Si6954DQ Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET VDS (V) 30 rDS(on) () ID (A) 0.065 @ VGS = 10 V 3.9 0.095 @ VGS = 4.5 V 3.1 D1 D2 TSSOP-8 8 D2 7 S2 3 6 S2 4 5 G2 D1 1 S1 2 S1 G1 Si6954DQ G1 G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 150C) 150 C)a TA = 25C ID TA = 70C Pulsed Drain Current Continuous Source Current (Diode Conduction)a TA = 25C Maximum Power Dissipationa TA = 70C Operating Junction and Storage Temperature Range Unit V 3.9 3.1 IDM 20 IS 1.25 A 1.0 PD W 0.64 TJ, Tstg –55 to 150 C Symbol Limit Unit RthJA 125 C/W Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t 10 sec. Document Number: 70179 S-49534—Rev. C, 06-Oct-97 www.vishay.com FaxBack 408-970-5600 2-1 Si6954DQ Vishay Siliconix Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Zero Gate Voltage Drain Current IDSS Typ Max Unit Static Gate Threshold Voltage On-State Drain Currenta Drain Source On-State Drain-Source On State Resistancea ID(on) rDS(on) DS( ) Forward Transconductancea gfs Diode Forward Voltagea VSD V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 55C 25 VDS w 5 V, VGS = 10 V 15 nA mA A VGS = 10 V, ID = 3.9 A 0.043 0.065 VGS = 4.5 V, ID = 3.1 A 0.075 0.095 VDS = 15 V, ID = 3.9 A 7.0 IS = 1.25 A, VGS = 0 V 0.77 1.2 9.8 15 W S V Dynamicb Total Gate Charge Qg VDS = 10 V, V VGS = 10 V V, ID = 3.9 39A nC C Gate-Source Charge Qgs Gate-Drain Charge Qgd 1.6 Turn-On Delay Time td(on) 9 15 tr 6 12 18 27 6 12 48 80 Rise Time Turn-Off Delay Time td(off) Fall Time tf Source-Drain Reverse Recovery Time trr VDD = 10 V V,, RL = 10 W ID ^ 1 A, A VGEN = 10 V V, RG = 6 W IF = 1.25 A, di/dt = 100 A/ms 2.1 ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70179 S-49534—Rev. C, 06-Oct-97 Si6954DQ Vishay Siliconix Output Characteristics Transfer Characteristics 20 20 VGS = 10 thru 6 V TC = –55C 5V 25C 16 I D – Drain Current (A) I D – Drain Current (A) 16 12 8 4V 4 125C 12 8 4 3V 0 0 0 2 4 6 8 0 1 2 4 5 6 25 30 VGS – Gate-to-Source Voltage (V) VDS – Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 0.20 750 0.16 600 VGS = 4.5 V C – Capacitance (pF) r DS(on)– On-Resistance ( ) 3 0.12 0.08 VGS = 10 V 0.04 Ciss 450 300 Coss 150 Crss 0 0 0 4 8 12 16 20 0 5 ID – Drain Current (A) r DS(on)– On-Resistance ( ) (Normalized) V GS – Gate-to-Source Voltage (V) 2.0 VDS = 10 V ID = 3.9 A 8 6 4 2 0 0 2 4 6 Qg – Total Gate Charge (nC) Document Number: 70179 S-49534—Rev. C, 06-Oct-97 15 20 VDS – Drain-to-Source Voltage (V) Gate Charge 10 10 8 10 1.6 On-Resistance vs. Junction Temperature VGS = 10 V ID = 3.9 A 1.2 0.8 0.4 –50 –25 0 25 50 75 100 125 150 TJ – Junction Temperature (C) www.vishay.com FaxBack 408-970-5600 2-3 Si6954DQ Vishay Siliconix Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.20 20 r DS(on)– On-Resistance ( W ) I S – Source Current (A) TJ = 150C 10 TJ = 25C 0.16 0.12 ID = 3.9 A 0.08 0.04 0 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 VSD – Source-to-Drain Voltage (V) 2 4 8 10 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 30 ID = 250 mA 0.2 25 –0.0 20 Power (W) V GS(th) Variance (V) 6 –0.2 –0.4 10 –0.6 5 –0.8 –1.0 –50 15 –25 0 25 50 75 100 125 0 150 0.01 0.1 TJ – Temperature (C) 1 10 30 Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 125C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70179 S-49534—Rev. C, 06-Oct-97