MOTOROLA BS170

Order this document
by BS170/D
SEMICONDUCTOR TECHNICAL DATA
N–Channel — Enhancement
1 DRAIN
2
GATE

3 SOURCE
MAXIMUM RATINGS
1
Rating
Drain – Source Voltage
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 µs)
Symbol
Value
Unit
VDS
60
Vdc
3
CASE 29–04, STYLE 30
TO–92 (TO–226AA)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current(1)
ID
0.5
Adc
Total Device Dissipation @ TA = 25°C
PD
350
mW
TJ, Tstg
– 55 to +150
°C
Operating and Storage Junction
Temperature Range
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
IGSS
—
0.01
10
nAdc
V(BR)DSS
60
90
—
Vdc
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(Th)
0.8
2.0
3.0
Vdc
Static Drain–Source On Resistance
(VGS = 10 Vdc, ID = 200 mAdc)
rDS(on)
—
1.8
5.0
Ω
ID(off)
—
—
0.5
µA
gfs
—
200
—
mmhos
Ciss
—
—
60
pF
Turn–On Time
(ID = 0.2 Adc) See Figure 1
ton
—
4.0
10
ns
Turn–Off Time
(ID = 0.2 Adc) See Figure 1
toff
—
4.0
10
ns
OFF CHARACTERISTICS
Gate Reverse Current
(VGS = 15 Vdc, VDS = 0)
Drain–Source Breakdown Voltage
(VGS = 0, ID = 100 µAdc)
ON CHARACTERISTICS(2)
Drain Cutoff Current
(VDS = 25 Vdc, VGS = 0 Vdc)
Forward Transconductance
(VDS = 10 Vdc, ID = 250 mAdc)
SMALL– SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 10 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
300 µs, Duty Cycle
2.0%.
v
v
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
 Motorola, Inc. 1997
1
BS170
RESISTIVE SWITCHING
+25 V
ton
Vin
PULSE GENERATOR
50 Ω
125 Ω
20 dB
50 Ω ATTENUATOR
40 pF
50 Ω
1.0 MΩ
TO SAMPLING SCOPE
50 Ω INPUT
Vout
OUTPUT
V
INVERTED out
toff
90%
10%
90%
50%
10%
INPUT
Vin
(Vin Amplititude 10 Volts)
Figure 2. Switching Waveforms
Figure 1. Switching Test Circuit
2.0
VDS = VGS
ID = 1.0 mA
I D(on) , DRAIN CURRENT (AMPS)
VGS(th), THRESHOLD VOLTAGE
2.0
1.6
PULSE
WIDTH
1.2
0.8
0.4
VGS = 10 V
1.6
9.0 V
8.0 V
1.2
7.0 V
6.0 V
0.8
5.0 V
0.4
4.0 V
0
50
100
0
50
TJ, JUNCTION TEMPERATURE (°C)
0
150
Figure 3. VGS(th) Normalized versus Temperature
100
VGS = 10 V
9.0 V
1.6
VGS = 0 V
80
8.0 V
1.2
7.0 V
0.8
6.0 V
0.4
4.0
Figure 4. On–Region Characteristics
C, CAPACITANCE (pF)
I D(on) , DRAIN CURRENT (AMPS)
2.0
1.0
2.0
3.0
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
60
40
Ciss
20
5.0 V
Coss
4.0 V
Crss
0
20
10
30
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
Figure 5. Output Characteristics
2
40
0
10
20
30
40
50
60
VDS, DRAIN – TO–SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance versus
Drain–To–Source Voltage
Motorola Small–Signal Transistors, FETs and Diodes Device Data
BS170
PACKAGE DIMENSIONS
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
B
R
P
L
F
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X–X
1
N
N
CASE 029–04
(TO–226AA)
ISSUE AD
Motorola Small–Signal Transistors, FETs and Diodes Device Data
DIM
A
B
C
D
F
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.022
0.016
0.019
0.045
0.055
0.095
0.105
0.015
0.020
0.500
–––
0.250
–––
0.080
0.105
–––
0.100
0.115
–––
0.135
–––
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.41
0.55
0.41
0.48
1.15
1.39
2.42
2.66
0.39
0.50
12.70
–––
6.35
–––
2.04
2.66
–––
2.54
2.93
–––
3.43
–––
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
3
BS170
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”
must be validated for each customer application by customer’s technical experts. Motorola does not convey any license under its patent rights nor the rights of
others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other
applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury
or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
Motorola was negligent regarding the design or manufacture of the part. Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal
Opportunity/Affirmative Action Employer.
Mfax is a trademark of Motorola, Inc.
How to reach us:
USA / EUROPE / Locations Not Listed: Motorola Literature Distribution;
P.O. Box 5405, Denver, Colorado 80217. 303–675–2140 or 1–800–441–2447
JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, 6F Seibu–Butsuryu–Center,
3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 81–3–3521–8315
Mfax: [email protected]l.sps.mot.com – TOUCHTONE 602–244–6609
ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,
– US & Canada ONLY 1–800–774–1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298
INTERNET: http://motorola.com/sps
4
◊
Motorola Small–Signal Transistors, FETs and Diodes DeviceBS170/D
Data