BAS85 Vishay Telefunken Schottky Barrier Diode Features D Integrated protection ring against static discharge D Very low forward voltage Applications 94 9371 Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Junction temperature Storage temperature range Test Conditions Type tp=10 ms tp≤1s VRWM=25V Symbol VR IFSM IFRM IF IFAV Tj Tstg Value 30 5 300 200 200 125 –65...+150 Unit V A mA mA mA °C °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions on PC board 50mmx50mmx1.6mm Symbol RthJA Value 320 Unit K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage g Reverse current Diode capacitance Document Number 85510 Rev. 3, 01-Apr-99 Test Conditions IF=0.1mA IF=1mA IF=10mA IF=30mA IF=100mA VR=25V, tp=300ms VR=1V, f=1MHz Type Symbol VF VF VF VF VF IR CD Min Typ Max 240 320 400 500 800 2.3 10 Unit mV mV mV mV mV mA pF www.vishay.de • FaxBack +1-408-970-5600 1 (4) BAS85 Vishay Telefunken Characteristics (Tj = 25_C unless otherwise specified) PR – Reverse Power Dissipation ( mW ) 200 1000 180 VR = 30 V IF – Forward Current ( A ) 160 140 PR–Limit @100%VR 120 RthJA= 540K/W 100 80 PR–Limit @80%VR 60 40 Tj = 150°C 100 Tj = 25°C 10 1 20 0.1 0 25 50 75 100 125 150 Tj – Junction Temperature ( °C ) 15822 0 Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature 1.0 1.5 Figure 3. Forward Current vs. Forward Voltage 10 1000 VR = VRRM f=1MHz 9 CD – Diode Capacitance ( pF ) I R – Reverse Current ( mA ) 0.5 VF – Forward Voltage ( V ) 15824 100 10 8 7 6 5 4 3 2 1 1 25 15823 50 75 100 125 Tj – Junction Temperature ( °C ) Figure 2. Reverse Current vs. Junction Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (4) 0 0.1 150 15825 1.0 10.0 100.0 VR – Reverse Voltage ( V ) Figure 4. Diode Capacitance vs. Reverse Voltage Document Number 85510 Rev. 3, 01-April-99 BAS85 Vishay Telefunken Dimensions in mm 96 12070 Document Number 85510 Rev. 3, 01-Apr-99 www.vishay.de • FaxBack +1-408-970-5600 3 (4) BAS85 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 85510 Rev. 3, 01-April-99