IRFM450 MECHANICAL DATA Dimensions in mm (inches) 13.59 (0.535) 13.84 (0.545) 6.32 (0.249) 6.60 (0.260) 1.02 (0.040) 1.27 (0.050) 20.07 (0.790) 20.32 (0.800) 3.53 (0.139) Dia. 3.78 (0.149) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 1 2 VDSS ID(cont) RDS(on) 500V 12A Ω 0.415Ω FEATURES 3 • HERMETICALLY SEALED ISOLATED PACKAGE • AVALANCHE ENERGY RATING 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) BSC • SIMPLE DRIVE REQUIREMENTS 3.81 (0.150) BSC TO–254AA – Metal Package Pin 1 – Drain Pin 2 – Source Pin 3 – Gate • ALSO AVAILABLE IN TO–220 METAL AND SURFACE MOUNT PACKAGES • EASE OF PARALLELING ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) ±20V VGS Gate – Source Voltage ID Continuous Drain Current (VGS = 10V , Tcase = 25°C) 12A ID Continuous Drain Current (VGS = 10V , Tcase = 100°C) 8A IDM Pulsed Drain Current 1 PD Power Dissipation @ Tcase = 25°C Linear Derating Factor 48A 150W 1.2W/°C EAS Single Pulse Avalanche Energy 2 IAR Avalanche Current 1 EAR Repetitive Avalanche Energy 1 dv/dt Peak Diode Recovery 3 TJ , Tstg Operating and Storage Temperature Range TL Lead Temperature measured 1/16” (1.6mm) from case for 10 sec. RθJC Thermal Resistance Junction to Case 0.83°C/W RθCS Thermal Resistance Case to Sink (Typical) 0.21°C/W RθJA Thermal Resistance Junction to Ambient 750mJ 12A 15mJ 3.5V/ns –55 to 150°C 300°C 48°C/W Notes 1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature 2) @ VDD = 50V , L ≥ 9.4mH , RG = 25Ω , Peak IL = 12A , Starting TJ = 25°C 3) @ ISD ≤ 12A , di/dt ≤ 130A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 2.35Ω Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/95 IRFM450 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter BVDSS Test Conditions STATIC ELECTRICAL RATINGS Drain – Source Breakdown Voltage ∆BVDSS Temperature Coefficient of ∆TJ RDS(on) VGS = 0 ID = 1mA Min. Typ. Max. 500 Reference to 25°C V 0.68 V / °C Breakdown Voltage ID = 1mA Static Drain – Source On–State VGS = 10V ID = 8A 0.415 VGS = 10V ID = 12A 0.515 VDS = VGS ID = 250µA VDS ≥ 15V IDS = 8A VGS = 0 VDS = 0.8BVDSS 25 TJ = 125°C 250 Resistance 2 VGS(th) Gate Threshold Voltage 2 2 4 6.5 gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current IGSS Forward Gate – Source Leakage VGS = 20V 100 IGSS Reverse Gate – Source Leakage VGS = –20V –100 Ciss DYNAMIC CHARACTERISTICS Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance CDC Drain – Case Capacitance Qg Total Gate Charge VGS = 10V 55 120 Qgs Gate – Source Charge ID = 12A 5 19 Qgd Gate – Drain (“Miller”) Charge VDS = 0.5BVDSS 27 70 td(on) Turn– On Delay Time tr Rise Time td(off) Turn–Off Delay Time tf Fall Time IS SOURCE – DRAIN DIODE CHARACTERISTICS Continuous Source Current 600 VDS = 25V f = 1MHz 190 170 trr Reverse Recovery Time 2 12 TJ = 25°C VGS = 0 IF = 12A 2 nC ns 130 48 IS = 12A nA 35 1 Diode Forward Voltage 2 µA 12 RG = 2.35Ω VSD V (Ω) S(Ω pF 240 ID = 12A Pulse Source Current Ω 2700 VGS = 0 VDD = 250V ISM Unit TJ = 25°C di / dt ≤ 100A/µs VDD ≤ 50V Qrr Reverse Recovery Charge ton Forward Turn–On Time LD PACKAGE CHARACTERISTICS Internal Drain Inductance Measured from 6mm down drain lead to centre of die 8.7 LS Internal Source Inductance 8.7 A 1.7 V 1600 ns 14 µC Negligible Measured from 6mm down source lead to source bond pad nH Notes 1) Repetitive Rating – Pulse width limited by Maximum 2) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2% Junction Temperature * IS Current limited by pin diameter. Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/95