DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D050 BA481 UHF mixer diode Product specification File under Discrete Semiconductors, SC01 1996 Mar 19 Philips Semiconductors Product specification UHF mixer diode BA481 FEATURES DESCRIPTION • Low forward voltage Planar Schottky barrier diode encapsulated in a hermetically-sealed subminiature SOD68 (DO-34) glass package. The diode is suitable for mounting on a 2 E (5.08 mm) pitch. • Hermetically-sealed leaded glass package • Low diode capacitance. APPLICATIONS k handbook, halfpage a • UHF mixer • Sampling circuits • Modulators • Phase detection. MAM193 Cathode indicated by a grey band. Fig.1 Simplified outline (SOD68; DO-34), and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER MIN. MAX. UNIT VR continuous reverse voltage − 4 V IF continuous forward current − 30 mA Tstg storage temperature −65 +125 °C Tj junction temperature − 100 °C 1996 Mar 19 2 Philips Semiconductors Product specification UHF mixer diode BA481 ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL VF IR PARAMETER CONDITIONS forward voltage MAX. UNIT see Fig.2 reverse current IF = 1 mA 450 mV IF = 10 mA 600 mV 10 µA VR = 4 V; see Fig.3 VR = 4 V; Tamb = 60 °C; see Fig.3 100 µA rs series resistance f = 1 kHz; IF = 5 mA 13 Ω F noise figure f = 900 MHz; note 1 8 dB Cd diode capacitance f = 1 MHz; VR = 0 V; see Fig.4 1.1 pF Note 1. The local oscillator is adjusted for a diode current of 2 mA. IF amplifier noise Fif = 1.5 dB; f = 35 MHz. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 Note 1. Refer to SOD68 standard mounting conditions. 1996 Mar 19 3 VALUE UNIT 320 KW Philips Semiconductors Product specification UHF mixer diode BA481 GRAPHICAL DATA MGC684 2 10halfpage handbook, MGC685 4 10halfpage handbook, IR (nA) I F (mA) 10 (1) (2) (3) (4) 10 (1) 3 (2) 10 2 (3) 10 1 (4) 1 10 −1 (1) (2) (3) (4) 0 0.2 0.4 0.6 VF (V) 10 −1 0.8 (1) (2) (3) (4) MGC683 Cd (pF) 0.75 0.50 0.25 0 1 2 3 VR (V) 4 f = 1 MHz. Fig.4 Diode capacitance as a function of reverse voltage; typical values. 1996 Mar 19 2 3 4 Tamb = 100 °C. Tamb = 60 °C. Tamb = 25 °C. Tamb = −40 °C. Fig.3 Forward current as a function of forward voltage; typical values. 1.00 1 VR (V) Tamb = 100 °C. Tamb = 60 °C. Tamb = 25 °C. Tamb = −40 °C. Fig.2 0 4 Reverse current as a function of reverse voltage; typical values. Philips Semiconductors Product specification UHF mixer diode BA481 PACKAGE OUTLINE handbook, full pagewidth 0.55 max 1.6 max 25.4 min 3.04 max 25.4 min MSA212 - 1 Dimensions in mm. The grey marking band indicates the cathode. Fig.5 SOD68 (DO-34). DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Mar 19 5