FAIRCHILD 2N3415

2N3415
E
TO-92
CB
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
Symbol
TA = 25°C unless otherwise noted
Parameter
Value
Units
V
VCEO
Collector-Emitter Voltage
25
VCBO
Collector-Base Voltage
25
V
VEBO
Emitter-Base Voltage
5.0
V
IC
Collector Current - Continuous
500
mA
TJ, Tstg
Operating and Storage Junction Temperature Range
-55 to +150
°C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD
TA = 25°C unless otherwise noted
Characteristic
RθJC
Total Device Dissipation
Derate above 25° C
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
 1997 Fairchild Semiconductor Corporation
Max
Units
2N3415
625
5.0
83.3
mW
mW/°C
°C/W
200
°C/W
2N3415
Discrete POWER & Signal
Technologies
(continued)
Electrical Characteristics
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Max
Units
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
Collector-Emitter Breakdown
Voltage*
Collector-Base Breakdown Voltage
V(BR)EBO
Emitter-Base Breakdown Voltage
ICBO
Collector-Cutoff Current
IEBO
Emitter-Cutoff Current
IC = 10 mA, IB = 0
IC = 10 µA, IE = 0
IE = 10 µA, I C = 0
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0, TA = 100°C
VEB = 5.0 V, I C = 0
25
V
25
V
5.0
V
0.1
15
0.1
µA
µA
µA
ON CHARACTERISTICS*
hFE
DC Current Gain
VCE = 4.5 V, I C = 2.0 mA
VCE(sat )
Collector-Emitter Saturation Voltage
IC = 50 mA, IB = 3.0 mA
180
VBE(sat)
Base-Emitter Saturation Voltage
IC = 50 mA, IB = 3.0 mA
0.6
IC = 2.0 mA, VCE = 4.5 V,
f = 1.0 kHz
180
SMALL SIGNAL CHARACTERISTICS
hfe
Small-Signal Current Gain
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
540
0.3
V
1.3
V
2N3415
NPN General Purpose Amplifier