2SC3851/3851A Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1488/A) A V(BR)CEO IB 1 A hFE VCE=4V, IC=1A 60min 80min 40 to320 PC 25(Tc=25°C) W VCE(sat) IC=2A, IB=0.2A 0.5max V Tj 150 °C fT VCE=12V, IE=–0.2A 15typ MHz –55 to +150 °C COB VCB=10V, f=1MHz 60typ pF Tstg V ø3.3±0.2 a b 3.9 IC=25mA 1.35±0.15 1.35±0.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 12 6 2 10 –5 200 –200 0.2typ 1typ 0.3typ 10mA 1 5mA 0 0 1 2 3 4 5 3A 0 0.005 0.01 0.05 0.1 0.5 (V C E =4V) Typ 100 50 1 Transient Thermal Resistance DC Curr ent Gain h FE 125˚C 25˚ C 100 – 3 0 ˚C 50 20 0.01 4 0.05 0.1 0.5 1 f T – I E Characteristics (Typical) 10 100 10 m s s DC at si nk –4 he –0.5 –1 ite Without Heatsink Natural Cooling fin 0.5 20 In 1 ith Collector Cu rre nt I C (A) 10 0m W 0 1000 s 0.1 76 1 P c – T a Derating 10 Without Heatsink 0.05 –0.1 1 30 30 Emitter Current I E (A) 5 0.5 10 5 10 1.2 Time t(ms) 1m Typ 1.0 θ j-a – t Characteristics Safe Operating Area (Single Pulse) (V C E =12V) –0.005 0.5 Collector Current I C (A) Collector Current I C (A) 20 4 Ma xim um Powe r Dissipat io n P C (W) DC Curr ent Gain h FE 500 40 0 Base-Emittor Voltage V B E (V) h FE – I C Temperature Characteristics (Typical) 500 Cu t-off Fr eque ncy f T ( MH Z ) 0 1 Base Current I B (A) (V C E =4V) 0.5 p) I C =1 A 6 h FE – I C Characteristics (Typical) 0.1 Tem 1 2A Collector-Emitter Voltage V C E (V) 20 0.01 2 se 0.5 3 (Ca 20mA 2 1.0 ˚C 30mA θ j - a (˚C /W) Collector Current I C (A) 40mA 3 (V C E =4V) 4 125 IB =7 50mA I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) Collector-Emitter Saturation Voltage V CE(s a t) (V ) 0m A 60 m A Weight : Approx 2.0g a. Type No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) 4 2.4±0.2 2.2±0.2 mp) 4 e Te IC V µA 100max VEB=6V (Cas IEBO –30˚C V ) 6 100 emp VEBO 80 0.8±0.2 VCB= 4.0±0.2 µA 100max ICBO se T V 4.2±0.2 2.8 c0.5 (Ca 80 10.1±0.2 25˚C V 60 Unit 8.4±0.2 80 2SC3851 2SC3851A Conditions Symbol 16.9±0.3 VCEO Unit 100 13.0min VCBO External Dimensions FM20(TO220F) (Ta=25°C) ±0.2 ■Electrical Characteristics ■Absolute maximum ratings (Ta=25°C) Symbol 2SC3851 2SC3851A Application : Audio and PPC High Voltage Power Supply, and General Purpose 3 5 10 50 Collector-Emitter Voltage V C E (V) 80 0 0 50 100 Ambient Temperature Ta(˚C) 150