Ordering number:EN3965 FC150 PNP/NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions · Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. · The FC150 is formed with two chips, being equivalent to the 2SA1813/2SC4413, placed in one package. · Adoption of FBET process. · High DC current gain. · Hgih VEBO. Electrical Connection unit:mm 2067 [FC150] E1:Emitter 1 B1:Base 1 C2:Collector 2 E2:Emitter 2 B2:Base 2 C1:Collector 1 TR1=PNP TR2=NPN SANYO:CP6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (–30)60 V Collector-to-Emitter Voltage VCEO VEBO (–25)50 V Emitter-to-Base Voltage Collector Current Collector Current (Pulse) (–)15 V IC (–150)100 mA ICP (–300)200 mA Base Current IB Collector Dissipation Total Dissipation PC PT Junction Temperature Tj Storage Temperature Tstg (–30)20 mA 200 mW 300 mW 150 ˚C –55 to +150 ˚C 1 unit Electrical Characteristics at Ta = 25˚C Parameter Symbol Conditons Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain VCE=(–)5V, IC=(–)1mA Gain-Bandwidth Product hFE fT Output Capacitance Cob VCB=(–)10V, f=1MHz C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage VCE(sat) VBE(sat) Ratings min typ max VCB=(–20V)40V, IE=0 VEB=(–)10V, IC=0 (500)800 VCE=(–)10V, IC=(–)10mA Unit –0.1 µA –0.1 µA (800)1500 (1200)3200 (210)200 MHz (2.6)1.5 pF IC=(–)50mA, IB=(–)1mA (–0.15)0.1 (–)0.3 V IC=(–)50mA, IB=(–)1mA (–0.78)0.8 (–)1.1 V C-E Breakdown Voltage V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ E-B Breakdown Voltage V(BR)EBO IC=(–)10µA, IC=0 (–30)60 V (–25)50 V (–)15 V Note:The specifications shown above are for each individual transistor. ( ):PNP Marking:150 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 52098HA (KT)/12094TH (KOTO) 8-7600 No.3965-1/4 FC150 No.3965-2/4 FC150 No.3965-3/4 FC150 No products described or contained herein are intended for use in surgical implants, life-support systems, aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and the like, the failure of which may directly or indirectly cause injury, death or property loss. Anyone purchasing any products described or contained herein for an above-mentioned use shall: Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors and all their officers and employees, jointly and severally, against any and all claims and litigation and all damages, cost and expenses associated with such use: Not impose any responsibilty for any fault or negligence which may be cited in any such claim or litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of their officers and employees jointly or severally. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 1998. Specifications and information herein are subject to change without notice. PS No.3965-4/4