APM4532 Dual Enhancement Mode MOSFET (N-and P-Channel) Features • N-Channel 30V/5A, • Pin Description RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=60mΩ(typ.) @ VGS=4.5V P-Channel S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 -30V/-3.5A, RDS(ON)=85mΩ(typ.) @ VGS=-10V RDS(ON)=135mΩ(typ.) @ VGS=-4.5V • SO-8 Super High Dense Cell Design for Extremely D1 Low RDS(ON) • • D1 S2 Reliable and Rugged SO-8 Package G2 G1 Applications S1 • N-Channel MOSFET Power Management in Notebook Computer , D2 D2 P-Channel MOSFET Portable Equipment and Battery Powered Systems. Ordering and Marking Information APM4532 Package Code K : SO-8 Operation Junction Temp. Range C : -55 to 150°C Handling Code TR : Tape & Reel Handling Code Temp. Range Package Code APM4532 K : APM4532 XXXXX XXXXX - Date Code ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 1 www.anpec.com.tw APM4532 Absolute Maximum Ratings Symbol (TA = 25°C unless otherwise noted) Parameter N-Channel P-Channel VDSS Drain-Source Voltage 30 -30 VGSS Gate-Source Voltage ±25 ±25 Maximum Drain Current – Continuous 5 -3.5 IDM Maximum Drain Current – Pulsed 20 -20 TA=25°C 2 2 PD Maximum Power Dissipation TA=100°C 0.8 0.8 TJ Maximum Junction Temperature ID * TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient Unit V A W 150 °C -55 to 150 °C 62.5 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA = 25°C unless otherwise noted) APM4532 Unit Min. Typ. Max. Test Condition Static BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current VGS=0V , IDS=250µA a Notes a a -30 V 1 VDS=-24V , VGS=0V P-Ch -1 VDS=VGS , IDS=250µA N-Ch 1 1.5 2 VDS=VGS , IDS=-250µA P-Ch -1 -1.5 -2 VGS=±25V , VDS=0V Drain-Source On-state VGS=4.5V , IDS=4A Resistance VGS=-10V , IDS=-3.5A Diode Forward Voltage P-Ch N-Ch VGS=-4.5V , IDS=-2.5A VSD 30 VDS=24V , VGS=0V VGS=10V , IDS=5A RDS(ON) N-Ch N-Ch ±100 P-Ch ±100 N-Ch P-Ch 35 45 60 70 85 95 135 150 ISD=1.7A , VGS=0V N-Ch 0.7 1.3 ISD=-1.7A , VGS=0V P-Ch -0.7 -1.3 µA V nA mΩ V : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 2 www.anpec.com.tw APM4532 Electrical Characteristics (Cont.) Symbol Parameter (TA = 25°C unless otherwise noted) APM4532 Unit Min. Typ. Max. Test Condition a Dynamic Q g Qgs Qgd td(ON) T r td(OFF) T f Ciss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time N-Channel N-Ch 7 15 VDS=10V , IDS= 5A P-Ch 8 15 VGS=4.5V N-Ch 4.7 P-Channel P-Ch 2 VDS=-10V , IDS=-3.5A N-Ch 1.1 VGS=-4.5V P-Ch 1 N-Channel N-Ch 10 15 VDD=10V , IDS=1A , P-Ch 8 15 VGEN=4.5V , RG=10Ω N-Ch 8 20 P-Ch 7 20 P-Channel N-Ch 20 28 VDD=-10V , IDS=-1A , P-Ch 15 28 VGEN=-4.5V , RG=10Ω N-Ch 5 15 P-Ch 7 18 N-Ch 376 P-Ch 495 N-Ch 115 P-Ch 130 N-Ch 58 P-Ch 60 Input Capacitance VGS=0V Coss Output Capacitance VDS=15V Frequency=1.0MHz Crss nC Reverse Transfer Capacitance ns pF Notes a : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 3 www.anpec.com.tw APM4532 Typical Characteristics N-Channel Output Characteristics Transfer Characteristics 20 20.0 17.5 ID-Drain Current (A) ID-Drain Current (A) VGS=5,6,7,8,9,10V 15 V GS =4V 10 5 V GS =3V 0 0 1 2 3 4 15.0 12.5 10.0 7.5 TJ=125°C 5.0 TJ=-55°C TJ=25°C 2.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 0.10 1.50 0.09 1.25 RDS(ON)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) (Normalized) IDS=250uA 1.00 0.75 0.50 0.25 0.08 VGS=4.5V 0.07 0.06 0.05 0.04 V GS=10V 0.03 0.02 0.01 0.00 -50 -25 0 25 50 75 0.00 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 0 2 4 6 8 10 12 14 16 18 20 ID - Drain Current (A) 4 www.anpec.com.tw APM4532 Typical Characteristics (Cont.) N-Channel On-Resistance vs. Gate-to-Source Voltage 0.20 On-Resistance vs. Junction Temperature 2.0 ID=5A RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) 0.18 0.16 0.14 0.12 0.10 0.08 0.06 0.04 1.6 1.4 1.2 1.0 0.8 0.6 0.02 0.00 VGS=10V 1.8 ID=5A 2 3 4 5 6 7 8 9 0.4 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 50 100 125 150 Capacitance 10 700 Frequency=1MHz VDS=10 V 600 IDS= 5 A Capacitance (pF) 8 6 4 500 Ciss 400 300 200 Coss 2 100 0 75 TJ - Junction Temperature (°C) Gate Charge VGS-Gate-Source Voltage (V) 25 0 2 4 6 8 10 12 0 14 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 Crss 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 5 www.anpec.com.tw APM4532 Typical Characteristics (Cont.) N-Channel Source-Drain Diode Forward Voltage Single Pulse Power 30 20 10 TJ=150°C 1 Power (W) IS-Source Current (A) 25 TJ=25°C 20 15 10 5 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.01 1.4 0.1 VSD -Source-to-Drain Voltage (V) 1 10 30 Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 6 www.anpec.com.tw APM4532 Typical Characteristics P-Channel Output Characteristics Transfer Characteristics 20 20 15 -ID-Drain Current (A) -ID-Drain Current (A) 18 -VGS=6,7,8,9,10V -V GS=5V 10 -V GS=4V 5 TJ=25°C 14 TJ=125°C 12 TJ=-55°C 10 8 6 4 -V GS=3V 0 16 0 1 2 3 4 2 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 -VDS - Drain-to-Source Voltage (V) -VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature On-Resistance vs. Drain Current 1.50 0.250 RDS(ON)-On-Resistance (Ω) -VGS(th)-Threshold Voltage (V) (Normalized) -IDS=250uA 1.25 1.00 0.75 0.50 0.25 0.225 0.200 -VGS=4.5V 0.175 0.150 0.125 -VGS=10V 0.100 0.075 0.050 0.025 0.00 -50 -25 0 25 50 75 0.000 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 0 1 2 3 4 5 6 7 8 9 10 -ID - Drain Current (A) 7 www.anpec.com.tw APM4532 Typical Characteristics (Cont.) P-Channel On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 0.30 1.8 RDS(ON)-On-Resistance (Ω) (Normalized) RDS(ON)-On-Resistance (Ω) -ID=3.5A 0.25 0.20 0.15 0.10 0.05 0.00 1.6 -VGS=10V -ID=3.5A 1.4 1.2 1.0 0.8 0.6 2 3 4 5 6 7 8 9 0.4 -50 10 -VGS - Gate-to-Source Voltage (V) -25 0 75 100 125 150 Capacitance 10 800 9 -VDS=10 V 8 -IDS= 3.5 A Frequency=1MHz 700 7 Capacitance (pF) -VGS-Gate-Source Voltage (V) 50 TJ - Junction Temperature (°C) Gate Charge 6 5 4 3 2 600 Ciss 500 400 300 200 Coss Crss 100 1 0 25 0 0 1 2 3 4 5 6 7 8 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 0 5 10 15 20 -VDS - Drain-to-Source Voltage (V) 8 www.anpec.com.tw APM4532 Typical Characteristics (Cont.) P-Channel Source-Drain Diode Forward Voltage Single Pulse Power 20 30 25 Power (W) -IS-Source Current (A) 10 1 TJ=150°C TJ=25°C 20 15 10 5 0.1 0 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 -VSD -Source-to-Drain Voltage (V) 1 10 30 Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle=0.5 D=0.2 D=0.1 0.1 D=0.05 D=0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=62.5°C/W 3.TJM-TA=PDMZthJA SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 9 www.anpec.com.tw APM4532 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 1. 27B S C 0. 50B S C 8° 8° 10 www.anpec.com.tw APM4532 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) temperature Reference JEDEC Standard J-STD-020A APRIL 1999 Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 11 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4532 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 12 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM4532 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2002 13 www.anpec.com.tw