SS1H9 and SS1H10 Vishay Semiconductors New Product formerly General Semiconductor High Voltage Surface Mount Schottky Rectifier DO-214AC (SMA) Reverse Voltage 90 to 100V Forward Current 1.0A Cathode Band 0.065 (1.65) 0.110 (2.79) 0.100 (2.54) 0.049 (1.25) Mounting Pad Layout 0.066 MIN. (1.68 MIN.) 0.177 (4.50) 0.157 (3.99) Dimensions in inches and (millimeters) 0.074 MAX. (1.88 MAX.) 0.012 (0.305) 0.006 (0.152) 0.090 (2.29) 0.060 MIN. (1.52 MIN.) 0.078 (1.98) 0.208 (5.28) REF 0.060 (1.52) 0.008 (0.203) MAX. 0.030 (0.76) 0.208 (5.28) 0.194 (4.93) Mechanical Data Features Case: JEDEC DO-214AC molded plastic body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 High temperature soldering guaranteed: 250°C/10 seconds at terminals Polarity: Color band denotes cathode end Weight: 0.002oz., 0.064g • Plastic package has Underwriters Laboratory Flammability Classification 94V-0 • Low profile surface mount package • Built-in strain relief • Low power loss, high efficiency • For use in low voltage high frequency inverters, free wheeling, and polarity protection applications • Guardring for overvoltage protection Maximum Ratings and Thermal Characteristics (T = 25°C unless otherwise noted) Parameter SS1H9 SS1H10 A Symbol Device marking code Unit S9 S10 Maximum repetitive peak reverse voltage VRRM 90 100 V Maximum RMS voltage VRMS 63 70 V Maximum DC blocking voltage VDC 90 100 V Maximum average forward rectified current (see Fig. 1) IF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 50 A Peak repetitive reverse surge current at tp = 2.0µs, 1KHZ IRRM 1.0 A Maximum thermal resistance(2) RθJA RθJL 88 30 °C/W Storage temperature range TSTG –55 to +175 °C TJ 175 °C V µA mA Maximum operating temperature Electrical Characteristics Maximum instantaneous forward voltage at: (1) Maximum DC reverse current at rated DC blocking voltage(1) IF = IF = IF = IF = 1.0A, 1.0A, 2.0A, 2.0A, (TA = 25°C unless otherwise noted) TJ = TJ = TJ = TJ = 25°C 125°C 25°C 125°C VF 0.77 0.62 0.86 0.70 TJ = 25°C TJ = 125°C IR 1.0 0.5 Notes: (1) Pulse test: 300µs pulse width, 1% duty cycle (2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas Document Number 88747 16-Aug-04 www.vishay.com 1 SS1H9 and SS1H10 Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25°C unless otherwise noted) Fig. 2 – Maximum Non-Repetitive Peak Forward Surge Current Fig. 1 – Forward Current Derating Curve 60 Peak Forward Surge Current (A) 1.2 1 0.8 0.6 0.4 0.2 0 40 20 0 25 50 75 100 125 150 175 200 100 10 1 CaseTemperature (°C) Number of Cycles at 60 HZ Fig. 3 – Typical Instantaneous Forward Characteristics Fig. 4 – Typical Reverse Characteristics 100 Instantaneous Reverse Current (µA) 10000 TJ = 175°C 10 TJ = 12°C TJ = 150°C 1 TJ = 100°C 0.1 TJ = 25°C 0.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1000 TJ = 150°C 100 TJ = 125°C TJ = 100°C 10 1 0.1 0.01 TJ = 25°C 0.001 20 1.2 Instantaneous Forward Voltage (V) Fig. 5 – Typical Junction Capacitance 80 100 Fig. 6 – Typical Transient Thermal 100 Transient Thermal Impedance (°C/W) 1000 100 1 10 Reverse Voltage (V) www.vishay.com 2 60 Percent of Rated Peak Reverse Voltage (%) 10000 10 0.1 40 100 10 1 0.1 0.01 0.1 1 10 t, Pulse Duration (sec.) Document Number 88747 16-Aug-04