PHILIPS BUK111-50GL

Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
DESCRIPTION
Monolithic temperature and
overload protected logic level power
MOSFET in a 5 pin plastic SMD
envelope, intended as a low side
switch for automotive applications.
FEATURES
Vertical power DMOS output
stage
Low on-state resistance
Low operating supply current
Overtemperature protection
Overload protection against
short circuit load with
drain current limiting
Latched overload protection
reset by protection supply
Protection circuit condition
indicated by flag pin
Off-state detection
of open circuit load
indicated by flag pin
5 V logic compatible input level
Integral input resistors.
ESD protection on all pins
Over voltage clamping
BUK111-50GL
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Tj
RDS(ON)
Continuous drain source voltage
Continuous drain current
Continuous junction temperature
Drain-source on-state resistance
SYMBOL
PARAMETER
VPS
Protection supply voltage
MAX.
UNIT
50
12
150
93
V
A
˚C
mΩ
NOM.
UNIT
5
V
FUNCTIONAL BLOCK DIAGRAM
PROTECTION SUPPLY
FLAG
DRAIN
OC LOAD
O/V
DETECT
CLAMP
POWER
INPUT
RIG
MOSFET
LOGIC AND
PROTECTION
RIS
SOURCE
Fig.1. Elements of the TOPFET.
PINNING - SOT426
PIN
PIN CONFIGURATION
DESCRIPTION
1
input
2
flag
3
(connected to mb)
4
protection supply
5
source
D
mb
TOPFET
P
F
I
P
3
1 2
S
4 5
Fig. 2.
mb
SYMBOL
Fig. 3.
drain
September 1996
1
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VIS = 0 V
-
50
V
A
A
mA
mA
mA
Continuous voltage
VDS
Drain source voltage1
Continuous currents
ID
Drain current
VPS = 5 V; Tmb = 25 ˚C
-
II
IF
IP
Input current
Flag current
Protection supply current
VPS = 0 V; Tmb = 94 ˚C
-
-5
-5
-5
self limited
12
5
5
5
-
52
W
-55
-
175
150
260
˚C
˚C
˚C
MIN.
MAX.
UNIT
Thermal
Ptot
Total power dissipation
Tmb = 25 ˚C
Tstg
Tj
Tsold
Storage temperature
Junction temperature2
Lead temperature
continuous
during soldering
ESD LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
Electrostatic discharge capacitor
voltages
Human body model;
C = 100 pF; R = 1.5 kΩ
VC1
Drain to source
-
4.5
kV
VC2
Input, flag or protection to source
-
2
kV
OVERLOAD PROTECTION LIMITING VALUE
With the protection supply
connected, TOPFET can protect
itself from two types of overload short circuit load and
overtemperature.
SYMBOL
VPSP
For overload conditions an n-MOS
transistor turns on between the
gate and source to quickly
discharge the power MOSFET
gate capacitance.
PARAMETER
CONDITIONS
3
Protection supply voltage
for valid protection
The drain current is limited to
reduce dissipation in case of short
circuit load. Refer to OVERLOAD
CHARACTERISTICS.
MIN.
MAX.
UNIT
4.5
-
V
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
EDSM
Non-repetitive clamping energy
IDM = 6 A; Tmb = 25˚C
-
200
mJ
EDRM
Repetitive clamping energy
IDM = 3.1 A; VDD ≤ 20 V;
Tmb ≤ 120˚C; f = 250 Hz
-
20
mJ
1 Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2 A higher Tj is allowed as an overload condition but at the threshold Tj(TO) the over temperature trip operates to protect the switch.
3 The minimum supply voltage required for correct operation of the overload protection circuits.
September 1996
2
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
Rth j-mb
Junction to mounting base
-
-
-
2.38
K/W
Rth j-a
Junction to ambient
minimum footprint FR4 PCB
-
50
-
K/W
MIN.
TYP.
MAX.
UNIT
50
-
70
V
50
60
70
V
-
0.5
1
10
10
20
100
µA
µA
µA
-
70
135
93
165
mΩ
mΩ
MIN.
TYP.
MAX.
UNIT
OUTPUT CHARACTERISTICS
Tmb = 25 ˚C; VPS = 0 V unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Off-state
V(CL)DSS
Drain-source clamping voltage
ID = 10 mA;
-40˚C ≤ Tmb ≤ 150˚C
IDM = 0.75 A; tp ≤ 300 µs; δ ≤ 0.01
IDSS
RDS(ON)
1
Drain-source leakage current
VIS = 0 V;
VDS = 13 V
VDS = 50 V
Tmb = 125 ˚C; VDS = 40 V
On-state
tp ≤ 300 µs; δ ≤ 0.01
Drain-source on-resistance
IDM = 6 A; VIS = 4.4 V; VPS = 4.5 V
Tmb = 150 ˚C
INPUT CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Normal operation
VIS(TO)
Input threshold voltage
VDS = 13 V; VPS = 0 V; ID = 1 mA
-40˚C ≤ Tmb ≤ 150˚C
1
0.5
1.5
-
2
2.5
V
V
IIS
Input current
VIS = 5 V
-40˚C ≤ Tmb ≤ 150˚C
200
350
500
µA
V(CL)IS
Input clamping voltage
II = 1.5 mA
6
7.1
-
V
RIG
Internal series resistance
to gate of power MOSFET
-
1.5
-
kΩ
1.5
3.2
4
mA
MIN.
TYP.
MAX.
UNIT
Overload protection latched
IISL
Input current
VPS = 5 V; VIS = 5 V
REVERSE CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL
PARAMETER
CONDITIONS
2
-VDS
Reverse drain voltage
-ID = 6 A
-
0.8
-
V
-VIS
Reverse input voltage
-II = 5 mA
-
0.7
-
V
-VPS
Reverse protection pin voltage
-IP = 5 mA
-
0.7
-
V
-VFS
Reverse flag voltage
-IF = 5 mA
-
0.7
-
V
1 The drain current required for open circuit load detection is switched off when there is no protection supply, in order to ensure a low off-state
quiescent current. Refer to OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS.
2 Protection functions are disabled during reverse conduction.
September 1996
3
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
PROTECTION SUPPLY CHARACTERISTICS
Tmb = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
-
330
-
400
450
µA
µA
6
7.1
-
V
-40˚C ≤ Tmb ≤ 150˚C
1.5
2.1
-
3
V
V
-40˚C ≤ Tmb ≤ 150˚C
-
25
-
150
µs
µs
MIN.
TYP.
MAX.
UNIT
0.5
1.4
2
mA
0.4
1.1
-
mA
-
1.2
-
V
Normal operation or
protection latched
IPS, IPSL
Supply current
VPS = 4.5 V
V(CL)PS
Clamping voltage
IP = 1.5 mA
-40˚C ≤ Tmb ≤ 150˚C
Overload protection latched
VPSR
Reset voltage
t pr
Reset time
VPS = 0 V
OPEN CIRCUIT LOAD DETECTION CHARACTERISTICS
An open circuit load condition can be detected while the TOPFET is in the off-state.
-40˚C ≤ Tmb ≤ 150˚C; VPS = 5 V; VDS = 13 V unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
1
IDSP
Off-state drain current
VIS = 0 V
IDSF
Off-state drain threshold current VIS = 0 V; IF = 100 µA
VISF
Input threshold voltage2
IF = 100 µA; ID = 100 µA;
Tmb = 25 ˚C
TRUTH TABLE
For normal, open-circuit load and overload conditions or inadequate protection supply voltage.
CONDITION
PROTECTION
INPUT
FLAG
OUTPUT
Normal on-state
1
1
0
1
Normal off-state
1
0
0
0
Open circuit load
1
1
0
1
Open circuit load
1
0
1
0
Short circuit load
1
1
1
0
Over temperature
1
X
1
0
Low protection supply voltage
0
1
1
1
Low protection supply voltage
0
0
1
0
For protection ‘0’ equals low, ‘1’ equals high.
For input ‘0’ equals low, ‘1’ equals high, ‘X’ equals don’t care.
For flag ‘0’ equals low, ‘1’ equals open or high.
For output switch ‘0’ equals off, ‘1’ equals on.
1 The drain source current which flows when the protection supply is high and the input is low.
2 For open circuit load indication, VIS must be less than VISF.
September 1996
4
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
OVERLOAD CHARACTERISTICS
Tmb = 25 ˚C; VPS = 5 V unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
ID
Short circuit load protection
Drain current limiting
VIS = 5 V
VDS = 13 V
PD(TO)
EDSC
Overload power threshold1
Characteristic energy
for protection to operate
which determines trip time2
IDM
Peak drain current3
VDD = 13 V; RL ≤ 10 mΩ
-40˚C ≤ Tmb ≤ 150˚C
TYP.
MAX.
UNIT
12
24
36
A
-
100
200
-
W
mJ
-
45
-
A
150
185
215
˚C
MIN.
TYP.
MAX.
UNIT
-
0.7
-
V
-
-
0.9
V
-
10
-
mA
-
0.1
1
1
10
µA
µA
6
6.9
-
V
2.5
3
4
V
2
-
4
V
-
50
-
kΩ
Overtemperature protection
Tj(TO)
Threshold temperature
ID ≥ 1 A
FLAG CHARACTERISTICS
The flag is an open drain transistor which requires an external pull-up circuit.
Tmb = 25 ˚C unless otherwise specified
SYMBOL
VFSF
PARAMETER
CONDITIONS
Flag ‘low’
normal operation; VPS = 5 V
Flag voltage
IF = 100 µA
-40˚C ≤ Tmb ≤ 150˚C
Flag saturation current
VFS = 5 V
Flag ‘high’
overload or fault
IFSO
Flag leakage current
VFS = 5 V
V(CL)FS
Flag clamping voltage
IF = 100 µA
VPSF
Protection supply threshold
voltage4
IF = 100 µA; VDS = 5 V
IFSF
Tmb = 150˚C
-40˚C ≤ Tmb ≤ 150˚C
Application information
RF
Suitable external pull-up
resistance
VFF = 5 V
1 Refer to figure 15.
2 Trip time td sc ≈ EDSC / [ PD - PD(TO) ]. Refer also to figure 15.
3 For short circuit load connected after turn-on.
4 When VPS is less than VPSF the flag pin indicates low protection supply voltage. Refer to TRUTH TABLE.
September 1996
5
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
SWITCHING CHARACTERISTICS
Tmb = 25 ˚C
SYMBOL
PARAMETER
CONDITIONS
Resistive load
RL = 4 Ω; ID = 3 A
td on
Turn-on delay time
VIS: 0 V ⇒ 5 V
tr
Rise time
td off
Turn-off delay time
tf
Fall time
VIS: 5 V ⇒ 0 V
Inductive load
ID = 3 A; VDD = 13 V;
with freewheel diode
td on
Turn-on delay time
VIS: 0 V ⇒ 5 V
tr
Rise time
td off
Turn-off delay time
tf
Fall time
September 1996
VIS: 5 V ⇒ 0 V
6
MIN.
TYP.
MAX.
UNIT
-
0.6
-
µs
-
2.8
-
µs
-
3.5
-
µs
-
3.2
-
µs
-
0.9
-
µs
-
1.2
-
µs
-
6.7
-
µs
-
0.6
-
µs
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
VIN
VIS (input)
0V
VCC
VGS (internal)
0V
VDS(OFF)
SHORT
CIRCUIT
FAULT
VDS (output)
VDS(ON)
PROTECTION
RESET
VCC
PROTECTION
RESET
LOSS OF
PROT’N SUPPLY
VPS (protection supply)
0V
VCC
VFS (flag)
0V
NORMAL
FAULT
NORMAL
FAULT
NORMAL
OPERATION
CONDITION
OPERATION
CONDITION
OPERATION
Fig. 4. Waveforms for normal and fault conditions.
VIN
VIS (input)
0V
VCC
VGS (internal)
0V
VDS(OFF)
VDS (output)
VDS(ON)
VCC
VPS (protection supply)
0V
VCC
VFS (flag)
0V
NORMAL
OPEN
NORMAL
OPEN
NORMAL
OPERATION
LOAD
OPERATION
LOAD
OPERATION
Fig. 5. Waveforms for normal and open circuit load.
September 1996
7
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
120
BUK111-50GL
Normalised Power Derating
PD%
ID / A
50
BUK111-50GL
WITHOUT PROTECTION
110
VIS / V =
100
90
40
7
6
80
70
30
60
50
20
5
40
4
30
10
20
10
0
0
20
40
60
80
100
Tmb / C
120
0
140
Fig.6. Normalised limiting power dissipation.
PD% = 100⋅PD/PD(25˚C) = f(Tmb)
14
ID / A
3
0
5
10
VDS / V
15
20
Fig.9. Typical output characteristics, Tj = 25˚C.
ID = f(VDS); tp = 250 µs; VPS = 0 V; parameter VIS
BUK111-50GL
30
ID / A
BUK111-50GL
WITHOUT PROTECTION
12
VPS = 0 V
25
10
20
VPS = 5 V
8
15
CURRENT LIMITING
6
10
4
5
2
0
WITH PROTECTION
0
50
100
0
150
0
1
2
Tmb / C
Fig.7. Continuous limiting drain current.
ID = f(Tmb); conditions: VIS = 5 V; VPS = 5 V
25
ID / A
WITH PROTECTION
3
4
5
VDS / V
Fig.10. Typical on-state characteristics, Tj = 25˚C.
ID = f(VDS); VIS = 5 V; tp = 250 µs; parameter VPS
BUK111-50GL
VIS / V =
20
200
RDS(ON) / mOhm
BUK111-50GL
7
6
150
5
15
CURRENT LIMITING
4
TYP.
100
10
0
50
3
5
0
5
10
15
VDS / V
20
25
0
30
Fig.8. Typical output characteristics, Tj = 25˚C.
ID = f(VDS); tp = 250 µs; VPS = 5 V; parameter VIS
September 1996
0
1
2
3
4
VIS / V
5
6
7
8
Fig.11. Typical on-state resistance, Tj = 25˚C.
RDS(ON) = f(VIS); tp = 250 µs; parameter VIS
8
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
a
BUK111-50GL
Normalised RDS(ON) = f(Tj)
5
1 / [td sc / ms]
BUK111-50GL
RECIPROCAL TRIP TIME
1.5
4
3
1.0
intercept = PD(TO)
1/slope = EDSC
2
0.5
1
0
OVERLOAD DISSIPATION
-60 -40 -20
0
20
40 60
Tj / C
80
0
100 120 140
Fig.12. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25˚C = f(Tj); ID = 6 A; VIS ≥ 4.4 V
50
ID / A
200
400
600
PD / W
800
1000
1200
Fig.15. Typical reciprocal overload trip time.
1/td sc = f(PD); conditions: VPS = 5 V, Tmb = 25˚C
BUK111-50GL
500
VPS = 0 V
40
0
ESC(TO) / mJ
BUK111-50GL
400
30
300
20
200
TYP.
VPS = 5 V
10
0
100
0
1
2
3
4
VIS / V
5
6
7
0
8
Fig.13. Typical transfer characteristics, Tj = 25˚C.
ID = f(VIS) ; conditions: VDS = 10 V; tp = 250 µs
30
ID / A
VIS / V =
50
100
Tmb / C
150
200
Fig.16. Typical overload protection energy.
ESC(TO) = f(Tmb); VDD = 13 V; VPS = 5 V, VIS = 5 V
BUK111-50GL
25
0
210
7
Tj(TO) / C
BUK111-50GL
200
6
5
20
190
4.4
15
10
170
5
0
TYP.
180
4
4
5
6
VPS / V
7
150
8
3
4
5
6
7
8
VPS / V
Fig.14. Typical output current limiting, Tj = 25˚C.
ID = f(VPS); tp = 250 µs; VDS = 10 V; parameter VIS
September 1996
VPSP MIN.
160
VPSP MIN.
Fig.17. Typical overtemperature protection threshold.
Tj(TO) = f(VPS); VIS = 5 V; ID ≥ 1 A
9
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
2
II / mA
BUK111-50GL
BUK111-50GL
2
1.5
1.5
1
1
0.5
0.5
0
0
0
1
2
3
4
VIS / V
5
6
7
8
IISL / mA
0
BUK111-50GL
1
2
3
4
VPS / V
5
6
7
8
Fig.21. Typical protection supply characteristics.
IP = f(VPS); normal or overload operation; Tj = 25˚C
Fig.18. Typical DC input characteristic.
II = f(VIS) normal operation; Tj = 25˚C
8
IP / mA
BUK111-50GL
2
IF / mA
BUK111-50GL
7
1.5
6
5
1
4
3
0.5
2
1
0
0
0
1
2
3
4
VIS / V
5
6
7
8
Fig.19. Typical DC input characteristic, Tj = 25˚C.
IISL = f(VIS) overload protection latched; VPS = 5 V
0
1
2
3
4
VFS / V
5
6
7
8
Fig.22. Typical flag high characteristic, Tj = 25˚C.
IF = f(VFS); refer to TRUTH TABLE
VIS(TO) / V
200
IF / uA
BUK111-50GL
max.
2
150
typ.
100
min.
1
50
0
0
-60
-40
-20
0
20
40
60
Tj / C
80
100
120 140
Fig.20. Input threshold voltage.
VIS(TO) = f(Tj); conditions: ID = 1 mA; VDS = 5 V
September 1996
0
0.1
0.2
0.3
0.4
VFS / F
0.5
0.6
0.7
0.8
Fig.23. Typical flag low characteristic, Tj = 25˚C.
IF = f(VFS); VPS = 5 V; refer to TRUTH TABLE
10
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
20
IF / mA
BUK111-50GL
BUK111-50GL
VPSR / V
3
15
2.5
10
2
5
1.5
BUK111-50GL
typ.
0
0
1
2
3
4
5
VFS / V
6
7
8
1
-50
9
VFSF / V
50
100
150
200
Tj / C
Fig.27. Protection supply reset voltage.
VPSR = f(Tj)
Fig.24. Typical flag saturation current, Tj = 25˚C.
IF = f(VFS); flag ’low’; external RF = 0 kΩ; VPS = 5 V
1
0
BUK111-50GL
600
IP / uA
BUK111-50GL
500
0.8
400
0.6
300
0.4
200
0.2
100
0
-50
0
50
100
150
0
-50
200
0
50
Fig.25. Typical flag low voltage.
VFSF = f(Tj); VPS = 5 V; VIS = 5 V; VDS = 0 V
4
100
150
200
Tmb / C
Tj / C
VPSF / V
Fig.28. Typical protection supply current.
IP = f(Tj); VPS = 4.5 V
BUK111-50GL
40
IS / A
BUK111-50GL
30
3.5
typ.
3
20
2.5
10
2
-50
0
50
100
150
0
200
Tj / C
Fig.26. Protection supply threshold voltage.
VPSF = f(Tj); condition: VDS = 5 V
September 1996
0
0.2
0.4
0.6
0.8
VSD / V
1
1.2
1.4
Fig.29. Typical reverse diode current, Tj = 25˚C.
IS = f(VSD); conditions: VIS = 0 V; tp = 250 µs
11
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
ID / A
12
BUK111-50GL
BUK111-50GL
5
ID / mA
BUK111-50GL
OVERVOLTAGE CLAMPING
10
4
8
3
OPEN CIRCUIT LOAD DETECTION
6
2
4
VPS = 5 V
IDSP
VPS = 0 V
IDSS
30
40
VDS / V
50
1
2
IDSF
0
50
55
60
VIS / V
65
0
70
10
20
60
70
Fig.33. Typical off-state characteristics, Tj = 25˚C.
ID = f(VDS); VIS = 0 V; parameter VPS
Fig.30. Typical clamping characteristics, 25˚C.
ID = f(VDS); conditions: VIS = 0 V; tp ≤ 50 µs
EDSM%
120
0
2
IDSP & IDSF / mA
BUK111-50GL
110
100
IDSP
1.5
90
IDSF
80
70
1
60
50
40
0.5
30
20
10
0
0
0
20
40
60
80
Tmb / C
100
120
0
140
V(CL)DSP
2
VDS
VDD
+
6
8
IDSP & IDSF / mA
BUK111-50GL
VDD
1.5
L
ID
4
VPS / V
Fig.34. Typical open circuit load detect currents.
IDSP & IDSF = f(VPS); VIS = 0 V; VDS ≥ 5 V; Tj = 25˚C
Fig.31. Normalised limiting clamping energy.
EDSM% = f(Tmb); conditions: ID = 6 A
0
2
IDSP
VDS
+ VPS
0
VIS
-
D
RF
TOPFET
P
F
I
0
1
IDSF
-ID/100
D.U.T.
P
0.5
S
R 01
shunt
0
-50
50
100
150
200
Tmb / C
Fig.32. Clamping energy test circuit.
EDSM = 0.5 ⋅ LID2 ⋅ V(CL)DSS /(V(CL)DSS − VDD )
September 1996
0
Fig.35. Typical open circuit load detect currents.
IDSP & IDSF = f(Tj); VPS = 5 V; VIS = 0 V
12
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
1 mA
BUK111-50GL
Idss
10
BUK111-50GL
Zth / (K/W)
D=
100 uA
0.5
1
0.2
10 uA
0.1
typ.
0.05
0.1
1 uA
0.02
PD
tp
D=
tp
T
0
0.01
1E-07
100 nA
0
20
40
60
80
Tj / C
100
120
140
Fig.36. Typical off-state leakage current.
IDSS = f(Tj); Conditions: VDS = 40 V; VIS = 0 V.
100
ID & IDM / A
1E-05
1E-03
t/s
1E-01
1E+01
Fig.38. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
BUK111-50GL
ID
t
T
10 nF
Coss
BUK111-50GL
tp =
S/
)
ON
D
=V
10 us
S(
RD
100 us
10
DC
1 nF
1 ms
10 ms
Overload protection
characteristics not shown.
100 ms
1
1
10
VDS / V
100 pF
100
10
20
30
40
50
VDS / V
Fig.37. Safe operating area, VPS = 0 V, Tmb = 25˚C.
ID & IDM = f(VDS); IDM single pulse; parameter tp
September 1996
0
Fig.39. Typical output capacitance.
Coss = f(VDS); conditions: VIS = 0 V; f = 1 MHz
13
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
APPLICATION INFORMATION
From main control loop
Take input low
Wait typ 15 us
no
Return to main control loop
Is Flag High?
yes
Wait for cooling
Wait >= 1 min
RESET
Take prot’n supply low
Wait >= 150 us
Take prot’n supply high
Wait typ 15 us
yes
Is Flag High?
no
Take input high
Wait typ 15 us
yes
Is Flag High?
no
Take input low
Take input low
Record fault
Record Fault
Record Fault
S/C or over temp.
Open load
Low prot’n supply
Fig. 40. Possible fault diagnosis procedure.
September 1996
14
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
MECHANICAL DATA
Dimensions in mm
10.3 MAX
4.5 MAX
1.4 MAX
2.5
15.4
11 MAX
Net Mass: 1.5 g
0.85 MAX
(x4)
3.4
1.7
1.7
3.4
0.5
Fig.41. SOT426
mounting base connected to centre pin (cropped short)
MOUNTING INSTRUCTIONS
Dimensions in mm
11.5
9.0
17.5
3.4
1.7
1.7
3.8
1.3 (x4)
Fig.42. SOT426
soldering pattern for surface mounting.
September 1996
15
Rev 1.000
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK112-50GL
BUK111-50GL
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
September 1996
16
Rev 1.000