HITFETÒ BTS 3410 G Smart Dual Lowside Power Switch Features Product Summary · Logic Level Input Drain source voltage VDS · Input Protection (ESD) On-state resistance RDS(on) 200 mW · Thermal shutdown with Nominal load current ID(Nom) 1.3 A Clamping energy EAS 150 mJ auto restart 42 V · Overload protection · Short circuit protection · Overvoltage protection · Current limitation · Analog driving possible Application · All kinds of resistive, inductive and capacitive loads in switching or linear applications · µC compatible power switch for 12 V DC applications · Replaces electromechanical relays and discrete circuits General Description N channel vertical power FET in Smart SIPMOS Ò technology. Fully protected by embedded protection functions. Vbb M HITFET â In1 Pin 2 Drain1 Pin 7and 8 Logic Channel 1 Pin 1 Source1 Drain2 In2 Pin 4 Pin 5and 6 Logic Channel 2 Pin 3 Source2 Complete product spectrum and additional information http://www.infineon.com/hitfet Page 1 2004-03-05 BTS 3410 G Pin Description Pin Configuration (Top view) Pin Symbol Function 1 S1 Source Channel 1 2 IN1 Input Channel 1 3 S2 4 S1 1· 8 D1 Source Channel 2 IN1 2 7 D1 IN2 Input Channel 2 S2 3 6 D2 5 D2 Drain Channel 2 IN2 4 5 D2 6 D2 Drain Channel 2 7 D1 Drain Channel 1 8 D1 Drain Channel 1 HITFET Drain1 â Current Limitation In1 P-DSO-8-7 OvervoltageProtection Pin 7, 8 Vbb Gate-Driving Unit Pin 2 M ESD Overload Protection Over- temperature Protection Short circuit Protection Pin 1 Source1 Drain2 Current Limitation In2 OvervoltageProtection Pin 5, 6 Vbb Gate-Driving Unit Pin 4 M ESD Overload Protection Over- temperature Protection Short circuit Protection Pin 3 Source2 Page 2 2004-03-05 BTS 3410 G Maximum Ratings at Tj = 25°C, unless otherwise specified Parameter Symbol Drain source voltage VDS Drain source voltage for short circuit protection 1) VDS(SC) Tj = -40...150 °C Continuous input current1) Value Unit 42 V 18 IIN mA -0.2V £ VIN £ 10V no limit VIN < -0.2V or VIN > 10V | IIN | £ 2 °C Operating temperature Tj -40 ...+150 Storage temperature Tstg -55 ... +150 Power dissipation2)5) Ptot 0.8 W EAS 150 mJ VLD 50 V 2 kV TA = 85 °C Unclamped single pulse inductive energy1) each channel Load dump protection VLoadDump1)3) = VA + VS VIN = 0 and 10 V, td = 400 ms, RI = 2 W, RL = 9 W, VA = 13.5 V Electrostatic discharge voltage1) (Human Body Model) VESD according to Jedec norm EIA/JESD22-A114-B, Section 4 MSL1 Jedec humidity category,J-STD-20-B IEC climatic category; DIN EN 60068-1 40/150/56 Thermal resistance junction - ambient: per channel @ 6 cm 2 cooling area2) RthJA K/W one channel on 100 both channels on 160 1not subject to production test, specified by design 2 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for drain connection. PCB mounted vertical without blown air. 3V Loaddump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 5 not subject to production test, calculated by R THJA and Rds(on) Page 3 2004-03-05 BTS 3410 G Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. 42 - 55 V - 1.5 10 µA Characteristics Drain source clamp voltage VDS(AZ) Tj = - 40 ...+ 150, ID = 10 mA Off-state drain current Tj = -40 ... +150°C IDSS VDS = 32 V, VIN = 0 V Input threshold voltage V VIN(th) ID = 0.3 mA, Tj = 25 °C 1.3 1.7 2.2 ID = 0.3 mA, Tj = 150 °C 0.8 - - - 10 30 On state input current IIN(on) On-state resistance RDS(on) mW VIN = 5 V, ID = 1.4 A, Tj = 25 °C - 190 240 VIN = 5 V, ID = 1.4 A, Tj = 150 °C - 350 480 VIN = 10 V, I D = 1.4 A, Tj = 25 °C - 150 200 VIN = 10 V, I D = 1.4 A, Tj = 150 °C - 280 400 On-state resistance µA RDS(on) Nominal load current per channel5) A ID(Nom) VDS = 0.5 V, Tj < 150°C, VIN = 10 V, T A = 85 °C, one channel on both channels on Current limit (active if VDS>2.5 V)2) ID(lim) 1.3 1.65 - 1 1.3 - 5 7.5 10 VIN = 10 V, VDS = 12 V, t m = 200 µs 1not subject to production test, specified by design 2Device switched on into existing short circuit (see diagram Determination of I D(lim) ). If the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 µs. 5 not subject to production test, calculated by R THJA and Rds(on) Page 4 2004-03-05 BTS 3410 G Electrical Characteristics Parameter Symbol at Tj = 25°C, unless otherwise specified Values Unit min. typ. max. ton - 45 100 RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Turn-off time VIN to 10% ID: toff - 60 100 RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Slew rate on 70 to 50% Vbb: -dVDS/dt on - 0.4 1.5 RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V Slew rate off 50 to 70% Vbb: dVDS/dtoff - 0.6 1.5 150 175 - °C - 10 - K µA Dynamic Characteristics Turn-on time VIN to 90% ID : µs V/µs RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V Protection Functions1) Thermal overload trip temperature Tjt Thermal hysteresis2) DTjt Input current protection mode IIN(Prot) 25 50 300 Input current protection mode IIN(Prot) - 40 300 EAS 150 - - mJ VSD - 1 - V Tj = 150 °C Unclamped single pulse inductive energy2) each channel ID = 0.9 A, Tj = 25 °C, Vbb = 12 V Inverse Diode Inverse diode forward voltage IF = 7 A, tm = 250 µs, VIN = 0 V, tP = 300 µs 1Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 2not subject to production test, specified by design Page 5 2004-03-05 BTS 3410 G Block diagram Inductive and overvoltage output clamp Terms RL V I IN D Z D IN ID VDS Vbb HITFET VIN S S HITFET Short circuit behaviour Input circuit (ESD protection) Gate Drive Input VIN Source/ Ground IIN IDS Tj Page 6 2004-03-05 BTS 3410 G 1 Overall maximum allowable power 2 On-state resistance dissipation; P tot = f(TS) resp. P tot = f(TA) @ R thJA=80 K/W RON = f(Tj ); ID=1.4A; V IN=10V 3 500 mW W max. T Ptot 2 T RDS(on) 400 S 350 300 typ. A 1.5 250 200 1 150 100 0.5 50 0 -50 -25 0 25 50 75 100 °C Tj 0 -50 150 -25 0 25 50 75 100 125 °C 3 On-state resistance 4 Typ. input threshold voltage RON = f(T j); ID= 1.4A; V IN=5V VIN(th) = f(Tj); ID = 0.15 mA; VDS = 12V 500 2 max. mW V 400 1.6 typ. 350 300 VGS(th) RDS(on) 175 Tj 1.4 1.2 250 1 200 0.8 150 0.6 100 0.4 50 0.2 0 -50 -25 0 25 50 75 100 125 °C 0 -50 175 Tj -25 0 25 50 75 100 °C 150 Tj Page 7 2004-03-05 BTS 3410 G 5 Typ. transfer characteristics 6 Typ. short circuit current I D=f(V IN); VDS=12V; T Jstart=25°C ID(lim) = f(Tj); VDS=12V Parameter: VIN 10 8 A A 8 7 ID(lim) ID 6 5 6 Vin=10V 5 4 5V 4 3 3 2 2 1 0 0 1 1 2 3 4 5 6 7 8 V 0 -50 10 -25 0 25 50 75 100 125 °C VIN 7 Typ. output characteristics 8 Typ. off-state drain current I D=f(V DS); T Jstart=25°C Parameter: VIN IDSS = f(Tj) 10 Vin=10V A 175 Tj 11 µA 7V max. 9 8 6V 8 5V 6 IDSS ID 7 4V 7 6 5 5 4 4 3 3 3V 2 2 1 0 0 typ. 1 1 2 3 4 V 0 -50 6 VDS -25 0 25 50 75 100 125 °C 175 Tj Page 8 2004-03-05 BTS 3410 G 9 Typ. overload current 10 Typ. transient thermal impedance ID(lim) = f(t), Vbb=12 V, no heatsink ZthJA=f(tp) @ 6 cm2 cooling area Parameter: Tjstart Parameter: D=tp/T ; one channel on 10 2 12 K/W A -40°C 8 25°C ZthJA ID(lim) 10 1 85°C 10 0 6 150°C 4 10 -1 2 0 0 0.5 1 1.5 2 2.5 3 ms D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0 10 -2 -6 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 10 4 s 10 4 10 4 tP t 11 Determination of ID(lim) 12 Typ. transient thermal impedance ID(lim) = f(t); t m = 200µs ZthJA=f(tp) @ 6 cm2 cooling area Parameter: TJstart Parameter: D=tp/T ; both channels on 10 3 12 K/W A -40°C 8 ZthJA ID(lim) 10 2 25°C 10 1 85°C 6 10 0 4 150°C 10 -1 2 0 0 0.1 0.2 0.3 0.4 ms 0.55 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 D=0 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s tP t Page 9 2004-03-05 BTS 3410 G Package Ordering Code P-DSO-8-7 Q67060-S6125-A101 1.27 0.1 0.41 +0.1 -0.05 .01 0.2 +0.05 -0 C 0.2 M A C x8 8 5 Index Marking 1 4 5 -0.21) 8˚ MAX. 4 -0.21) 1.75 MAX. 0.1 MIN. (1.5) 0.33 ±0.08 x 45˚ 0.64 ±0.25 6 ±0.2 A Index Marking (Chamfer) 1) Does not include plastic or metal protrusion of 0.15 max. per side Page 10 2004-03-05 BTS 3410G Revision History : Previous version : 2004-03-05 2003-04-22 Page Subjects (major changes since last revision) 3, 6 Footnote 2 extended to Vin<0V, Etot and ∆TjT 3, 4 Footnote 5 implemented to Ptot and ID(nom) 3 ESD test condition changed from MIL STD 883D, methode 3015.7 and EOS/ESD assn. standard S5.1-1993 to Jedec Norm EIA/JESD22-A114-B, Section 4 3 Humidity category classification changed from DIN 40040 value E to J-STD-20-B value MSL1 3 climatic category changed from DIN IEC 68-1 to DIN EN 60068-1 4 VIN(th) test conditions from ID=0.15mA to ID=0.3mA For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com HITFET®, SIPMOS® are registered trademarks of Infineon Technologies AG. Edition 2004-02-02 Published by Infineon Technologies AG, St.-Martin-Strasse 53, D-81541 München, Germany © Infineon Technologies AG 2001 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as a guarantee of characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2004-03-05