LTC5509 300MHz to 3GHz RF Power Detector in SC70 Package U FEATURES ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Temperature Compensated Internal Schottky Diode RF Detector Wide Input Frequency Range: 300MHz to 3GHz Wide Input Power Range: –30dBm to 6dBm Buffered Detector Output Wide VCC Range of 2.7V to 6V Low Operating Current: 600µA Low Shutdown Current: <2µA SC70 Package U APPLICATIO S ■ ■ ■ ■ ■ Multimode Mobile Phone Products Optical Data Links Wireless Data Modems Wireless and Cable Infrastructure RF Power Alarm Envelope Detector The RF input voltage is peak detected using an on-chip Schottky diode. The detected voltage is buffered and supplied to the VOUT pin without gain compression. Consequently, the output voltage is linearly proportional to the RF input voltage. A power saving shutdown mode reduces supply current to less than 2µA. The LTC5509 operates with input power levels from –30dBm to 6dBm. , LTC and LT are registered trademarks of Linear Technology Corporation. U ■ The LTC®5509 is an RF power detector for RF applications operating in the 300MHz to 3GHz range. A temperature compensated Schottky diode peak detector and buffer amplifier are combined in a small SC70 package. The supply voltage range is optimized for operation from a single lithium-ion cell or 3xNiMH. TYPICAL APPLICATIO Output Voltage vs RF Input Power 300MHz to 3GHz RF Power Detector RF INPUT 33pF 6 2 DISABLE ENABLE 1 LTC5509 VCC 4 RFIN 5 GND GND SHDN VOUT 3 VOUT VCC 100pF 0.1µF 5509 TA01 VOUT OUTPUT VOLTAGE (mV) 3000 VCC = 3.6V TA = 25°C 2500 850MHz 1.85GHz 2000 3GHz 1500 1000 500 0 0 –30 –25 –20 –15 –10 –5 RF INPUT POWER (dBm) 5 10 5509 TA02 5509f 1 LTC5509 W W W AXI U U ABSOLUTE RATI GS U U W PACKAGE/ORDER I FOR ATIO (Note 1) VCC, VOUT to GND .................................... –0.3V to 6.5V RFIN Voltage .........................................(VCC ± 1V) to 7V SHDN Voltage to GND ................ –0.3V to (VCC + 0.3V) IVOUT ...................................................................... 5mA Operating Temperature Range (Note 2) .. – 40°C to 85°C Maximum Junction Temperature ......................... 125°C Storage Temperature Range ................ – 65°C to 150°C Lead Temperature (Soldering, 10 sec)................. 300°C ORDER PART NUMBER TOP VIEW SHDN 1 6 RFIN GND 2 5 GND VOUT 3 4 VCC LTC5509ESC6 SC6 PART MARKING SC6 PACKAGE 6-LEAD PLASTIC SC70 TJMAX = 125°C, θJA = 256°C/W LADD Consult LTC Marketing for parts specified with wider operating temperature ranges. ELECTRICAL CHARACTERISTICS The ● denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VCC = 3.6V, SHDN = VCC = HI, SHDN = 0V = LO, RF Input Signal is Off, unless otherwise noted. PARAMETER CONDITIONS MIN VCC Operating Voltage ● IVCC Shutdown Current SHDN = LO ● IVCC Operating Current SHDN = HI, IVOUT = 0mA ● VOUT VOL (No RF Input) RLOAD = 2k, SHDN = HI, Enabled SHDN = LOW, Disabled VOUT Output Current VOUT = 1.75V, VCC = 2.7V, ∆VOUT = 10mV ● VOUT Enable Time SHDN = HI, CLOAD = 33pF, RLOAD = 2k ● VOUT Bandwidth CLOAD = 33pF, RLOAD = 2k (Note 4) VOUT Load Capacitance (Note 6) TYP 2.7 MAX UNITS 6 V 2 µA 0.58 0.85 mA 150 250 1 400 mV mV 1 2 8 mA 20 1.5 33 ● µs MHz pF VOUT Slew Rate VRFIN = 0.7V Step, CLOAD = 33pF, RLOAD = 2k (Note 3) 8 V/µs VOUT Noise VCC = 3V, Noise BW = 1.5MHz, 50Ω RF Input Termination 2 mVP-P SHDN Voltage, Chip Disabled VCC = 2.7V to 6V ● SHDN Voltage, Chip Enabled VCC = 2.7V to 6V ● SHDN Input Current SHDN = 3.6V ● RFIN Input Frequency Range 0.35 V 40 µA 1.4 V 24 300 to 3000 MHz –30 to 6 dBm RFIN Input Power Range RF Frequency = 300MHz to 3GHz (Note 5, 6) RFIN AC Input Resistance F = 300MHz, Pin = –25dBm 150 Ω RFIN Input Shunt Capacitance F = 300MHz, Pin = –25dBm 0.9 pF Note 1: Absolute Maximum Ratings are those values beyond which the life of a device may be impaired. Note 2: Specifications over the –40°C to 85°C operating temperature range are assured by design, characterization and correlation with statistical process controls. Note 3: The rise time at VOUT is measured between VOUT/2 + 0.5V to VOUT/2 – 0.5V. Note 4: Bandwidth is calculated using the 10% to 90% rise time equation: BW = 0.35/rise time. Note 5: RF performance is tested at 1800MHz Note 6: Guaranteed by design. 5509f 2 LTC5509 U W TYPICAL PERFOR A CE CHARACTERISTICS Output Voltage vs Supply Voltage (RF Input Signal Off) Supply Current vs Supply Voltage 3000 305 600 TA = –40°C TA = 25°C TA = 85°C 550 3 5 3.5 4 4.5 SUPPLY VOLTAGE (V) 5.5 295 TA = 25°C TA = 85°C 290 2.5 3 5 3.5 4 4.5 SUPPLY VOLTAGE (V) 5.5 5509 G01 VOUT OUTPUT VOLTAGE (mV) 2500 2000 TA = 25°C 1500 TA = –40°C 1000 TA = 85°C 500 0 0 –30 –25 –20 –15 –10 –5 RF INPUT POWER (dBm) 5 5 10 5509 G03 VOUT Slope vs RF Input Power at 850MHz 1000 VCC = 3.6V 2500 100 2000 TA = 25°C 1500 TA = –40°C 1000 TA = 85°C 10 TA = –40°C 0 0 –30 –25 –20 –15 –10 –5 RF INPUT POWER (dBm) 10 5 TA = 85°C TA = 25°C 500 1 –30 –25 –20 10 –15 –10 –5 0 5 RF INPUT POWER (dBm) 5509 G05 5509 G06 VOUT Slope vs RF Input Power at 3000MHz VOUT Slope vs RF Input Power at 1850MHz 1000 VOUT SLOPE (mV/dB) VCC = 3.6V VCC = 3.6V 100 100 10 TA = 85°C 500 6 VCC = 3.6V 5509 G04 VOUT SLOPE (mV/dB) VOUT OUTPUT VOLTAGE (mV) 3000 1000 TA = –40°C 1000 Typical Detector Characteristics, 3000MHz VCC = 3.6V 0 0 –30 –25 –20 –15 –10 –5 RF INPUT POWER (dBm) TA = 25°C 1500 5509 G02 Typical Detector Characteristics, 1850MHz 3000 2000 285 6 VCC = 3.6V 2500 VOUT SLOPE (mV/dB) 2.5 TA = –40°C 300 VOUT OUTPUT VOLTAGE (mV) VOUT OUTPUT VOLTAGE (mV) SUPPLY CURRENT (µA) 650 Typical Detector Characteristics, 850MHz TA = –40°C TA = 85°C 10 TA = –40°C TA = 25°C TA = 25°C 1 –30 –25 –20 –15 –10 TA = 85°C –5 0 5 1 –30 –25 –20 –15 –10 –5 0 5 RF INPUT POWER (dBm) RF INPUT POWER (dBm) 5509 G07 5509 G08 5509f 3 LTC5509 U W TYPICAL PERFOR A CE CHARACTERISTICS RFIN Input Impedance (Pin = 0dBm, VCC = 3.6V, TA = 25°C) PNT # FREQUENCY (GHz) RESISTANCE (Ω) REACTANCE (Ω) 1 0.300 185.434 – 62.632 2 0.468 173.804 – 65.491 3 0.637 161.644 – 71.893 4 0.806 149.450 – 76.830 5 0.975 137.402 – 79.300 6 1.143 126.251 – 81.429 7 1.312 114.165 – 84.108 8 1.481 100.350 – 83.547 9 1.650 89.015 – 80.053 10 1.818 80.586 – 74.762 11 1.987 73.674 – 70.242 12 2.156 67.737 – 66.323 13 2.325 62.354 – 61.497 14 2.493 57.833 – 57.213 15 2.662 53.701 – 53.443 16 2.831 50.166 – 48.992 17 3.000 47.094 – 44.997 RFIN Input Impedance (Pin = –25dBm, VCC = 3.6V, TA = 25°C) PNT # FREQUENCY (GHz) RESISTANCE (Ω) REACTANCE (Ω) 1 0.300 146.073 – 48.091 2 0.468 140.112 – 44.500 3 0.637 133.522 – 46.654 4 0.806 127.142 – 50.559 5 0.975 120.560 – 52.094 6 1.143 114.518 – 53.472 7 1.312 107.427 – 58.362 8 1.481 96.348 – 61.184 9 1.650 86.158 – 59.226 10 1.818 79.014 – 55.746 11 1.987 73.054 – 52.613 12 2.156 67.785 – 49.515 13 2.325 63.701 – 46.430 14 2.493 59.598 – 43.378 15 2.662 55.559 – 40.355 16 2.831 52.713 – 37.150 17 3.000 49.898 – 34.268 S11 Forward Reflection Impedance 0.300000GHz TO 3.000000GHz 5509 TA03 S11 Forward Reflection Impedance 0.300000GHz TO 3.000000GHz 5509 TA04 5509f 4 LTC5509 U U U PI FU CTIO S SHDN (Pin 1): Shutdown Input. A logic low on the SHDN pin places the part in shutdown mode. A logic high enables the part. SHDN has an internal 150k pull down resistor to ensure that the part is in shutdown when no input is applied. GND (Pin 2, 5): Ground. VOUT (Pin 3): Detector Output. VCC (Pin 4): Power Supply Voltage, 2.7V to 6V. VCC should be bypassed appropriately with ceramic capacitors. RFIN (Pin 6): RF Input Voltage. Referenced to VCC. A coupling capacitor must be used to connect to the RF signal source. The frequency range is 300MHz to 3GHz. This pin has an internal 250Ω termination, an internal Schottky diode detector and a peak detector capacitor. W BLOCK DIAGRA RFSOURCE 33pF TO 200pF (DEPENDING ON APPLICATION) VCC 4 + BUFFER 3 VOUT – 30k 250Ω RFIN 6 30k 27k 28pF 27k 60µA 100Ω 100Ω + RF DET 130mV – 40k 60µA BIAS 150k GND 2 GND 5 1 5509 BD SHDN 5509f 5 LTC5509 U U W U APPLICATIO S I FOR ATIO Operation The LTC5509 RF detector integrates several functions to provide RF power detection over frequencies ranging from 300MHz to 3GHz. These functions include an internally compensated buffer amplifier, an RF Schottky diode peak detector and level shift amplifier to convert the RF feedback signal to DC and a delay circuit to avoid voltage transients at VOUT when coming out of shutdown. The LTC5509 does not incorporate gain compression. Consequently, it offers a linear transfer relationship between RF input voltage and DC output voltage. Buffer Amplifier The buffer amplifier is capable of driving a 2mA load. The buffer amplifier typically has an output voltage range of 0.25V to 3V with VCC = 3.6V. At lower supply voltages the maximum output swing is reduced. The Schottky detector is biased at about 60µA and drives a peak detector capacitor of 28pF. Modes of Operation MODE SHDN OPERATION Shutdown Low Disabled Enable High Power Detect Applications The LTC5509 can be used as a self-standing signal strength measuring receiver for a wide range of input signals from –30dBm to 6dBm for frequencies from 300MHz to 3GHz. RF Detector The LTC5509 can be used as a demodulator for AM and ASK modulated signals with data rates up to 1.5MHz. Depending on specific application needs, the RSSI output can be split into two branches, providing AC-coupled data (or audio) output and DC-coupled, RSSI output for signal strength measurements and AGC. The internal RF Schottky diode peak detector and level shift amplifier converts the RF input signal to a low frequency signal. The detector demonstrates excellent efficiency and linearity over a wide range of input power. The LTC5509 can be used for RF power detection and control. Refer to Application Note 91, “Low Cost Coupling Methods for RF Power Detectors Replace Directional Couplers.” Demo Board Schematic VCC R3 22k E4 SHDN C1 33pF ENABLE 1 2 DISABLE 3 JP1 VOUT E2 E3 GND R2 68Ω (OPT) C5 (OPT) GND GND VOUT VCC RFIN J1 SHDN RF LTC5509 R1 68Ω (OPT) VCC E1 VCC C2 0.1µF C3 100pF E5 GND 5509 AI01 5509f 6 LTC5509 U PACKAGE DESCRIPTIO SC6 Package 6-Lead Plastic SC70 (Reference LTC DWG # 05-08-1638) 0.47 MAX 0.65 REF 1.80 – 2.20 (NOTE 4) 1.16 REF 0.96 MIN 3.26 MAX 2.1 REF INDEX AREA (NOTE 6) 1.80 – 2.40 1.15 – 1.35 (NOTE 4) PIN 1 RECOMMENDED SOLDER PAD LAYOUT PER IPC CALCULATOR 0.65 BSC 0.15 – 0.30 6 PLCS (NOTE 3) 0.10 – 0.40 0.80 – 1.00 0.00 – 0.10 REF 1.00 MAX 0.10 – 0.30 0.10 – 0.18 (NOTE 3) SC6 SC70 0802 NOTE: 1. DIMENSIONS ARE IN MILLIMETERS 2. DRAWING NOT TO SCALE 3. DIMENSIONS ARE INCLUSIVE OF PLATING 4. DIMENSIONS ARE EXCLUSIVE OF MOLD FLASH AND METAL BURR 5. MOLD FLASH SHALL NOT EXCEED 0.254mm 6. DETAILS OF THE PIN 1 INDENTIFIER ARE OPTIONAL, BUT MUST BE LOCATED WITHIN THE INDEX AREA 7. EIAJ PACKAGE REFERENCE IS EIAJ SC-70 5509f Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights. 7 LTC5509 RELATED PARTS PART NUMBER DESCRIPTION COMMENTS RF Power Controllers LTC1757A RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1758 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC1957 RF Power Controller Multiband GSM/DCS/GPRS Mobile Phones LTC4400 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW LTC4401 SOT-23 RF PA Controller Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW LTC4403 RF Power Controller for EDGE/TDMA Multiband GSM/GPRS/EDGE Mobile Phones LT®5500 RF Front End Dual LNA gain Setting +13.5dB/–14dB at 2.5GHz, Double-Balanced Mixer, 1.8V ≤ VSUPPLY ≤ 5.25V LT5502 400MHz Quadrature Demodulator with RSSI 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range LT5503 1.2GHz to 2.7GHz Direct IQ Modulator and Up Converting Mixer 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth LT5504 800MHz to 2.7GHz RF Measuring Receiver 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply LTC5505 300MHz to 3.5GHz RF Power Detector >40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply LT5506 500MHz Quadrature IF Demodulator with VGA 1.8V to 5.25V Supply, 40MHz to 500MHz IF, –4dB to 57dB Linear Power Gain LTC5507 100kHz to 1GHz RF Power Detector 48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply LTC5508 300MHz to 7GHz RF Power Detector SC70 Package LT5511 High Signal Level Up Converting Mixer RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer LT5512 High Signal Level Down Converting Mixer DC-3GHz, 20dBm IIP3, Integrated LO Buffer 5509f 8 Linear Technology Corporation LT/TP 0203 2K • PRINTED IN USA 1630 McCarthy Blvd., Milpitas, CA 95035-7417 (408) 432-1900 ● FAX: (408) 434-0507 ● www.linear.com LINEAR TECHNOLOGY CORPORATION 2003