241NQ045R Vishay High Power Products Schottky Rectifier, 240 A FEATURES • 175 °C TJ operation Lug terminal cathode • Unique high power, HALF-PAK module • Replaces four parallel DO-5’s • Easier to mount and lower profile than DO-5’s HALF-PAK (D-67) Reverse • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Base anode • Low forward voltage drop • High frequency operation • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS directive 2002/95/EC • Designed and qualified for industrial level PRODUCT SUMMARY IF(AV) 240 A VR 45 V DESCRIPTION The 241NQ045R high current Schottky rectifier module has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 175 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL VALUES UNITS IF(AV) Rectangular waveform CHARACTERISTICS 240 A VRRM Range 45 V 25 000 A 0.59 V - 55 to 175 °C IFSM tp = 5 μs sine VF 240 Apk, TJ = 125 °C TJ Range VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage 241NQ045R UNITS 45 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 48 A, L = 0.28 mH 324 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 48 A Repetitive avalanche current Document Number: 93111 Revision: 18-Nov-09 50 % duty cycle at TC = 130 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied For technical questions, contact: [email protected] 240 25 000 A 3450 www.vishay.com 1 241NQ045R Vishay High Power Products Schottky Rectifier, 240 A ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 240 A Maximum forward voltage drop See fig. 1 VFM (1) TJ = 25 °C 480 A 240 A TJ = 125 °C 480 A Maximum reverse leakage current See fig. 2 IRM (1) TJ = 25 °C VR = Rated VR TJ = 125 °C Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS From top of terminal hole to mounting plane Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.69 0.82 0.59 V 0.72 20 180 mA 10 300 pF 5.0 nH 10 000 V/μs VALUES UNITS - 55 to 175 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case RthJC DC operation See fig. 4 0.20 Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased 0.15 Approximate weight Mounting torque Terminal torque minimum Non-lubricated threads g 0.9 oz. 58 (50) 58 (50) kgf · cm (lbf · in) 86 (75) maximum Case style www.vishay.com 2 25.6 40 (35) minimum maximum °C/W D-67 HALF-PAK Reverse For technical questions, contact: [email protected] Document Number: 93111 Revision: 18-Nov-09 241NQ045R Schottky Rectifier, 240 A Vishay High Power Products 10000 1000 T =175°C J 150°C 100 125°C 10 100°C 75°C 1 50°C .1 25°C .01 100 .001 0 5 10 15 20 25 30 35 40 45 ReverseVoltage- VR (V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage T =175°C J T =125°C J 10000 T = 25°C J 10 1 0 JunctionCapacitance- C (pF) T Instantaneous ForwardCurrent - IF (A) ReverseCurrent - I (mA) R 1000 .1 .2 .3 .4 .5 .6 .7 .8 T =25°C J 1000 0 .9 ForwardVoltageDrop- V (V) FM 10 20 30 40 50 ReverseVoltage- V (V) R Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Fig. 1 - Maximum Forward Voltage Drop Characteristics Thermal Impedance- ZthJC (°C/W) 1 .1 D=0.50 D=0.33 D=0.25 P DM t 1 t2 D=0.17 .01 D=0.08 Notes: 1. Dutyfactor D= t1/ t2 SinglePulse (Thermal Resistance) .001 .00001 .0001 .001 2. PeakT =P xZ +T J DM thJC C .01 .1 1 10 100 t , Rectangular PulseDuration(Seconds) 1 Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 93111 Revision: 18-Nov-09 For technical questions, contact: [email protected] www.vishay.com 3 241NQ045R Schottky Rectifier, 240 A Vishay High Power Products 220 200 241NQ RthJC (DC) =0.20°C/W 170 160 150 DC 140 180 AveragePower Loss- (W atts) AllowableCaseTemperature- (°C) 180 130 160 D=0.08 D=0.17 D=0.25 D=0.33 D=0.50 140 120 RMSLimit 100 80 DC 60 40 20 120 0 50 0 0 100 150 200 250 300 350 50 100 150 200 250 300 350 AverageForwardCurrent - IF(AV) (A) AverageForwardCurrent - I (A) F(AV) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics 100000 Non-Repetitive Surge Current - I FSM (A) At Any Rated Load Condition And With Rated VRRM Applied Following Surge 10000 1000 10 100 1000 10000 Square Wave Pulse Duration - t p (microsec) Fig. 7 - Maximum Non-Repetitive Surge Current L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com 4 www.vishay.com/doc?95378 For technical questions, contact: [email protected] Document Number: 93111 Revision: 18-Nov-09 Outline Dimensions Vishay Semiconductors D-67 HALF-PAK Reverse DIMENSIONS in millimeters (inches) 30.40 (1.197) 29.90 (1.177) 1/4-20 UNC-2B 19.69 (0.775) 18.42 (0.725) 4.11 (0.162) 3.86 (0.152) Ø 12.83 (0.505) Ø 12.57 (0.495) Ø 4.11 (0.162) Ø 3.86 (0.152) 19.18 (0.755) 18.92 (0.745) 15.11 (0.595) 14.61 (0.575) 13.97 (0.550) 13.72 (0.540) 39.62 (1.560) 38.61 (1.520) Document Number: 95378 Revision: 12-Nov-09 2.54 (0.100) 2.29 (0.090) For technical questions, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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