IRF IRG4BC20MDS

PD -94116
IRG4BC20MD-S
Short Circuit Rated
Fast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Rugged: 10µsec short circuit capable at VGS=15V
• Low VCE(on) for 4 to 10kHz applications
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
• Industry standard D2Pak package
VCES = 600V
VCE(on) typ. = 1.85V
G
Benefits
• Offers highest efficiency and short circuit
capability for intermediate applications
• Provides best efficiency for the mid range frequency
(4 to 10kHz)
• Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
• High noise immune "Positive Only" gate driveNegative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
@VGE = 15V, IC = 11A
E
n-cha nn el
D2Pak
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 100°C
tsc
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current Q
Clamped Inductive Load Current R
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
Units
600
18
11
36
36
7.0
10
36
± 20
60
24
-55 to +150
V
A
µs
A
V
W
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
RθJA
Wt
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Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
Min.
Typ.
Max.
-------------------------
----------0.50
----2 (0.07)
2.1
2.5
-----80
------
Units
°C/W
g (oz)
1
3/6/01
IRG4BC20MD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Collector-to-Emitter Breakdown VoltageS 600
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---VCE(on)
Collector-to-Emitter Saturation Voltage ---------Gate Threshold Voltage
4.0
VGE(th)
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---gfe
Forward Transconductance T
3.0
Zero Gate Voltage Collector Current
---ICES
---VFM
Diode Forward Voltage Drop
------IGES
Gate-to-Emitter Leakage Current
----
V(BR)CES
Typ.
---0.67
1.85
2.46
2.07
----11
3.6
------1.4
1.3
----
Max. Units
Conditions
---V
VGE = 0V, IC = 250µA
---- V/°C VGE = 0V, I C = 1.0mA
2.1
IC = 11A
VGE = 15V
---V
IC = 18A
See Fig. 2, 5
---IC = 11A, TJ = 150°C
6.5
VCE = VGE, IC = 250µA
---- mV/°C VCE = VGE, IC = 250µA
---S
VCE = 100V, IC = 11A
250
µA
VGE = 0V, VCE = 600V
2500
VGE = 0V, VCE = 600V, TJ = 150°C
1.7
V
IC = 8.0A
See Fig. 13
1.6
IC = 8.0A, TJ = 150°C
±100 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Irr
Q rr
di(rec)M/dt
2
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Min.
---------------------------------------------------------------Diode Peak Reverse Recovery Current ------Diode Reverse Recovery Charge
------Diode Peak Rate of Fall of Recovery
---During tb
----
Typ.
39
5.3
20
21
37
463
340
0.41
2.03
2.44
19
41
590
600
3.49
7.5
460
54
14
37
55
3.5
4.5
65
124
240
210
Max. Units
Conditions
59
IC = 11A
8.0
nC VCC = 400V
See Fig. 8
30
VGE = 15V
---TJ = 25°C
---ns
IC = 11A, VCC = 480V
690
VGE = 15V, RG = 50Ω
510
Energy losses include "tail" and
---diode reverse recovery.
---mJ See Fig. 9, 10, 11, 18
3.7
---TJ = 150°C, See Fig. 9, 10, 11, 18
---ns
IC = 6.5A, VCC = 480V
---VGE = 15V, RG = 50Ω
---Energy losses include "tail" and
---mJ diode reverse recovery.
---nH Measured 5mm from package
---VGE = 0V
---pF
VCC = 30V
See Fig. 7
---ƒ = 1.0MHz
55
ns
TJ = 25°C See Fig.
90
TJ = 125°C
14
IF = 8.0A
5.0
A
TJ = 25°C See Fig.
8.0
TJ = 125°C
15
VR = 200V
138
nC TJ = 25°C See Fig.
360
TJ = 125°C
16
di/dt 200A/µs
---- A/µs TJ = 25°C See Fig.
---TJ = 125°C
17
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IRG4BC20MD-S
1.5
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 13W
Load Current ( A )
1.0
60% of rated
voltage
0.5
Ideal diodes
0.0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
T J = 150°C
T J = 25°C
VGE= 15V
20µs PULSE WIDTH
0.1
0.1
1.0
VCE , Collector-to-Emitter Voltage (V)
Fig. 2 - Typical Output Characteristics
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I C , Collector-to-Emitter Current (A)
IC , Collector-to Emitter Current (A)
100
10.0
TJ = 150 °C
10
TJ = 25 °C
1
V CC = 50V
5µs PULSE WIDTH
0.1
6
8
10
12
14
16
VGE , Gate-to-Emitter Voltage (V)
Fig. 3 - Typical Transfer Characteristics
3
IRG4BC20MD-S
4.0
VCE , Collector-to Emitter Voltage (V)
Maximum DC Collector Current(A)
20
15
10
5
VGE = 15V
80µs PULSE WIDTH
IC = 22A
3.0
IC = 11A
2.0
IC = 5.5A
1.0
0
25
50
75
100
125
150
-60 -40 -20
TC , Case Temperature ( °C)
0
20
40
60
80 100 120 140
TJ , Junction Temperature (°C)
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Fig. 5 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
PDM
0.05
0.1
0.02
0.01
0.01
0.00001
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t2
2. Peak TJ = PDM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20MD-S
800
VGE , Gate-to-Emitter Voltage (V)
600
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
Cies
400
200
Coes
VCC = 400V
I C = 11A
16
12
8
4
Cres
0
1
10
0
100
0
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
30
40
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
2.5
100
VCC = 480V
VGE = 15V
TJ = 25°C
Total Switching Losses (mJ)
Total Switching Losses (mJ)
10
QG , Total Gate Charge (nC)
I C = 11A
2.4
2.3
RG = 50Ω
VGE = 15V
VCC = 480V
IC = 22A
10
IC = 11A
IC = 5.5A
1
0.1
0
10
20
30
40
R G, Gate Resistance ( Ω )
Fig. 9 - Typical Switching Losses vs. Gate
Resistance
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50
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5
IRG4BC20MD-S
100
VGE = 20V
T J = 125°
RG = 50Ω
TJ = 150°C
VGE = 15V
8.0
VCC = 480V
C, Capacitance(pF)
Total Switching Losses (mJ)
10.0
6.0
4.0
SAFE OPERATING AREA
10
2.0
0.0
1
5
10
15
20
25
1
IC , Collector Current (A)
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig. 11 - Typical Switching Losses vs.
Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Insta ntaneo us F orw ard Cu rrent - I F (A )
100
10
TJ = 15 0°C
TJ = 12 5°C
TJ = 2 5°C
1
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Fo rwa rd V oltage D rop - V F M (V )
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20MD-S
100
100
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
80
I F = 8 .0A
I IR R M - (A )
t rr - (ns)
IF = 16 A
60
I F = 16 A
10
I F = 8.0 A
40
I F = 4 .0A
I F = 4 .0 A
20
0
100
1
100
1000
d i f /d t - (A /µ s)
1000
d i f /d t - (A /µ s )
Fig. 14 - Typical Reverse Recovery vs. dif/dt
Fig. 15 - Typical Recovery Current vs. dif/dt
10000
500
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
VR = 2 0 0 V
T J = 1 2 5 °C
T J = 2 5 °C
d i(re c)M /d t - (A /µs)
Q R R - (n C )
400
300
I F = 16 A
200
I F = 8 .0A
I F = 4 .0A
1000
I F = 8.0 A
I F = 16 A
100
IF = 4.0 A
0
100
di f /dt - (A /µs)
Fig. 16 - Typical Stored Charge vs. dif/dt
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1000
100
100
1000
di f /dt - (A /µs)
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
7
IRG4BC20MD-S
90% Vge
+Vge
Same ty pe
device as
D .U.T.
Vce
Ic
9 0 % Ic
10% Vce
Ic
5 % Ic
430µF
80%
of Vce
D .U .T.
td (o ff)
tf
Eoff =
∫
t1 + 5 µ S
V c e ic d t
t1
Fig. 18a - Test Circuit for Measurement of
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id d t
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
E o n = V ce ie d t
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Eon, td(on), tr
8
∫
t4
V d id d t
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
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IRG4BC20MD-S
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit
L
1000V
D.U.T.
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Figure 19. Clamped Inductive Load Test
Circuit
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Figure 20. Pulsed Collector Current
Test Circuit
9
IRG4BC20MD-S
D2Pak Package Outline
1 0.54 (.4 15)
1 0.29 (.4 05)
1.4 0 (.055 )
M AX.
-A-
1.3 2 (.05 2)
1.2 2 (.04 8)
2
1.7 8 (.07 0)
1.2 7 (.05 0)
1
1 0.16 (.4 00 )
RE F.
-B -
4.69 (.1 85)
4.20 (.1 65)
6.47 (.2 55 )
6.18 (.2 43 )
15 .4 9 (.6 10)
14 .7 3 (.5 80)
3
2.7 9 (.110 )
2.2 9 (.090 )
2.61 (.1 03 )
2.32 (.0 91 )
5 .28 (.20 8)
4 .78 (.18 8)
3X
1.40 (.0 55)
1.14 (.0 45)
3X
5 .08 (.20 0)
0.5 5 (.022 )
0.4 6 (.018 )
0 .93 (.03 7 )
0 .69 (.02 7 )
0 .25 (.01 0 )
M
8.8 9 (.3 50 )
R E F.
1.3 9 (.0 5 5)
1.1 4 (.0 4 5)
B A M
M IN IM U M R E CO M M E ND E D F O O TP R IN T
1 1.43 (.4 50 )
NO TE S:
1 D IM EN S IO N S A FTER SO L D ER D IP.
2 D IM EN S IO N IN G & TO LE RA N C IN G PE R A N S I Y1 4.5M , 198 2.
3 C O N TRO L LIN G D IM EN SIO N : IN C H .
4 H E ATSINK & L EA D D IM EN S IO N S D O N O T IN C LU D E B UR R S.
LE A D A SS IG N M E N TS
1 - G A TE
2 - D R AIN
3 - S O U RC E
8.89 (.3 50 )
17 .78 (.70 0)
3 .8 1 (.15 0)
2 .08 (.08 2)
2X
2.5 4 (.100 )
2X
D2Pak Part Marking Information
IN TE R N A TIO N A L
R E C T IF IE R
LO G O
A S S E M B LY
LO T C O D E
10
A
PART NUM BER
F530S
9 24 6
9B
1M
DATE CODE
(Y YW W )
YY = Y E A R
W W = W EEK
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IRG4BC20MD-S
Notes:
Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)
R VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
S Pulse width ≤ 80µs; duty factor ≤ 0.1%.
T Pulse width 5.0µs, single shot.
D2Pak Tape & Reel Information
TR R
1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
4.1 0 (.1 6 1 )
3.9 0 (.1 5 3 )
F E ED D IR E C TIO N 1 .8 5 (.0 73 )
1 .6 5 (.0 65 )
1 .6 0 (.06 3)
1 .5 0 (.05 9)
1 1.6 0 (.45 7)
1 1.4 0 (.44 9)
0.3 68 (.01 45 )
0.3 42 (.01 35 )
15.4 2 (.60 9)
15.2 2 (.60 1)
2 4.30 (.9 5 7)
2 3.90 (.9 4 1)
TR L
1 0.90 (.42 9)
1 0.70 (.42 1)
1.75 (.06 9)
1.25 (.04 9)
4.72 (.1 3 6)
4.52 (.1 7 8)
16 .10 (.63 4)
15 .90 (.62 6)
F E E D D IR E C TIO N
13.50 (.532)
12.80 (.504)
2 7.40 (1.079)
2 3.90 (.941)
4
330 .00
(14.173)
M AX .
60.00 (2.3 62)
MIN .
NO T ES :
1. C OM F OR MS TO EIA-418.
2. C ON TR O LLING DIM ENS IO N: M ILLIM ETER .
3. D IME NSIO N M EAS URE D @ HUB .
4. IN CLU DE S F LAN GE DISTO RT IO N @ O U TER E DG E.
26 .40 (1.039)
24 .40 (.961)
30.40 (1.197)
M AX.
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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11