Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR NPN SILICON • Specified 28 Volt, 1.6 GHz Class–C Characteristics Output Power = 30 Watts Minimum Gain = 7.5 dB, @ 30 Watts Minimum Efficiency = 40% @ 30 Watts • Characterized with Series Equivalent Large–Signal Parameters from 1500 MHz to 1700 MHz • Silicon Nitride Passivated • Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal Migration • Circuit board photomaster available upon request by contacting RF Tactical Marketing in Phoenix, AZ. CASE 395C–01, STYLE 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Collector–Emitter Voltage VCES 60 Vdc Emitter–Base Voltage VEBO 4.0 Vdc Collector–Current IC 4.0 Adc Total Device Dissipation @ TC = 25°C Derate above 25°C PD 103 0.58 Watts °C/W Storage Temperature Range Tstg – 65 to +150 °C RθJC 1.7 °C/W THERMAL CHARACTERISTICS Thermal Resistance — Junction to Case (1) (2) (1) Thermal measurement performed using CW RF operating condition. (2) Thermal resistance is determined under specified RF operating conditions by infrared measurement techniques. REV 3 RF DEVICE DATA MOTOROLA Motorola, Inc. 1997 MRF16030 1 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max 55 — — 55 — — — — — — 10 20 35 80 7.5 7.7 — 40 45 — 8.0 — — Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 100 mAdc, VBE = 0) V(BR)CES Collector–Base Breakdown Voltage (IC = 100 mAdc, IE = 0) V(BR)CBO Emitter–Base Breakdown Voltage (IE = 10 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 28 Vdc, VBE = 0) Vdc Vdc 4.0 Vdc ICES mAdc ON CHARACTERISTICS DC Current Gain (ICE = 1.0 Adc, VCE = 5.0 Vdc) hFE — FUNCTIONAL TESTS Collector–Base Amplifier Power Gain (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) Gpe Collector Efficiency (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) η Input Return Loss (VCC = 28 Vdc, Pout = 30 Watts, f = 1600/1640 MHz) IRL Output Mismatch Stress VCC = 28 Vdc, Pout = 30 Watts, f = 1600 MHz, Load VSWR = 3:1, All phase angles at frequency of test Ψ MRF16030 2 dB % dB No Degradation in Output Power MOTOROLA RF DEVICE DATA L3 B1 28 Vdc C1 C2 R1 C3 C4 L2 L1 C5 Board Material – Teflon Glass Laminate Dielectric Thickness = 0.30″, εr = 2.55″, 2.0 oz. Copper B1 C1, C5 C2 C3 Fair Rite Bead on #24 Wire 100 pF, B Case, ATC Chip Cap 0.1 µF, Dipped Mica Cap 0.1 µF, Chip Cap C4 L1, L2 L3 R1 47 µF, 50 V, Electrolytic 3 Turns, #18, 0.133″ ID, 0.15″ Long 9 Turns, #24 Enamel 82 Ω, 1.0 W, Carbon Figure 1. MRF16030 Test Fixture Schematic f = 1.5 GHz 1.7 GHz ZOL* 1.6 GHz 1.6 GHz Zin 1.7 GHz f = 1.5 GHz Zo = 10 Ω VCC = 28 Vdc, Pout = 30 W f MHz Zin Ohms ZOL* Ohms 1500 3.05 + j 4.88 2.66 + j 2.53 1600 4.32 + j 6.00 1.79 + j 2.80 1700 5.62 + j 5.79 1.51 + j 2.64 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage and frequency. Figure 2. Series Equivalent Input/Output Impedance MOTOROLA RF DEVICE DATA MRF16030 3 Pout , OUTPUT POWER (WATTS) 45 f = 1.6 GHz 40 1.64 GHz 35 30 25 VCC = 28 Vdc 20 15 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 Pin, INPUT POWER (WATTS) 8.0 8.5 9.0 Figure 3. Output Power versus Input Power MRF16030 4 MOTOROLA RF DEVICE DATA PACKAGE DIMENSIONS –A– U Q 2 PL 1 0.51 (0.020) M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. –B– DIM A B C D E H J K N Q U 3 K 2 D N MILLIMETERS MIN MAX 18.77 19.05 6.10 6.60 4.19 5.03 5.46 5.72 1.40 1.78 2.01 2.31 0.10 0.15 5.33 6.10 8.00 8.38 3.18 3.42 14.23 BSC STYLE 2: PIN 1. EMITTER 2. COLLECTOR 3. BASE E J H INCHES MIN MAX 0.739 0.750 0.240 0.260 0.165 0.198 0.215 0.225 0.055 0.070 0.079 0.091 0.004 0.006 0.210 0.240 0.315 0.330 0.125 0.135 0.560 BSC C –T– SEATING PLANE CASE 395C–01 ISSUE A MOTOROLA RF DEVICE DATA MRF16030 5 Motorola reserves the right to make changes without further notice to any products herein. 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