Infrared Light Emitting Diodes LNA2701L GaAs Bi-directional Infrared Light Emitting Diode Unit : mm 8˚ 8˚ .5˚ 26 .5 26 ˚ For light source of VCR (VHS System) 0.5 max. Two-way directivity 2.8±0.2 2-C0.5 8˚ ø1.4±0.2 2-R0.7 1.0 Light source for tape end sensor of VCR and video camera recorder of VHS system Light source for 2-bit photo sensor 0.8 0.15 2-0.7 max. 0.5±0.1 2-0.5±0.1 (1.5) Applications 16.9±1.0 Not soldered 2.0 Thin type package modified from LN59 8˚ Long lifetime, high reliability 8˚ Small resin package 2.8±0.2 1.3±0.2 8˚ 3.8±0.2 2.4±0.2 0.8 High-power output, high-efficiency : PO = 1.8 mW (min.) 8˚ Features 2 1 2.0 1: Anode 2: Cathode Absolute Maximum Ratings (Ta = 25˚C) Parameter Symbol Ratings Unit PD 75 mW Forward current (DC) IF 50 mA Pulse forward current IFP* 1 A Power dissipation * Reverse voltage (DC) VR 3 V Operating ambient temperature Topr –25 to +65 ˚C Storage temperature Tstg – 30 to +85 ˚C f = 100 Hz, Duty cycle = 0.1 % Electro-Optical Characteristics (Ta = 25˚C) Parameter * Symbol Conditions min typ max Unit I e* IF = 50mA Peak emission wavelength λP IF = 20mA 940 nm Spectral half band width ∆λ IF = 20mA 50 nm Forward voltage (DC) VF IF = 50mA 1.3 Reverse current (DC) IR VR = 3V Capacitance between pins Ct VR = 0V, f = 1MHz Radiant intensity at center 1.2 mW/sr 35 1.5 V 10 µA pF Radiant intensity Ie shows each value of intensity I1 and I2 in two directions. I1 I2 1 Infrared Light Emitting Diodes LNA2701L ∆IF — Ta tw = 10µs Ta = 25˚C Ta = 25˚C 20 1 10 –1 ∆IF (mA) Pulse forward current 30 10 60 Forward current 50 IFP (A) ∆IF (mA) Allowable forward current 80 70 40 40 50 30 20 10 10 0 20 40 60 Ambient temperature 80 10 –2 10 –1 100 1 Ta (˚C ) (2) 10 –1 1 10 2 10 Pulse forward current VF (V) 1.2 10mA 1mA 0.8 0.4 0 – 40 10 3 IFP (mA) 0 40 λP — Ta 120 10 2 10 – 25 0 20 Relative radiant intensity (%) 960 940 920 40 Ambient temperature IF = 20mA Ta = 25˚C 60˚ 60 100 90 80 70 60 50 40 30 20 0 40 2 80 Ta (˚C ) 120 120˚ 20 900 940 980 1020 1060 1100 Wavelength λ (nm) 60˚ 90˚ 40 0 860 100 30˚ 90˚ 20 30 Relative radiant 40 intensity (%) 50 60 70 80 90 150˚ 100 180˚ Ambient temperature 80 Ta (˚C ) 0˚ 80 150˚ 900 – 40 60 θ Direction light distribution characteristics 30˚ 980 1.6 IF = 20mA Ta (˚C ) Spectral characteristics 100 IF = 20mA λP (nm) 80 Ambient temperature 1000 1.2 VF (V) 10 3 IF = 50mA Forward voltage Relative radiant intensity ∆Ie (1) 0.8 ∆Ie — Ta VF — Ta 10 10 –2 0.4 Forward voltage 1.6 (1) tw = 10µs f = 100Hz (2) DC Ta = 25˚C 1 0 Duty cycle (%) ∆Ie — IFP 10 2 0 10 2 10 Relative radiant intensity ∆Ie 0 – 25 Peak emission wavelength ∆IF — VF∆ IFP — Duty cycle 10 2 60 120˚