VISHAY ILD5-X009

ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Optocoupler, Phototransistor Output (Dual, Quad Channel)
Features
•
•
•
•
Dual Channel
Current Transfer Ratio at IF = 10 mA
Isolation Test Voltage, 5300 VRMS
Lead-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A 1
8 E
C 2
7 C
C 3
6 C
A
5 E
4
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
• CSA 93751
• BSI IEC60950 IEC60065
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• FIMKO
Quad Channel
A 1
16 E
C
2
15 C
C
3
14 C
A
4
13 E
A
5
12 E
C
6
11 C
Description
C
7
10 C
The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon
NPN phototransistor. Signal information, including a
DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between
input and output. The ILD1/ 2/ 5/ ILQ1/ 2/ 5 are espe-
A
8
9 E
cially designed for driving medium-speed logic and
can be used to eliminate troublesome ground loop
and noise problems. Also these couplers can be used
to replace relays and transformers in many digital
interface applications such as CTR modulation.
The ILD1/ 2/ 5 has two isolated channels in a single
DIP package and the ILQ1/ 2/ 5 has four isolated
channels per package.
e3
i179012
Pb
Pb-free
Order Information
Part
Remarks
ILD1
CTR > 20 %, DIP-8
ILQ1
CTR > 20 %, DIP-16
ILD2
CTR > 100 %, DIP-8
ILQ2
CTR > 100 %, DIP-16
ILD5
CTR > 50 %, DIP-8
ILQ5
CTR > 50 %, DIP-16
ILD1-X007
CTR > 20 %, SMD-8 (option 7)
ILD1-X009
CTR > 20 %, SMD-8 (option 9)
ILD2-X006
CTR > 100 %, DIP-8 400 mil (option 6)
ILD2-X007
CTR > 100 %, SMD-8 (option 7)
ILD2-X009
CTR > 100 %, SMD-8 (option 9)
ILD5-X009
CTR > 50 %, SMD-8 (option 9)
ILQ1-X009
CTR > 20 %, SMD-16 (option 9)
ILQ2-X009
CTR > 100 %, SMD-16 (option 9)
For additional information on the available options refer to
Option Information.
Document Number 83646
Rev. 1.4, 05-Nov-04
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1
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Symbol
Value
Reverse voltage
Parameter
Test condition
VR
6.0
V
Forward current
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
1.3
mW/°C
Derate linearly from 25 °C
Unit
Output
Parameter
Test condition
Collector-emitter reverse voltage
Part
Symbol
Value
Unit
ILD1
VCER
50
V
ILQ1
VCER
50
V
ILD2
VCER
70
V
ILQ2
VCER
70
V
ILD5
VCER
70
V
ILQ5
VCER
70
V
IC
50
mA
IC
400
mA
Pdiss
200
mW
2.6
mW/°C
Collector current
t < 1.0 ms
Power dissipation
Derate linearly from 25 °C
Coupler
Parameter
Test condition
Symbol
Value
Unit
VISO
5300
VRMS
Creepage
≥ 7.0
mm
Clearance
≥ 7.0
mm
Isolation test voltage (between
emitter and detector referred to
standard climate 25 °C/ 50 %
RH, DIN 50014)
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
10
11
Ω
Ptot
250
mW
3.3
mW/°C
°C
Package power dissipation
Derate linearly from 25 °C
Storage temperature
Tstg
- 40 to + 150
Operating temperature
Tamb
- 40 to + 100
°C
Tj
100
°C
Tsld
260
°C
Junction temperature
Soldering temperature
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2
2.0 mm from case bottom
Document Number 83646
Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Typ.
Max
Forward voltage
Parameter
IF = 60 mA
Test condition
VF
1.25
1.65
V
Reverse current
VR = 6.0 V
IR
0.01
10
µA
Capacitance
VR = 0 V, f = 1.0 MHz
Thermal resistance, junction to
lead
Symbol
Min
Unit
CO
25
pF
TthJL
750
K/W
Output
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
5.0
50
nA
0.25
0.4
V
Collector-emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
CCE
6.8
Collector-emitter leakage
current
VVCE = 10 V
ICEO
Saturation voltage, collectoremitter
ICE = 1.0 mA, IB = 20 µA
VCESAT
pF
DC forward current gain
VCE = 10 V, IB = 20 µA
HFE
200
650
1800
DC forward current gain
saturated
VCE = 0.4 V, IB = 20 µA
HFEsat
120
400
600
Thermal resistance, junction to
lead
Rthjl
500
K/W
Coupler
Parameter
Capacitance (input-output)
Test condition
VIO = 0 V, f = 1.0 MHz
Symbol
Min
CIO
Typ.
Max
Unit
0.8
pF
Current Transfer Ratio
Parameter
Current Transfer Ratio
(collector-emitter saturated)
Current Transfer Ratio
(collector-emitter)
Document Number 83646
Rev. 1.4, 05-Nov-04
Test condition
IF = 10 mA, VCE = 0.4 V
IF = 10 mA, VCE = 10 V
Part
Symbol
ILD1
ILQ1
CTRCEsat
Min
Typ.
75
Max
Unit
%
ILD2
ILQ2
CTRCEsat
170
%
ILD5
ILQ5
CTRCEsat
100
%
ILD1
ILQ1
CTRCE
20
80
300
%
ILD2
ILQ2
CTRCE
100
200
500
%
ILD5
ILQ5
CTRCE
50
130
400
%
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3
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Typical Switching Times
Non-saturated Switching Timing
Parameter
Current
Delay
Symbol
IF
tD
Rise time
Storage
Fall time
Propagation
H-L
Propagation
L-H
tPHL
tPLH
VCE = 5.0 V, RL = 75 Ω, 50 % of VPP
Test condition
tr
tS
tf
Unit
mA
µs
µs
µs
µs
µs
µs
ILD1
ILQ1
20
0.8
1.9
0.2
1.4
0.7
1.4
ILD2
ILQ2
5.0
1.7
2.6
0.4
2.2
1.2
2.3
ILD5
ILQ5
10
1.7
2.6
0.4
2.2
1.1
2.5
Rise time
Storage
Fall time
Propagation
H-L
Propagation
L-H
tPHL
tPLH
Saturated Switching Timing
Parameter
Current
Delay
Symbol
IF
tD
Test condition
VCE = 0.4 V, RL = 1.0 kΩ, VCC = 5.0 V, VTH = 1.5 V
tr
tS
tf
Unit
mA
µs
µs
µs
µs
µs
µs
ILD1
ILQ1
20
0.8
1.2
7.4
7.6
1.6
8.6
ILD2
ILQ2
5.0
1.0
2.0
5.4
13.5
5.4
7.4
ILD5
ILQ5
10
1.7
7.0
4.6
20
2.6
7.2
Common Mode Transient Immunity
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Common mode rejection,
output high
VCM = 50 VP-P, RL = 1.0 kΩ,
IF = 0 mA
CMH
5000
V/µs
Common mode rejection,
output low
VCM = 50 VP-P, RL = 1.0 kΩ,
IF = 10 mA
CML
5000
V/µs
CCM
0.01
pF
Common mode coupling
capacitance
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4
Document Number 83646
Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
IF
VCC=5 V
IF=10 mA
VO
R L=75 Ω
F=10 KHz,
DF=50%
VO
tD
tR
tPLH
VTH=1.5 V
tF
tS
tPHL
iild1_01
iild1_04
Figure 1. Non-saturated Switching Schematic
Figure 4. Saturated Switching Timing
1.4
t PHL
VO
tPLH
tS
50%
V F - Forward Voltage - V
IF
1.3
TA = -55°C
1.2
TA = 25°C
1.1
1.0
0.9
TA = 100°C
0.8
0.7
.1
iild1_02
tD
tF
tR
1
10
I F - Forward Current - mA
100
iild1_05
F=10 KHz,
DF=50%
VCC=5 V
RL
IF=10 mA
VO
Figure 5. Normalized Non-Saturated and Saturated CTR vs. LED
Current
CTRNF - Normalized CTR Factor
Figure 2. Non-saturated Switching Timing
iild1_03
1.5
Normalized to:
VCE = 10 V, IF = 10 mA
TA= 25°C
CTRce(sat) VCE = 0.4 V
1.0
NCTR
0.5
NCTR(SAT)
0.0
.1
1
10
100
I F - LED Current - mA
iild1_06
Figure 3. Saturated Switching Schematic
Document Number 83646
Rev. 1.4, 05-Nov-04
Figure 6. Normalized Non-Saturated and Saturated CTR vs. LED
Current
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5
ILD1/ 2/ 5 / ILQ1/ 2/ 5
1.5
35
Normalized to:
VCE = 10 V, IF = 10 mA, TA= 25°C
ˇ
CTRce(sat) VCE = 0.4 V
1.0
ICE - Collector Current - mA
TA= 50°C
NCTR
0.5
NCTR(SAT)
30
25
50°C
20
15
5
0
.1
1
10
100
0
10
I F - LED Current - mA
iild1_07
20
40
30
50
60
IF - LED Current - mA
iild1_10
Figure 7. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 10. Collector-Emitter Current vs. Temperature and LED
Current
1.5
10 5
ICEO - Collector-Emitter - nA
CTR - Normalized CTR Factor
85°C
10
0.0
Normalized to:
VCE = 10 V, IF = 10 mA
TA= 25°C
1.0
CTRce(sat) VCE = 0.4 V
TA= 70°C
NCTR
0.5
NCTR(SAT)
.1
1
10
10 4
10 3
10 2
Vce = 10 V
10 1
Typical
10 0
10 -1
10 -2
-20
0.0
100
0
20
40
60
80
100
TA - Ambient Temperature - °C
I F - LED Current - mA
iild1_08
iild1_11
Figure 8. Normalized Non-Saturated and Saturated CTR vs. LED
Current
Figure 11. Collector-Emitter Leakage Current vs.Temp.
1000
1.5
Normalized to:
V CE = 10 V, I F = 10 mA, TA = 25°C
CTRce(sat) VCE = 0.4 V
1.0
tpLH - Propagation Low-High µs
NCTR - Normalized CTR
70°C
25°C
TA = 85°C
NCTR
0.5
NCTR(SAT)
0.0
.1
1
10
IF - LED Current - mA
2.5
Ta = 25°C, IF = 10 mA
Vcc = 5 V, Vth = 1.5 V
tpHL
100
2.0
10
1.5
tpLH
1
100
tpHL - Propagation High-Low µs
CTRNF - Normalized CTR Factor
Vishay Semiconductors
1.0
.1
1
10
100
RL - Collector Load Resistor - kΩ
iild1_09
Figure 9. Normalized Non-Saturated and Saturated CTR vs. LED
Current
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6
iild1_12
Figure 12. Propagation Delay vs. Collector Load Resistor
Document Number 83646
Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
4
3
2
1
5
6
7
8
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
4° typ.
.300 (7.62)
typ.
.031 (0.79)
.130 (3.30)
.150 (3.81)
.050 (1.27)
.230(5.84)
.110 (2.79) .250(6.35)
.130 (3.30)
10°
.020 (.51 )
.035 (.89 )
.100 (2.54) typ.
.018 (.46)
.022 (.56)
3°–9°
.008 (.20)
.012 (.30)
i178006
Package Dimensions in Inches (mm)
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10
11 12 13
14
15
16
ISO Method A
.779 (19.77 )
.790 (20.07)
.030 (.76)
.045 (1.14)
.300 (7.62)
typ.
.031(.79)
.130 (3.30)
.150 (3.81)
4°
.018 (.46)
.022 (.56)
.020(.51)
.035 (.89)
.100 (2.54)typ.
.050 (1.27)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
.110 (2.79)
.130 (3.30) .230 (5.84)
.250 (6.35)
i178007
Document Number 83646
Rev. 1.4, 05-Nov-04
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7
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Option 6
Option 7
.407 (10.36)
.391 (9.96)
.307 (7.8)
.291 (7.4)
.300 (7.62)
TYP.
Option 9
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1) .0040 (.102)
.0098 (.249)
.315 (8.0)
MIN.
.014 (0.35)
.010 (0.25)
.400 (10.16)
.430 (10.92)
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8
.331 (8.4)
MIN.
.406 (10.3)
MAX.
.012 (.30) typ.
.020 (.51)
.040 (1.02)
.315 (8.00)
min.
15° max.
18450
Document Number 83646
Rev. 1.4, 05-Nov-04
ILD1/ 2/ 5 / ILQ1/ 2/ 5
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83646
Rev. 1.4, 05-Nov-04
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9