PD - 9.1360
IRL2703S
PRELIMINARY
HEXFET® Power MOSFET
l
l
l
l
l
l
Logic-Level Gate Drive
Advanced Process Technology
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
D
VDSS = 30V
RDS(on) = 0.04Ω
G
ID = 24A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The D2PAK is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible onresistance in any existing surface mount package. The
D2PAK is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
D 2 Pak
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Parameter
Max.
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
24
17
96
45
0.30
±16
77
14
4.5
3.5
-55 to + 175
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case)
Thermal Resistance
Parameter
RθJC
RθJA
Junction-to-Case
Junction-to-Ambient (PCB Mount,steady-state)**
Min.
Typ.
Max.
Units
––––
––––
––––
––––
3.3
40
°C/W
11/18/96
IRL2703S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
30
–––
–––
–––
1.0
6.4
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
IDSS
Drain-to-Source Leakage Current
LS
Internal Source Inductance
–––
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
V(BR)DSS
I GSS
Typ.
–––
0.030
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
8.5
140
12
20
Max. Units
Conditions
–––
V
VGS = 0V, I D = 250µA
––– V/°C Reference to 25°C, I D = 1mA
0.040
VGS = 10V, ID = 14A
Ω
0.060
VGS = 4.5V, I D = 12A
–––
V
VDS = VGS , ID = 250µA
–––
S
VDS = 25V, I D = 14A
25
VDS = 30V, VGS = 0V
µA
250
VDS = 24V, VGS = 0V, TJ = 150°C
100
V GS = 16V
nA
-100
VGS = -16V
15
ID = 14A
4.6
nC VDS = 24V
9.3
V GS = 4.5V, See Fig. 6 and 13
–––
VDD = 15V
–––
I D = 14A
ns
–––
RG = 12Ω, VGS = 4.5V
–––
RD = 1.0Ω, See Fig. 10
Between lead,
nH
7.5
–––
and center of die contact
450 –––
VGS = 0V
210 –––
pF
VDS = 25V
110 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD
t rr
Q rr
t on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
MOSFET symbol
––– ––– 24
showing the
A
G
integral reverse
––– –––
96
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 14A, VGS = 0V
––– 65
97
ns
TJ = 25°C, IF = 14A
––– 140 210
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 14A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. ( See fig. 11 )
TJ ≤ 175°C
VDD = 15V, starting TJ = 25°C, L = 570µH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Uses IRL2703 data and test conditions.
RG = 25Ω, IAS = 14A. (See Figure 12)
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
D
S
IRL2703S
1000
1000
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTT OM 2.5V
100
10
1
2.5V
20 µ s PU LSE W ID TH
T J = 2 5°C
0.1
0.1
1
10
100
10
0.1
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
(N o rm a li ze d )
I D , D r ain- to-S ourc e C urre nt (A )
T J = 2 5 °C
T J = 1 7 5 °C
10
1
V DS = 1 5 V
2 0 µ s P U L S E W ID T H
5
6
7
8
9
V G S , Ga te-to-S o urce V oltage (V )
Fig 3. Typical Transfer Characteristics
10
A
100
Fig 2. Typical Output Characteristics
2.0
4
1
V D S , Drain-to-S ource Voltage (V )
100
3
2 0µ s PU L SE W ID TH
T J = 1 75 °C
0.1
A
100
Fig 1. Typical Output Characteristics
0.1
2.5V
1
V D S , Drain-to-Source V oltage (V )
2
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
ID , D ra in -to -S o u rce C u rre n t (A )
ID , D ra in -to -S o u rc e C u rre n t (A )
TOP
10
A
I D = 24 A
1.5
1.0
0.5
V G S = 10 V
0.0
-60 -40 -20
0
20
40
60
80
A
100 120 140 160 180
T J , Junction T emperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
IRL2703S
V GS
C is s
C rss
C oss
C , C a p a c ita n c e (p F )
800
15
= 0 V,
f = 1M H z
= C gs + C gd , Cds SH OR TE D
= C gd
= C d s + C gd
V G S , G a te -to -S o u rce V o lta g e (V )
1000
C i ss
600
C o ss
400
C rs s
200
0
10
V DS = 2 4V
V DS = 1 5V
12
9
6
3
FO R TEST CIR CU IT
SEE FIG UR E 13
0
A
1
I D = 14A
0
100
V D S , D rain-to-S ource Voltage (V )
8
12
16
A
20
Q G , T otal Gate C harge (nC )
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
1000
OPE R ATIO N IN TH IS A RE A LIMITE D
BY R D S(o n)
I D , D ra in C u rre n t (A )
I S D , R e v e rse D ra in C u rre n t (A )
4
TJ = 1 75 °C
T J = 25° C
10
100
10µ s
10 0µs
10
1 ms
VG S = 0 V
1
0.4
0.8
1.2
1.6
2.0
V S D , S ource-to-Drain Voltage (V )
Fig 7. Typical Source-Drain Diode
Forward Voltage
A
2.4
T C = 25 °C
T J = 17 5°C
S ing le Pulse
1
1
1 0m s
A
10
V D S , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
100
IRL2703S
24
RD
VDS
I D , D ra in C u rre n t (A m p s)
20
VGS
D.U.T.
RG
+
-VDD
16
5.0V
12
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
8
Fig 10a. Switching Time Test Circuit
VDS
4
90%
A
0
25
50
75
100
125
150
175
TC , Case Temperature (°C )
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Therm al Response (Z th JC )
10
D = 0 .5 0
1
0.2 0
0 .1 0
0.05
0.1
PD M
0.02
0.0 1
t
S ING L E P UL S E
( THE R M A L R E S P O N S E )
1
t2
N o tes :
1 . D u ty fa c to r D = t 1 / t 2
0.01
0.00001
2 . P e a k TJ = P D M x Z th J C + T C
0.0001
0.001
0.01
0.1
t 1 , R e cta n g u la r P u ls e D u r a tio n ( se c )
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
A
1
IRL2703S
D.U.T.
RG
+
V
- DD
IAS
5.0 V
tp
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
160
L
VDS
TO P
B OTTO M
ID
5.7 A
9 .9A
14A
120
80
40
V D D = 1 5V
0
25
50
A
75
100
125
150
Starting TJ , Junction T emperature (°C)
tp
VDD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
VDS
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
4.5 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
175
IRL2703S
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
•
•
•
•
RG
Driver Gate Drive
Period
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
D=
-
VDD
P.W.
Period
VGS=10V
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
ISD
*
IRL2703S
Package Outline
D2Pak Outline
Dimensions are shown in millimeters (inches)
1 0 .5 4 (.4 15 )
1 0 .2 9 (.4 05 )
1 .4 0 (.0 5 5)
M A X.
4.6 9 (.1 85 )
4.2 0 (.1 65 )
-A -
-B -
4
1 .3 2 (.0 5 2)
1 .2 2 (.0 4 8)
1 0 .1 6 (.40 0 )
R E F.
4
1 .7 8 (.0 7 0)
1 .2 7 (.0 5 0)
1
2
1 5 .4 9 (.61 0 )
1 4 .7 3 (.58 0 )
3
5 .2 8 (.2 0 8)
4 .7 8 (.1 8 8)
3X
1.4 0 (.0 55 )
1.1 4 (.0 45 )
2X
5 .0 8 ( .20 0)
0.5 5 (.0 22 )
0.4 6 (.0 18 )
0 .93 (.03 7 )
0 .69 (.02 7 )
0 .2 5 ( .0 1 0)
6.4 7 (.2 55 )
6.1 8 (.2 43 )
2.7 9 ( .1 10 )
2.2 9 ( .0 90 )
M
2.6 1 (.1 0 3)
2.3 2 (.0 9 1)
1.39 (.0 55 )
1.14 (.0 45 )
8 .8 9 (.35 0 )
R E F.
A M B
N O TES:
1 DIMEN SIO NS AFTER SO LD ER D IP.
2 DIMEN SIO NIN G & TO LERAN CIN G PER ANSI Y14.5M, 1982
3 CO N TRO LLIN G D IMENSION : IN CH .
4 DIMEN SIO NS AR E SH OW N IN MILLIMETER S (IN CH ES).
5 HEATSIN K & LEAD D IMEN SIO N S D O NO T IN CLU D E BU R RS.
A
Part Marking Information
D2Pak
E XAM PL E : THIS IS A N IR F5 30 S
W ITH AS SE MB LY
L OT C OD E 9B 1M
IN TER NA TIO NA L
R EC TIF IER
LO G O
A SS EMB LY
LOT C OD E
A
PAR T N UM BE R
F 53 0S
92 46
9B
1M
D ATE C OD E
(YYW W )
Y Y = YE AR
W W = W E EK
IRL2703S
Tape & Reel Information
D2Pak
Dimensions are shown in millimeters (inches)
TRR
1.6 0 (.063 )
1.5 0 (.059 )
4.10 ( .1 61)
3.90 ( .1 53)
F E E D D I R E C T IO N
1.85 (.0 73)
1.65 (.0 65)
1 . 6 0 (. 06 3 )
1 . 5 0 (. 05 9 )
1 1 .6 0 (.4 5 7 )
1 1 .4 0 (.4 4 9 )
0 .3 6 8 (.0 1 4 5 )
0 .3 4 2 (.0 1 3 5 )
1 5 .4 2 (.6 0 9 )
1 5 .2 2 (.6 0 1 )
2 4 . 3 0 (. 9 5 7 )
2 3 . 9 0 (. 9 4 1 )
TR L
1 0 . 9 0 (. 4 2 9 )
1 0 . 7 0 (. 4 2 1 )
1 . 7 5 (. 0 6 9 )
1 . 2 5 (. 0 4 9 )
4 .7 2 (.1 3 6 )
4 .5 2 (.1 7 8 )
1 6 .1 0 ( .6 3 4 )
1 5 .9 0 ( .6 2 6 )
F E E D D I R E C T IO N
1 3 .5 0 (. 5 32 )
1 2 .8 0 (. 5 04 )
2 7 .4 0 (1 .0 7 9)
2 3 .9 0 (.9 4 1 )
4
330.00
(14.173)
M AX.
NOTES :
1. C O M F O R M S T O E IA - 41 8 .
2. C O N T R O LL IN G D IM E N S I O N : M IL L IM E T E R .
3. D IM E N S IO N M E A S U R E D @ H U B .
4. IN C L U D E S F LA N G E D I S T O R T IO N @ O U T E R E D G E .
6 0. 00 (2 .3 6 2)
M IN .
26.40 (1.039)
24.40 (.961)
3 0. 4 0 (1 .1 9 7)
MAX .
4
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/
Data and specifications subject to change without notice.
11/96