Si1303DL Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.430 @ VGS = - 4.5 V - 0.72 0.480 @ VGS = - 3.6 V - 0.68 0.700 @ VGS = - 2.5 V - 0.56 SOT-323 SC-70 (3-LEADS) G 1 3 LA D XX YY Marking Code Lot Traceability and Date Code S 2 Part # Code Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 secs Steady State Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS "12 Continuous Drain Current (TJ = 150_C)a TA = 25_C V - 0.67 - 0.72 ID TA = 70_C Pulsed Drain Current - 0.58 IDM Continuous Diode Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 70_C Operating Junction and Storage Temperature Range PD - 0.54 A - 2.5 - 0.28 - 0.24 0.34 0.29 0.22 0.19 TJ, Tstg W _C - 55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 5 sec M i Maximum JJunction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 315 375 360 430 285 340 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71075 S-03721—Rev. C, 07-Apr-03 www.vishay.com 1 Si1303DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = - 250 mA - 0.6 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea "100 VDS = - 20 V, VGS = 0 V -1 VDS = - 20 V, VGS = 0 V, TJ = 70_C -5 VDS = - 5 V, VGS = - 4.5 V nA mA - 2.5 A VGS = - 4.5 V, ID = - 1 A 0.360 0.430 VGS = - 3.6 V, ID = - 0.7 A 0.400 0.480 VGS = - 2.5 V, ID = - 0.3 A 0.560 0.700 gfs VDS = - 10 V, ID = - 1 A 1.7 VSD IS = - 0.3 A, VGS = 0 V Forward Transconductancea Diode Forward VDS = 0 V, VGS = "12 V rDS(on) Voltagea V W S - 1.2 V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) 9 15 tr 31 45 12.5 20 14 20 35 55 Rise Time Turn-Off Delay Time 1.7 VDS = - 10 V, VGS = - 4.5 V, ID = - 1 A tf Source-Drain Reverse Recovery Time trr 0.38 nC 0.63 VDD = - 10 V, RL = 10 W ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W td(off) Fall Time 2.2 IF = - 1 A, di/dt = 100 A/ms ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 6 6 VGS = 4.5 V 4V 25_C 3.5 V 4 3V 3 2.5 V 2 TC = - 55_C 5 I D - Drain Current (A) I D - Drain Current (A) 5 2V 1 4 3 125_C 2 1 1, 1.5 V 0 0 2 4 6 VDS - Drain-to-Source Voltage (V) www.vishay.com 2 8 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 71075 S-03721—Rev. C, 07-Apr-03 Si1303DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance 250 1.6 200 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) On-Resistance vs. Drain Current 2.0 VGS = 2.5 V 1.2 0.8 Ciss 150 100 VGS = 3.6 V Coss 0.4 50 VGS = 4.5 V Crss 0.0 0 0 1 2 3 4 5 6 0 4 ID - Drain Current (A) Gate Charge 16 20 On-Resistance vs. Junction Temperature 1.6 VDS = 10 V ID = 1 A r DS(on) - On-Resistance (W) (Normalized) V GS - Gate-to-Source Voltage (V) 12 VDS - Drain-to-Source Voltage (V) 12 9 6 3 0 0 1 2 3 VGS = 4.5 V ID = 1 A 1.2 0.8 0.4 0.0 - 50 4 - 25 Qg - Total Gate Charge (nC) Source-Drain Diode Forward Voltage 25 50 75 100 125 150 On-Resistance vs. Gate-to-Source Voltage 2.5 r DS(on) - On-Resistance ( W ) TJ = 150_C 1 0.1 TJ = 25_C 0.01 0.001 0.0 0 TJ - Junction Temperature (_C) 10 I S - Source Current (A) 8 2.0 ID = 1 A 1.5 1.0 0.5 0.0 0.3 0.6 0.9 1.2 VSD - Source-to-Drain Voltage (V) Document Number: 71075 S-03721—Rev. C, 07-Apr-03 1.5 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) www.vishay.com 3 Si1303DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power 0.4 20 16 ID = 250 mA 0.2 Power (W) V GS(th) Variance (V) 0.3 0.1 12 TA = 25_C 8 0.0 4 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 10 -3 10 -2 10 -1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 360_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10 -4 10 -3 10 -2 10 -1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 www.vishay.com 4 10 -3 10 -2 10 -1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71075 S-03721—Rev. C, 07-Apr-03