Power Transistors 2SD2530 Silicon NPN triple diffusion planer type Darlington Unit: mm 4.2±0.2 For power amplification ■ Absolute Maximum Ratings TC = 25°C Parameter Rating Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 5 V Peak collector current ICP 10 A Collector current IC 5 A PC 15 W TC = 25°C Ta = 25°C 90° C 1.0 2.25±0.2 2.5±0.1 0.65±0.1 0.65±0.1 0.35±0.1 1.05±0.1 0.55±0.1 0.55±0.1 Symbol Collector power dissipation 1.2±0.1 1.48±0.2 18.0±0.5 Solder Dip • High forward current transfer ratio hFE • Allowing supply with the radial taping • Low collector to emitter saturation voltage VCE(sat): < 2.5 V 5.0±0.1 1.0±0.2 13.0±0.2 ■ Features 10.0±0.2 2.5±0.2 2.5±0.2 1 2 3 1: Base 2: Collector 3: Emitter MT-4 Package Internal Connection 2 C Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C B E ■ Electrical Characteristics TC = 25°C ± 2°C Parameter Collector cutoff current Symbol Max Unit ICBO VCB = 100 V, IE = 0 Conditions Min Typ 100 µA ICEO VCE = 80 V, IB = 0 100 µA Emitter cutoff current IEBO VEB = 5 V, IC = 0 5 mA Collector to emitter voltage VCEO IC = 10 mA, IB = 0 100 Forward current transfer ratio hFE1 VCE = 4 V, IC = 2 A 2 000 500 V 15 000 hFE2 VCE = 4 V, IC = 4 A Collector to emitter saturation voltage VCE(sat) IC = 2 A, IB = 2 mA 1.5 V IC = 4 A, IB = 16 mA 2.5 V Base to emitter saturation voltage VBE(sat) IC = 4 A, IB = 16 mA 2.5 V Transition frequency fT VCE = 10 V, IC = 0.5 A, f = 1 MHz Turn-on time ton IC = 4 A, IB1 = 16 mA, IB2 = −16 mA Storage time tstg VCC = 50 V Fall time tf 20 MHz 0.27 µs 2.9 µs 1.0 µs 1