S DM8958 P R E LIMINAR Y S amHop Microelectronics C orp. Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S ID 30V 7A R DS (ON) P R ODUC T S UMMAR Y (P -C hannel) ( m W ) MAX V DS S ID -30V -5A R DS (ON) 32 @ V G S = 10V ( m W ) MAX 52 @ V G S = -10V 50 @ V G S = 4.5V 90 @ V G S = -5V D1 D1 D2 D2 8 7 6 5 1 2 3 S1 G1 S 2 S O-8 1 4 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter S ymbol N-C hannel P-C hannel Unit Drain-S ource Voltage V DS 30 -30 V Gate-S ource Voltage V GS 20 20 V Drain C urrent-C ontinuous a @ T J =125 C b -P ulsed ID 7.0 -5.0 A IDM 28 -20 A Drain-S ource Diode Forward C urrent a IS 1.7 -1.7 A Maximum P ower Dissipation a PD 2.0 W T J , T S TG -55 to 150 C Operating Junction and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R qJA 1 62.5 C /W S DM8958 N-Channel E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter S ymbol Condition Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = 250uA Zero Gate Voltage Drain Current IDS S V DS = 24V, V GS = 0V Gate-Body Leakage IGS S V GS = 20V, V DS =0V Gate Threshold Voltage V GS (th) V DS = V GS , ID = 250uA Drain-S ource On-S tate R esistance R DS (ON) Min Typ C Max Unit OFF CHAR ACTE R IS TICS 30 V 1 uA 100 nA 3 V V GS =10V, ID = 6.0A 32 m ohm V GS = 4.5V,ID = 5.0A 50 m ohm ON CHAR ACTE R IS TICS b ID(ON) gFS On-S tate Drain Current Forward Transconductance DYNAMIC CHAR ACTE R IS TICS C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS R ise Time Turn-Off Delay Time V DS = 5V, ID = 6.0A 1.8 A 30 16 S 510 PF 235 PF 56 PF c Input Capacitance Turn-On Delay Time V DS = 5V, V GS = 10V 1 V DS =15V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 21 40 ns 20 40 ns 27 55 ns 115 230 ns V DS =15V, ID = 1A,V GS =10V 13 20 nC V DS =15V, ID = 1A,V GS =4.5V 6 10 nC V DD = 15V, ID = 1A, V GE N = 10V, R L = 15 W R GE N = 10 W V DS =15V, ID = 1A, V GS =10V 2 2.1 nC 2 nC S DM8958 P-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter Condition S ymbol Min Typ C Max Unit OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage BV DS S V GS = 0V, ID = -250uA Zero Gate Voltage Drain Current IDS S V DS = -24V, V GS = 0V -1 Gate-Body Leakage IGS S V GS = 20V, V DS = 0V 100 nA Gate Threshold Voltage V GS (th) V DS = V GS , ID = -250uA Drain-S ource On-S tate R esistance R DS (ON) On-S tate Drain Current ID(ON) gFS -30 V uA ON CHAR ACTE R IS TICS b Forward Transconductance -1 -1.7 -3 V V GS =-10V, ID= -4.5A 52 m ohm V GS = -5V , ID =-4A 90 m ohm V DS = -5V, V GS = -10V V DS = -5V, ID = - 4.5A A -20 10 S 860 PF 470 PF 180 PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance C IS S Output Capacitance C OS S R everse Transfer Capacitance CRSS S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time V DS =-15V, V GS = 0V f =1.0MH Z c tD(ON) tr tD(OFF) Fall Time tf Total Gate Charge Qg Gate-S ource Charge Q gs Gate-Drain Charge Q gd 9 20 ns 10 40 ns 37 90 ns 23 110 ns V DS =-15V,ID=-5.3A,V GS =-10V 15 20 nC V DS =-15V,ID=-5.3A,V GS =-4.5V 8.7 10.5 nC V DS =-15V, ID = - 5.3A, V GS =-10V 3 nC 4 nC V D = -15V, R L = 15 W ID = -1A, V GE N = -10V, R GE N = 10 W 3 S DM8958 E LE CTR ICAL CHAR ACTE R IS TICS (T A=25 C unless otherwise noted) Parameter C Min Typ Max Unit Condition S ymbol DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS b Diode Forward Voltage 0.77 1.2 -0.82 -1.2 V G S = 0V, Is =1.7A N-C h V G S = 0V, Is =-1.7A P -C h VSD Notes a.S urface Mounted on FR 4 Board, t ＜10sec. b.Pulse Test:Pulse Width ＜ 300us, Duty Cycle ＜ 2%. c.Guaranteed by design, not subject to production testing. N-C hannel 25 25 V G S =10,9,8,7,6,5,4V 20 I D , Drain C urrent (A) ID , Drain C urrent(A) 20 15 10 V G S =3V 5 25 C 15 10 T j=125 C 5 -55 C 0 0 0.5 1 1.5 2 2.5 0 0.0 3 V DS , Drain-to-S ource Voltage (V ) R DS (ON) , On-R es is tance(Ohms ) C , C apacitance (pF ) 1000 800 C is s 400 C os s 200 C rs s 0 5 10 15 20 25 3.0 4.0 5.0 6.0 F igure 2. Trans fer C haracteris tics 1200 0 2.0 V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 600 1.0 30 0.030 V G S =10V 0.025 0.020 T j=125 C 0.015 25 C 0.010 -55 C 0.005 0 0 5 10 15 20 V DS , Drain-to S ource Voltage (V ) I D , Drain C urrent(A) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 4 V S DM8958 1.09 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage N-C hannel V DS =V G S I D =250 uA 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 1.10 ID=-250 uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 25 40.0 20 Is , S ource-drain current (A) gF S , T rans conductance (S ) 1.15 15 10 5 V DS =15V 0 0 5 10 15 10.0 1.0 20 0.4 0.6 0.8 1.0 1.2 1.4 I DS , Drain-S ource C urrent (A) V S D , B ody Diode F orward V oltage (V ) with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S DM8958 P -C hannel 20 25 16 -I D , Drain C urrent (A) -I D , Drain C urrent (A) 20 -V G S =10,9,8,7,6,5V 15 4V 10 5 0 3V 0.5 1.0 1.5 2.0 2.5 T j=125 C 12 8 4 0 0 3.0 0 R DS (ON) , On-R es is tance(Ohms ) (Normalized) 3000 C , C apacitance (pF ) 2500 2000 1500 C is s C os s C rs s 0 0 5 10 15 20 25 1 1.5 2 2.5 3 F igure 2. Trans fer C haracteris tics F igure 1. Output C haracteris tics 500 0.5 -V G S , G ate-to-S ource Voltage (V ) -V DS , Drain-to-S ource Voltage (V ) 1000 5 -55 C 25 C 30 1.8 1.6 V G S =-10V I D =-5.3A 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 T j, J unction T emperature ( C ) -V DS , Drain-to S ource Voltage (V ) F igure 4. On-R es is tance Variation with Temperature F igure 3. C apacitance 6 S DM8958 1.09 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage P -C hannel V DS =V G S I D =-250uA 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 1.10 I D =-250uA 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature F igure 6. B reakdown V oltage V ariation with T emperature 15 20.0 V G S =0V 12 -Is , S ource-drain current (A) gF S , T rans conductance (S ) 1.15 9 6 3 V DS =-15V 1.0 0 0 5 10 15 10.0 20 0.4 0.6 0.7 0.9 1.1 1.3 -V S D , B ody Diode F orward V oltage (V ) -I DS , Drain-S ource C urrent (A) F igure 7. T rans conductance V ariation with Drain C urrent 7 F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent S DM8958 40 10 V DS =15V I D =9A 8 I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) N-C hannel 6 4 2 10 R DS (O N) 0 2 4 6 8 10 12 it 10m 100 11 s ms 1s DC V G S =10V S ingle P ulse T A =25 C 0.1 0.03 0 L im 0.1 14 16 1 10 30 50 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 50 10 V DS =-15V I D =-4.5A 8 -I D , Drain C urrent (A) V G S , G ate to S ource V oltage (V ) P -C hannel 6 4 2 0 10 RD 3 6 9 12 15 18 21 24 )L im it 10 10 0.1 0m ms s 1s 1 0.03 0 ON S( DC V G S =-10V S ingle P ulse T A =25 C 0.1 1 10 30 50 -V DS , Drain-S ource V oltage (V ) Q g, T otal G ate C harge (nC ) F igure 10. Maximum S afe O perating Area F igure 9. G ate C harge 8 S DM8958 V DD ton V IN D td(off) tf 90% 90% V OUT V OUT VG S R GE N toff tr td(on) RL 10% INVE R TE D 10% G 90% V IN S 50% 50% 10% P ULS E WIDTH F igure 12. S witching Waveforms F igure 11. S witching T es t C ircuit r(t),Normalized E ffective T ransient T hermal Impedance 2 1 Duty C ycle=0.5 0.2 P DM 0.1 0.1 t1 0.05 1. 2. 3. 4. 0.02 S ingle P uls e 0.01 10 -4 10 -3 10 -2 10 -1 R θJ A (t)=r (t) * R θJ A R θJ A =S ee Datas heet T J M-T A = P DM* R θJ A (t) Duty C ycle, D=t1/t2 1 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 9 t2 10 100