VISHAY BAV17

BAV17...BAV21
Vishay Telefunken
Silicon Epitaxial Planar Diodes
Applications
General purposes
94 9367
Absolute Maximum Ratings
Tj = 25_C
Parameter
Peak reverse voltage
g
Test Conditions
Reverse voltage
g
Forward current
Peak forward surge current
Forward peak current
Junction temperature
Storage temperature range
tp=1s, Tj=25°C
f=50Hz
Type
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
Symbol
VRRM
VRRM
VRRM
VRRM
VRRM
VR
VR
VR
VR
VR
IF
IFSM
IFM
Tj
Tstg
Value
25
60
120
200
250
20
50
100
150
200
250
1
625
175
–65...+175
Unit
V
V
V
V
V
V
V
V
V
V
mA
A
mA
°C
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Document Number 85543
Rev. 2, 01-Apr-99
Test Conditions
l=4mm, TL=constant
Symbol
RthJA
Value
350
Unit
K/W
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BAV17...BAV21
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Test Conditions
IF=100mA
VR=20V
VR=50V
VR=100V
VR=150V
VR=200V
Tj=100°C, VR= 20V
Tj=100°C, VR= 50V
Tj=100°C, VR=100V
Tj=100°C, VR=150V
Tj=100°C, VR=200V
IR=100mA, tp/T=0.01,
tp=0.3ms
Breakdown voltage
g
Type
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
BAV17
BAV18
BAV19
BAV20
BAV21
Diode capacitance
VR=0, f=1MHz
Differential forward resistance IF=10mA
Reverse recovery time
IF=IR=30mA, iR=3mA,
RL=100W
Symbol
VF
IR
IR
IR
IR
IR
IR
IR
IR
IR
IR
V(BR)
V(BR)
V(BR)
V(BR)
V(BR)
CD
rf
trr
Min
Typ
Max
1
100
100
100
100
100
15
15
15
15
15
Unit
V
nA
nA
nA
nA
nA
mA
mA
mA
mA
mA
V
V
V
V
V
pF
50
ns
25
60
120
200
250
1.5
5
W
Characteristics (Tj = 25_C unless otherwise specified)
1000
IF – Forward Current ( mA )
I R – Reverse Current ( mA )
1000
100
Scattering Limit
10
1
VR = VRRM
0.1
Tj = 25°C
100
0.01
1
0.1
0
94 9084
Scattering Limit
10
40
80
120
160
Tj – Junction Temperature ( °C )
Figure 1. Reverse Current vs.
Junction Temperature
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200
0
94 9085
0.4
0.8
1.2
1.6
2.0
VF – Forward Voltage ( V )
Figure 2. Forward Current vs.
Forward Voltage
Document Number 85543
Rev. 2, 01-Apr-99
BAV17...BAV21
rf – Differential Forward Resistance (W )
Vishay Telefunken
1000
100
Tj = 25°C
10
1
0.1
94 9089
1
10
100
IF – Forward Current ( mA )
Figure 3. Differential Forward Resistance vs.
Forward Current
Dimensions in mm
Cathode Identification
∅ 0.55 max.
technical drawings
according to DIN
specifications
94 9366
∅ 1.7 max.
Standard Glass Case
54 A 2 DIN 41880
JEDEC DO 35
Weight max. 0.3 g
Document Number 85543
Rev. 2, 01-Apr-99
26 min.
3.9 max.
26 min.
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BAV17...BAV21
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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Document Number 85543
Rev. 2, 01-Apr-99