Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 1400–1600 MHz. 90 W, 1.5 GHz RF POWER TRANSISTOR NPN SILICON • Specified 26 Volts, 1490 MHz, Class AB Characteristics Output Power — 90 Watts (PEP) Gain — 7.5 dB Min @ 90 Watts (PEP) Collector Efficiency — 30% Min @ 90 Watts (PEP) Intermodulation Distortion — –28 dBc Max @ 90 Watts (PEP) • Third Order Intercept Point — 56.5 dBm Typ @ 1490 MHz, VCE = 24 Vdc, IC = 5 Adc • Characterized with Series Equivalent Large–Signal Parameters from 1400–1600 MHz • Characterized with Small–Signal S–Parameters from 1000–2000 MHz • Silicon Nitride Passivated • 100% Tested for Load Mismatch Stress at All Phase Angles with 3:1 Load VSWR @ 28 Vdc, and Rated Output Power • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 375A–01, STYLE 1 MAXIMUM RATINGS Rating Symbol Value Unit VCEO 25 Vdc Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4 Vdc Collector–Current — Continuous @ TJ(max) = 150°C IC 15 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 250 1.43 Watts W/°C Storage Temperature Range Tstg – 65 to +150 °C Symbol Max Unit RθJC 0.70 °C/W Collector–Emitter Voltage THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = 50 mAdc, IB = 0) V(BR)CEO 25 28 — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, VBE = 0) V(BR)CES 60 65 — Vdc Collector–Emitter Breakdown Voltage (IC = 50 mAdc, RBE = 100 Ω) V(BR)CER 30 — — Vdc Characteristic OFF CHARACTERISTICS (continued) This document contains information on a new product. Specifications and information herein are subject to change without notice. RF DEVICE DATA MOTOROLA Motorola, Inc. 1994 MRF15090 1 ELECTRICAL CHARACTERISTICS — continued (TC = 25°C unless otherwise noted.) Symbol Min Typ Max Unit V(BR)EBO 4 4.8 — Vdc ICES — — 10 mAdc hFE 20 40 80 — Cob — 52 — pF Common–Emitter Amplifier Power Gain (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) Gpe 7.5 8.3 — dB Collector Efficiency (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) η 30 36 — % Intermodulation Distortion (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) IMD — – 32 – 28 dBc Input Return Loss (VCC = 26 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz) IRL 12 15 — dB Characteristic OFF CHARACTERISTICS — continued Emitter–Base Breakdown Voltage (IE = 5 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VBE = 0) ON CHARACTERISTICS DC Current Gain (ICE = 1 Adc, VCE = 5 Vdc) DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 26 Vdc, IE = 0, f = 1 MHz) – For Information Only. This Part Is Collector Matched. FUNCTIONAL TESTS (Figure 12) Load Mismatch (VCC = 28 Vdc, Pout = 90 W (PEP), ICQ = 250 mA, f1 = 1490 MHz, f2 = 1490.1 MHz, Load VSWR = 3:1, All Phase Angles at Frequency of Test) MRF15090 2 ψ No Degradation in Output Power MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS 120 9.0 100 Pout 80 8.5 60 40 8.0 VCC = 26 Vdc ICQ = 250 mA f = 1490 MHz Single Tone 0 4 0 12 8 Pin, INPUT POWER (WATTS) 60 40 5W VCC = 26 Vdc ICQ = 250 mA Single Tone 20 0 1400 1420 1440 1460 1480 1500 1520 1540 1560 1580 1600 f, FREQUENCY (MHz) 7.5 20 16 10 W Figure 1. Output Power & Power Gain versus Input Power Figure 2. Output Power versus Frequency 10 3rd Order – 30 5th – 40 7th VCC = 26 Vdc ICQ = 250 mA f1 = 1490 MHz f2 = 1490.1 MHz – 50 20 100 60 80 40 Pout, OUTPUT POWER (WATTS) PEP 30 3.0 5 2.5 Pout = 90 W (PEP) VCC = 26 Vdc ICQ = 250 mA 4 3 20 2.0 10 VSWR 0 1400 120 1420 1460 1480 1500 f, FREQUENCY (MHz) 1440 1520 0 1560 1540 1.5 1.0 Figure 4. Performance in Broadband Circuit 10 9 250 mA – 35 – 40 500 mA – 45 VCC = 26 Vdc f1 = 1490 MHz f2 = 1490.1 MHz – 50 750 mA 1 10 100 G pe , POWER GAIN (dB) ICQ = 100 mA – 30 – 60 0.1 η 6 1 – 20 – 55 40 7 Figure 3. Intermodulation Distortion versus Output Power – 25 Gpe 8 2 – 60 0 IMD, INTERMODULATION DISTORTION (dBc) 50 9 G pe , POWER GAIN (dB) IMD, INTERMODULATION DISTORTION (dBc) – 20 INPUT VSWR 20 80 η , COLLECTOR EFFICIENCY (%) Pout , OUTPUT POWER (WATTS) Gpe G pe , GAIN (dB) Pout , OUTPUT POWER (WATTS) Pin = 15 W 100 ICQ = 750 mA 8 7 500 mA 6 5 250 mA VCC = 26 Vdc f1 = 1490 MHz f2 = 1490.1 MHz 4 3 2 0.1 100 mA 1 10 100 Pout, OUTPUT POWER (WATTS) PEP Pout, OUTPUT POWER (WATTS) PEP Figure 5. Intermodulation Distortion versus Output Power Figure 6. Power Gain versus Output Power MOTOROLA RF DEVICE DATA MRF15090 3 9 60 –10 8.5 40 30 G pe , POWER GAIN (dB) Pout , OUTPUT POWER (dBm) 50 Fundamental 20 10 3rd Order 0 VCC = 24 Vdc IC = 5.0 Adc f1 = 1490 MHz f2 = 1490.1 MHz –10 – 20 – 30 – 40 10 15 25 30 35 Pin, INPUT POWER (dBm) 20 40 45 8 – 20 7.5 – 25 IMD 7 6 18 50 – 30 ICQ = 250 mA f1 = 1490 MHz f2 = 1490.1 MHz 6.5 Figure 7. Class A Third Order Intercept Point – 35 – 40 28 22 20 24 26 VCC, COLLECTOR SUPPLY VOLTAGE (Vdc) Figure 8. Power Gain and Intermodulation Distortion versus Supply Voltage 109 MTBF FACTOR (HOURS x AMPS2 ) 10 8 MTBF Limited Tflange = 75°C 6 Tflange = 100°C Breakdown Limited I C , COLLECTOR CURRENT (Adc) –15 Gpe IMD, INTERMODULATION DISTORTION (dBc) TYPICAL CHARACTERISTICS 4 2 TJ = 175°C 0 0 4 12 20 16 VCE, COLLECTOR VOLTAGE (Vdc) 8 24 Figure 9. DC Safe Operating Area 28 108 107 106 105 100 120 180 220 140 160 200 TJ, JUNCTION TEMPERATURE (°C) 240 260 Figure 10. MTBF Factor versus Junction Temperature The graph above displays calculated MTBF in hours x ampere 2 emitter current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTBF Factor by IC2 for MTBF in a particular application. MRF15090 4 MOTOROLA RF DEVICE DATA 1.45 f = 1.4 GHz 1.5 Zin 1.6 ZOL* 1.55 1.6 1.55 1.5 1.45 Zo = 10 Ω f = 1.4 GHz f (MHz) Zin (Ω) ZOL* (Ω) 1400 3.28 + j9.07 4.62 + j2.23 1450 3.85 + j10.4 4.35 + j3.41 1500 4.55 + j11.4 4.08 + j3.60 1550 5.45 + j11.9 3.80 + j3.78 1600 6.20 + j12.2 3.55 + j3.84 Zin = Input impedance is a balanced base to base measurement. ZOL* = Conjugate of optimum load impedance collector to collector into which the device operates at a given output power, bias current, voltage and frequency. Figure 11. Input and Output Impedances with Circuit Tuned for Maximum Gain @ Pout = 90 Watts (PEP), VCC = 26 Volts, ICQ = 250 mA, and Driven by Two Equal Amplitude Tones with Separation of 100 KHz Table 1. Common Emitter S–Parameters (for One Side of Push–Pull MRF15090) at VCE = 24 Vdc, IC = 2.5 Adc f MHz 1000 1050 1100 1150 1200 1250 1300 1350 1400 1450 1500 1550 1600 1650 1700 1750 1800 1850 1900 1950 2000 S11 |S11| 0.999 0.999 0.994 0.992 0.994 0.986 0.982 0.973 0.957 0.938 0.903 0.857 0.821 0.837 0.872 0.901 0.920 0.940 0.954 0.965 0.971 S21 ∠φ 172 171 170 170 169 168 167 166 164 163 162 163 165 169 170 170 170 169 169 168 167 MOTOROLA RF DEVICE DATA |S21| 0.164 0.179 0.196 0.216 0.241 0.269 0.306 0.351 0.408 0.483 0.571 0.651 0.673 0.623 0.529 0.437 0.363 0.309 0.265 0.232 0.205 S12 ∠φ 108 103 97 92 86 80 73 66 56 44 29 10 –14 – 37 – 56 –70 – 81 – 90 – 98 –104 –110 |S12| 0.006 0.007 0.007 0.008 0.008 0.009 0.010 0.011 0.012 0.013 0.014 0.014 0.013 0.011 0.009 0.008 0.007 0.008 0.008 0.009 0.010 S22 ∠φ 72 69 66 63 62 57 51 45 33 22 7 –13 – 40 – 67 –104 –138 –165 173 150 139 132 |S22| 0.957 0.956 0.948 0.940 0.935 0.924 0.915 0.905 0.888 0.876 0.859 0.855 0.877 0.902 0.922 0.931 0.932 0.930 0.932 0.930 0.929 ∠φ 173 172 172 171 171 170 170 170 170 170 171 173 174 174 173 172 171 170 169 169 168 MRF15090 5 VCC R4 Vbias + Q1 Q3 R3 C9 R6 D1 D2 Q2 Vb C16 + Coax 1 C5 TL2 C7 B1 C18 R7 Balun 2 R1 C10 C13 + L6 B3 R5 L4 L2 C20 L8 C22 TL8 RF Output N2 TL10 C23 RF Input N1 TL6 TL4 C3 TL1 C1 L1 C15 C12 C4 C2 C24 DUT TL3 Balun 1 C6 B2 L10 TL7 TL5 L3 C26 L5 + C8 R2 C11 C14 L9 TL9 B4 L7 C25 + C17 Vb C19 R8 Coax 2 VCC B1, B2, B3, B4 C1 C2 C3, C4, C23, C24 C5, C6, C22, C25 C7, C8, C20, C21 C9, C10, C11 C12 C13, C14, C18, C19 C15 C16, C17 C26 D1 D2 Ferrite Bead, Ferroxcube 2.7 pF, B Case Chip Capacitor, ATC 0.6–4.0 pF, Variable Capacitor, Johanson 18 pF, B Case Chip Capacitor, ATC 51 pF, Chip Capacitor, Murata Erie 1800 pF, Chip Capacitor, Kemit 100 µF, Electrolytic Capacitor, Mallory 5.1 pF, A Case Chip Capacitor, ATC 0.1 µF, Chip Capacitor, Kemit 1.1 pF, B Case Chip Capacitor, ATC 470 µF, Electrolytic Capacitor, Mallory 0.3 pF, B Case Chip Capacitor, ATC Diode, Motorola (MUR5120T3) Light Emitting Diode, Industrial Devices L1 L2, L3, L8, L9 L4, L5, L6, L7 L10 N1, N2 Q1, Q3 Q2 R1, R2, R7, R8 R3 R4 R5 R6 TL1 to TL10 Board 1 Turn, 24 AWG, 0.042″ ID Choke 3 Turn, 20 AWG, 0.126″ ID Choke 12 Turns, 22 AWG, 0.140″ ID Choke 3 Turns, 24 AWG, 0.046″ ID Choke Type N Flange Mount RF Connector, Omni Spectra Transistor, NPN, Motorola (MJD47) Transistor PNP Motorola (BD136) 10 Ω, 1/2 W, Resistor 150 Ω, 1/2 W, Resistor 2 x 66 Ω, 1/8 W, Chip Resistors in Parallel, Rohm 93 Ω, 1/8 W, Chip Resistor, Rohm 22 KΩ, 1/8 W, Chip Resistor, Rohm See Photomaster Glass Teflon, Arlon GX–0300–55–22, εr = 2.55 Figure 12. Class AB Test Fixture Electrical Schematic MRF15090 6 MOTOROLA RF DEVICE DATA Vsupply + R1 C1 Q1 R9 VCC R2 Q3 R17 R10 R3 R7 R19 R15 + C3 R11 + C11 B1 C5 C15 C17 B3 Coax 1 B5 C19 B7 Balun 2 C9 C20 TL2 L4 L2 C21 RF Input N1 RF Output N2 TL10 TL6 TL4 C7 TL8 TL1 C14 C13 L1 TL5 C8 C25 TL7 DUT C22 L5 L3 TL 3 L6 TL9 C23 C10 Balun 1 B4 R4 R1 2 R13 R8 C4 + C6 B2 B8 C16 C12 C18 R16 Coax 2 C24 R20 R18 Q4 Q2 VCC R5 R6 + B6 R14 + C2 Vsupply B1, B2, B5, B6 B3, B4, B7, B8 C1, C2, C3, C4 C5, C6, C17, C18 C7, C8, C21, C22 C9, C10, C20, C23 C11, C12, C19, C24 C13 C14 C15, C16 C25 L1 L2, L3, L4, L5 L6 Long Bead, Fair Rite Short Bead, Fair Rite 100 µF, Electrolytic Capacitor, Mallory 0.1 µF, Chip Capacitor, Kemit 18 pF, B Case Chip Capacitor, ATC 51 pF, Chip Capacitor, Murata Erie 1800 pF, Chip Capacitor, Kemit 4.3 pF, B Case Chip Capacitor, ATC 2.0 pF, B Case Chip Capacitor, ATC 470 µF, Electrolytic Capacitor, Mallory 0.6–4 pF Variable Capacitor, Johanson 3 Turns, 24 AWG, 0.046″ ID Choke 3 Turns, 20 AWG, 0.126″ ID Choke 2 Turns, 24 AWG, 0.042″ ID Choke N1, N2 Q1, Q2 Q3, Q4 R1, R6 R2, R5 R3, R4 R7, R8 Type N Flange Mount RF Connector, Omni Spectra Transistor NPN Motorola (BD135) Transistor PNP Motorola (BD136) 250 Ω, 1/8 W, Chip Resistor, Rohm 500 Ω, 1/4 W, Potentiometer, State of the Art 4.7 Ω, 1/8 W, Chip Resistor, Rohm 2 x 4.7 KΩ, 1/8 W, Chip Resistors in Parallel, Rohm R9, R14 1.0 Ω, 10 W, Resistor, Dale R10, R13 38 Ω, 1 W, Resistor R11, R12 75 Ω, 1/8 W, Chip Resistor, Rohm R15, R16 2 x 10 Ω, 1/8 W, Chip Resistors in Parallel, Rohm R17, R18, R19, R20 4 x 38 Ω, 1/8 W, Chip Resistors in Parallel, Rohm Board Glass Teflon, Arlon GX–0300–55–22, εr = 2.55 Figure 13. Class A Test Fixture Electrical Schematic MOTOROLA RF DEVICE DATA MRF15090 7 PACKAGE DIMENSIONS Q 2 PL G L 0.25 (0.010) 1 T B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 2 –B– R K M 5 3 4 D E N F H –T– A SEATING PLANE STYLE 1: PIN 1. 2. 3. 4. 5. COLLECTOR COLLECTOR BASE BASE EMITTER DIM A B C D E F G H K L N Q R INCHES MIN MAX 1.330 1.350 0.375 0.395 0.180 0.205 0.320 0.340 0.060 0.070 0.004 0.006 1.100 BSC 0.082 0.097 0.580 0.620 0.435 BSC 0.845 0.875 0.118 0.130 0.390 0.410 MILLIMETERS MIN MAX 33.79 34.29 9.52 10.03 4.57 5.21 8.13 8.64 1.52 1.77 0.11 0.15 27.94 BSC 2.08 2.46 14.73 15.75 11.05 BSC 21.46 22.23 3.00 3.30 9.91 10.41 C CASE 375A–01 ISSUE O Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 MRF15090 8 ◊ *MRF15090/D* MRF15090/D MOTOROLA RF DEVICE DATA