Data Sheet No.PD 60151-J IPS031G/IPS032G SINGLE/DUAL FULLY PROTECTED POWER MOSFET SWITCH Features • • • • • Product Summary Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Description Rds(on) 70mΩ (max) V clamp 50V Ishutdown 12A Ton/Toff The IPS031G/IPS032G are fully protected single/dual low side SMART POWER MOSFETs that feature overcurrent, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET ® POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning off the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 12A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. 1.5µs Packages 16-Lead SOIC IPS032G (Dual) 8-Lead SOIC IPS031G Typical Connection Load R in series (if needed) D IN Q control S S Logic signal (Refer to lead assignment for correct pin assignment) www.irf.com 1 IPS031G/IPS032G 31 Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 µm copper thickness. All Sources leads of each mosfet must be connected together to get full current capability Symbol Parameter Min. Max. — 47 Maximum input voltage -0.3 7 V Maximum IN current Diode max. continuous current (1) -10 +10 mA (rth=125oC/W) IPS031G — 1.4 rth=85oC/W) IPS032G — 2 Isd pulsed Diode max. pulsed current (1) (for ea. mosfet) Pd Maximum power dissipation(1) (rth=125oC/W) IPS031G — 15 — 1 (for all Pd mosfets, rth=85oC/W) IPS032G — 1.5 Vds Maximum drain to source voltage Vin Iin, max Isd cont. (for all sd mosfets, Units Test Conditions A W ESD1 Electrostatic discharge voltage (Human Body) — 4 ESD2 Electrostatic discharge voltage (Machine Model) — 0.5 T stor. Tj max. Max. storage temperature -55 150 Max. junction temperature -40 150 Min. Typ. — 100 — — 65 — — 85 — — 100 — — 60 — C=100pF, R=1500Ω, kV C=200pF, R=0Ω, L=10µH o C Thermal Chacteristics Symbol Parameter Rth1 Thermal resistance Rth2 Thermal resistance Rth1 Thermal resistance (2 mos on) (2 mosfets on) Rth2 Thermal resistance (1 mos on) (1 mosfet on) Rth3 Thermal resistance (2 mos on) (2 mosfets on) with standard footprint with 1" square footprint with standard footprint Max. Units Test Conditions with standard footprint SOIC-8 o C/W SOIC-16 with 1" square footprint (1) Limited by junction temperature (pulsed current limited also by internal wiring) 2 www.irf.com IPS031G/IPS032G Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Min. Max. Vds (max) VIH VIL Ids — 4 0 35 6 0.5 — — 0.2 — 0 2.2 1.65 5 1 1 Continuous Drain to Source voltage High level input voltage Low level input voltage Continuous drain current Tamb=85 oC (TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) IPS031G (TAmbient = 85oC, IN = 5V, rth = 85oC/W, Tj = 125oC) IPS032G Rin Recommended resistor in series with IN pin Tr-in(max) Max recommended rise time for IN signal (see fig. 2) Fr-I sc (2) Max. frequency in short circuit condition (Vcc = 14V) Units V A kΩ µS kHz Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter Rds(on) Rds(on) Idss Min. Typ. ON state resistance Tj = 25oC ON state resistance Tj = 150 oC Drain to source leakage current 20 — 0 45 75 0.5 Max. Units Test Conditions 60 100 25 Drain to source leakage current 0 5 50 Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current 47 50 7 1 25 50 52 53 8.1 1.6 90 130 56 60 9.5 2 200 250 @Tj=25oC Idss2 mΩ Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC µA Vcc = 40V, Tj = 25oC @Tj=25oC V clamp 1 V clamp 2 Vin clamp Vth Iin, -on Iin, -off V µA Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5Ω (IPS031), Resistive Load = 3Ω (IPS031S), Rinput = 50Ω, 100µs pulse,Tj = 25oC, (unless otherwise specified). Symbol Parameter Min. Ton Tr Trf T off Tf Qin 0.05 0.4 — 0.8 0.5 — Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge www.irf.com Typ. Max. Units Test Conditions 0.3 1 8 2 1.5 1.1 0.6 2 — 3.5 2.5 — See figure 2 µs See figure 2 nC Vin = 5V 3 IPS031G/IPS032G Protection Characteristics Symbol Parameter T sd I sd V reset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) Min. Typ. — 10 1.5 2 — 165 14 2.3 10 400 Max. Units Test Conditions — 18 3 40 — o C A V µs µJ See fig. 1 See fig. 1 Vin = 0V, Tj = 25oC Vcc = 14V Functional Block Diagram All values are typical DRAIN 47 V 300 Ω IN 8.1 V S Q R Q 200 kΩ I sense 80 µA T > 165°c I > 1sd SOURCE Lead Assignments D D D D D1 D1 D1 D1 D2 D2 D2 D2 1 1 S S S S1 S1 S1 I1 S2 S2 S2 I2 In 8 Lead SOIC 16 Lead SOIC (Dual) IPS032G IPS031G Part Number 4 www.irf.com IPS031G/IPS032G Vin 5V 90 % 0V Vin 10 % Ids t < T reset Tr-in t > T reset I shutdown Isd 90 % Ids 10 % Td on Td off tf tr T T shutdown Tsd (165 °c) Vds Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin L Rem : V load is negative during demagnetization V load + R 14 V - Ids Vin Vds clamp ( Vcc ) Vds 5v 0v D IN Vds S Ids ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms www.irf.com Figure 4 - Active clamp test circuit 5 IPS031G/IPS032G All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 100 200% 90 180% 80 160% 70 140% o Tj = 150 C 60 120% 50 100% Tj = 25oC 40 80% 30 60% 20 40% 10 20% 0 0 1 2 3 4 5 6 7 8 Figure 5 - Rds ON (mΩ) Vs Input Voltage (V) 0% -50 -25 10 9 9 8 8 50 75 100 125 150 175 toff delay fall tim e 7 ton delay rise tim e 130% final rdson 6 5 4 6 5 4 3 3 2 2 1 1 0 0 0 1 2 3 4 5 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) 6 25 Figure 6 - Normalised Rds ON (%) Vs Tj (oC) 10 7 0 0 1 2 3 4 5 6 7 8 Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) www.irf.com IPS031G/IPS032G 100 100 delay off fall tim e delay on rise tim e 130% rdson 10 10 1 1 0 .1 0 .1 10 10 100 1000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) Vs IN Resistor (Ω) 20 18 18 16 16 14 14 12 12 10 10 8 8 6 6 4 Isd 25°C 4 2 Ilim 25°C 2 0 1 2 3 4 5 6 7 8 Figure 11 - Current Iimimitation & I shutdown (A) Vs Vin (V) www.irf.com 1000 10000 Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor (Ω) 20 0 100 10000 0 -50 -25 0 25 50 75 100 125 150 Figure 12 - I shutdown (A) Vs Temperature (oC) 7 IPS031G/IPS032G 10 10 rth = 50°C/W SO8 Std. footprint 100°C/W 8 6 4 4 2 2 0 50 100 150 200 SO8 Std. footprint 2 m osfets on 8 6 0 -50 SO16 Std. footprint 1 m osfet on 0 -50 Figure 13a - Max.Cont. Ids (A) Vs Amb. Temperature (oC) - IPS031G 0 T = 100 °C 100 150 200 Figure 13b - Max.Cont. Ids (A) Vs Amb. Temperature (oC) - IPS032G 100 T = 25°C 50 100 single pulse 100 Hz rth=100°C/W dT=25°C 1kHz rth=100°C/W dT=25°C 10 10 1 1 Vbat = 14 V Tjini = T sd 0.1 0 .0 1 Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS031G/IPS032G 8 0 .1 1 10 100 Figure 15 - Iclamp (A) Vs Inductive Load (mH) www.irf.com IPS031G/IPS032G 100 1 00 rth SO8 std footprint 10 10 1 1 Single pulse Single pulse 0 .1 0 .1 0 .0 1 0 .0 1 Figure 16a - Transient Thermal Imped. (oC/W) Vs Time (s) - IPS031G rth SO16 std footprint 1 mosfet active rth SO16 std footprint 2 mosfets active Figure 16b - Transient Thermal Imped. (oC/W) Vs Time (s) - IPS032G 200 120% 180 115% 160 110% 140 120 105% 100 100% 80 95% 60 Iin,on 40 20 Iin,off 0 -50 -25 0 25 50 75 100 125 150 Figure 17 - Input current (µA) Vs Tj (oC) www.irf.com 90% Vds clam p @ Isd 85% Vin clam p @ 10m A 80% -50 -25 0 25 50 75 100 125 150 Figure 18 - Vin clamp and V clamp2 (%) Vs Tj (oC) 9 IPS031G/IPS032G 16 14 Treset rise tim e 12 fall tim e 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and Treset KI Vs Tj (oC) Case Outlines D DIM B 5 A F OOT PRINT 6 8 7 6 5 H E 0.25 [.010] 1 2 3 A 4 6.46 [.255] MIN .0532 .0688 1.35 1.75 A1 .0040 3X 1.27 [.050] 8X 1.78 [.070] MAX .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 BAS IC 1.27 BAS IC .025 BAS IC 0.635 BAS IC e1 6X e MILLIMETERS MAX A 8X 0.72 [.028] INCHES MIN H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° e1 A C y 0.10 [.004] 8X b 0.25 [.010] A1 8X L 7 C A B NOT ES: 1. DIMENS IONING & T OLERANCING PE R ASME Y14.5M-1994. 5 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.15 [.006]. 2. CONT ROLLING DIMENSION: MILLIMET ER 6 DIMENSION DOES NOT INCLUDE MOLD PROT RUS IONS. MOLD PROTRUSIONS NOT T O E XCEED 0.25 [.010]. 3. DIMENS IONS ARE SHOWN IN MILLIME TE RS [INCHES]. 4. OUT LINE CONF ORMS T O JEDEC OUTLINE MS-012AA. 8-Lead SOIC 10 8X c 7 DIMENSION IS T HE LE NGTH OF LEAD FOR SOLDE RING TO A SUBS TRAT E. 01-6027 01-0021 11 (MS-012AA) www.irf.com IPS031G/IPS032G 16 -Lead SOIC (narrow body) 01-6018 01-3064 00 (MS-012AC) IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 Data and specifications subject to change without notice. 6/11/2001 www.irf.com 11