1