PANASONIC 2SB1011

Power Transistors
2SB1011
Silicon PNP triple diffusion planar type
For low-frequency output amplification
Unit: mm
8.0+0.5
–0.1
■ Features
3.2±0.2
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
−400
V
Collector-emitter voltage (Base open)
VCEO
−400
V
Emitter-base voltage (Collector open)
VEBO
−5
V
Collector current
IC
−100
mA
Peak collector current
ICP
−200
mA
Collector power dissipation
PC
1.2
W
0.75±0.1
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
0.5±0.1
4.6±0.2
1
3.05±0.1
3.8±0.3
1.9±0.1
■ Absolute Maximum Ratings Ta = 25°C
16.0±1.0
• High collector-base voltage (Emitter open) VCBO
• High collector-emitter voltage (Base open) VCEO
• Large collector power dissipation PC
• Low collector-emitter saturation voltage VCE(sat)
11.0±0.5
φ 3.16±0.1
2
0.5±0.1
1.76±0.1
2.3±0.2
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
3
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Collector-base voltage (Emiter open)
VCBO
IC = −100 µA, IE = 0
Conditions
−400
Collector-emitter voltage (Base open)
VCEO
IC = −500 µA, IB = 0
−400
V
Emiter-base voltage (Collector open)
VEBO
IE = −100 µA, IC = 0
−5
V
30
hFE
VCE = −5 V, IC = −30 mA
Collector-emitter saturation voltage
VCE(sat)
IC = −50 mA, IB = −5 mA
Base-emitter saturation voltage
VBE(sat)
IC = −50 mA, IB = −5 mA
Forward current transfer ratio
Transition frequency
Collector output capacitance
(Common base, input open circuited)
fT
Cob
VCB = −30 V, IE = 20 mA, f = 200 MHz
VCB = −30 V, IE = 0, f = 1 MHz
Min
Typ
Max
Unit
V

−2.5
−1.5
70
V
V
MHz
9
pF
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: March 2003
SJD00036BED
1
2SB1011
PC  Ta
IC  VCE
IC  VBE
−120
TC=25˚C
−100
Collector current IC (mA)
1.2
0.8
0.4
−80
–0.8mA
−60
–0.6mA
–0.5mA
–0.4mA
−40
0
0
40
80
120
160
−2
0
TC=75˚C
25˚C
–25˚C
−1
−10
–25˚C
0
25˚C
120
–25˚C
80
40
−1
−10
−100
Collector current IC (mA)
Single pulse
TC=25˚C
ICP
Collector current IC (A)
20
15
10
t=10ms
t=100ms
IC
t=1s
−10
−1
5
−100
Collector-base voltage VCB (V)
− 0.1
−1
−10
−100
−1 000
Collector-emitter voltage VCE (V)
SJD00036BED
− 0.4
− 0.6
− 0.8
−1.0
VCB=–30V
f=200MHz
TC=25˚C
100
80
60
40
20
0
1
10
100
Emitter current IE (mA)
Sefe operation area
−1 000
− 0.2
Base-emitter voltage VBE (V)
fT  I E
160
0
− 0.1
−100
IE=0
f=1MHz
TC=25˚C
−10
−40
120
Ta=75˚C
−100
0
−1
−60
0
−12
200
Cob  VCB
25
−10
VCE=–5V
Collector current IC (mA)
30
−8
240
Forward current transfer ratio hFE
Collector-emitter saturation voltage VCE(sat) (V)
−1
− 0.01
− 0.1
−6
−80
hFE  IC
−10
− 0.1
−4
TC=75˚C
Collector-emitter voltage VCE (V)
IC/IB=10
25˚C
−20
–0.1mA
VCE(sat)  IC
−100
Collector output capacitance
C (pF)
(Common base, input open circuited) ob
–0.3mA
–0.2mA
Ambient temperature Ta (°C)
2
IB=–1mA
–0.7mA
−20
0
VCE=–5V
−100
–0.9mA
Transition frequency fT (MHz)
Collector power dissipation PC (W)
Without heat sink
−120
Collector current IC (mA)
1.6
1 000
2SB1011
Rth  t
Thermal resistance Rth (°C/W)
104
free air
103
102
10
1
10−1
10−4
10−3
10−2
10−1
1
10
102
103
104
Time t (s)
SJD00036BED
3
Request for your special attention and precautions in using the technical information
and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government
if any of the products or technologies described in this material and controlled under the "Foreign
Exchange and Foreign Trade Law" is to be exported or taken out of Japan.
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(3) We are not liable for the infringement of rights owned by a third party arising out of the use of the
product or technologies as described in this material.
(4) The products described in this material are intended to be used for standard applications or general
electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
• Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment,
combustion equipment, life support systems and safety devices) in which exceptional quality and
reliability are required, or if the failure or malfunction of the products may directly jeopardize life or
harm the human body.
• Any applications other than the standard applications intended.
(5) The products and product specifications described in this material are subject to change without
notice for modification and/or improvement. At the final stage of your design, purchasing, or use of
the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that
the latest specifications satisfy your requirements.
(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of
incidence of break down and failure mode, possible to occur to semiconductor products. Measures
on the systems such as redundant design, arresting the spread of fire or preventing glitch are
recommended in order to prevent physical injury, fire, social damages, for example, by using the
products.
(7) When using products for which damp-proof packing is required, observe the conditions (including
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2002 JUL