Transistor 2SB642 Silicon PNP epitaxial planer type For low-power general amplification Unit: mm 6.9±0.1 1.0 0.85 (Ta=25˚C) Symbol Ratings Unit Collector to base voltage VCBO –60 V Collector to emitter voltage VCEO –50 V Emitter to base voltage VEBO –7 V Peak collector current ICP –200 mA Collector current IC –100 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics 4.5±0.1 0.55±0.1 Parameter 3 0.45±0.05 2 2.5 1:Base 2:Collector 3:Emitter 1 1.25±0.05 ■ Absolute Maximum Ratings 4.1±0.2 7 0. High foward current transfer ratio hFE. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 1.0 R ● 1.0±0.1 ● 0.4 ■ Features 2.5±0.1 1.5 R0.9 R0.9 2.4±0.2 2.0±0.2 3.5±0.1 1.5 2.5 EIAJ:SC–71 M Type Mold Package (Ta=25˚C) Parameter Symbol Conditions min typ max Unit ICBO VCB = –20V, IE = 0 –1 nA ICEO VCE = –20V, IB = 0 –1 µA Collector to base voltage VCBO IC = –10µA, IE = 0 –60 V Collector to emitter voltage VCEO IC = –2mA, IB = 0 –50 V Emitter to base voltage VEBO IE = –10µA, IC = 0 –7 Forward current transfer ratio hFE* VCE = –10V, IC = –2mA 160 Collector to emitter saturation voltage VCE(sat) IC = –100mA, IB = –10mA Transition frequency fT VCB = –10V, IE = 2mA, f = 200MHz 80 MHz Collector output capacitance Cob VCB = –10V, IE = 0, f = 1MHz 3.5 pF Collector cutoff current *h FE V 460 –1 V Rank classification Rank Q R S hFE 160 ~ 260 210 ~ 340 290 ~ 460 1 Transistor 2SB642 PC — Ta IC — VCE IC — I B –60 –60 Ta=25˚C 450 300 250 200 150 100 –50 Collector current IC (mA) 350 –250µA –40 –200µA –30 –150µA –20 –100µA –10 –30 –20 –10 –50µA 0 20 40 60 80 100 120 140 160 0 0 Ambient temperature Ta (˚C) –4 –8 –12 –16 –20 0 Collector to emitter voltage VCE (V) IB — VBE –150 IC — VBE –400 VCE=–5V –350 25˚C Collector current IC (mA) –200 Base current IB (µA) –300 Ta=75˚C –25˚C –160 –250 –150 –100 –10 IC/IB=10 –3 –1 Ta=75˚C 25˚C – 0.3 –120 –200 –450 VCE(sat) — IC –240 VCE=–5V Ta=25˚C –300 Base current IB (µA) Collector to emitter saturation voltage VCE(sat) (V) 0 –25˚C – 0.1 – 0.03 –80 – 0.01 –40 –50 – 0.003 0 0 0 – 0.6 –1.2 –1.8 0 Base to emitter voltage VBE (V) – 0.4 – 0.8 –1.2 –1.6 –2.0 hFE — IC fT — I E Ta=75˚C 300 25˚C –25˚C 200 100 140 120 100 80 60 40 20 –3 –10 –30 –100 –300 –1000 Collector current IC (mA) –30 –100 –300 –1000 Cob — VCB Collector output capacitance Cob (pF) 400 –10 8 VCB=–10V Ta=25˚C Transition frequency fT (MHz) 500 –3 Collector current IC (mA) 160 VCE=–10V 0 –1 – 0.001 –1 Base to emitter voltage VBE (V) 600 Forward current transfer ratio hFE –40 50 0 2 VCE=–5V Ta=25˚C IB=–300µA –50 400 Collector current IC (mA) Collector power dissipation PC (mW) 500 0 0.1 0.3 1 3 10 30 Emitter current IE (mA) 100 IE=0 f=1MHz Ta=25˚C 7 6 5 4 3 2 1 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Transistor 2SB642 NF — IE IC=–1mA f=10.7MHz Ta=25˚C 20 VCB=–5V f=1kHz Rg=2kΩ Ta=25˚C 5 4 3 2 1 VCB=–5V Rg=50kΩ Ta=25˚C 18 16 Noise figure NF (dB) 5 NF — IE 6 Noise figure NF (dB) Common emitter reverse transfer capacitance Cre (pF) Cre — VCE 6 4 3 2 14 12 f=100Hz 10 1kHz 8 10kHz 6 4 1 2 0 0 –5 –10 –15 –20 –25 0 0.01 0.03 –30 Collector to emitter voltage VCE (V) 0.1 0.3 1 3 0 0.1 10 Emitter current IE (mA) h Parameter — IE 0.3 1 3 10 Emitter current IE (mA) h Parameter — VCE ICBO — Ta 100 300 300 hfe hfe 100 hoe (µS) 30 10 30 hoe (µS) 10 hie (kΩ) 3 1 0.1 3 1 3 Emitter current IE (mA) 10 10 3 hre (✕10–4) hie (kΩ) VCE=–5V f=270Hz Ta=25˚C hre (✕10–4) 0.3 30 ICBO (Ta) ICBO (Ta=25˚C) h Parameter h Parameter 100 VCB=–10V IE=2mA f=270Hz Ta=25˚C 1 –1 1 –3 –10 –30 –100 Collector to emitter voltage VCE (V) 0 25 50 75 100 125 150 Ambient temperature Ta (˚C) 3