www.fairchildsemi.com FS6S1265RE Fairchild Power Switch(FPS) Features Description • • • • • • • • • • • • • • • The Fairchild Power Switch(FPS) product family is specially designed for an off line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn on/turn off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, a Fairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply. Wide Operating Frequency Range Up to 150kHz Lowest Cost SMPS Solution Lowest External Components Low Start up Current (Max:170uA) Low Operating Current (Max:15mA) Internal High Voltage SenseFET Built-in Auto Restart Circuit Over Voltage Protection (Auto Restart Mode) Over Load Protection (Auto Restart Mode) Over Current Protection (Auto Restart Mode) Internal Thermal Protection (Auto Restart Mode) Pulse By Pulse Over Current Limiting Internal Burst Mode Controller for Stand-by Mode Under Voltage Lockout With Hysteresis External Sync. Terminal TO-3P-5L 1 1. Drain 2. Gnd 3. VCC 4. FeedBack 5. Sync. Internal Block Diagram Vref SoftStart & Sync Vcc Drain 3 1 Vpp=5.8/7.2V Internal Bias OSC 5 Vref Vref UVLO Burst mode controller Vfb Vth=1V S Ron Q R Vcc Vth=11V/12V Roff PWM Feedback 4 2.5R R Ifb Vref Vfb Offset Vcc Rsenese Idelay OCL OLP Vth=7.5V S Vcc Vth=30V OVP UVLO Reset (Vcc=9V) Q Filter (130nsec) Vth=1V 2 GND TS D (Tj=160℃) R Rev.1.0.1 ©2003 Fairchild Semiconductor Corporation FS6S1265RE Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic Drain-Gate Voltage(RGS=1MΩ) Gate-Source(GND) Voltage Drain Current Pulsed (1) Symbol Value Unit VDGR 650 V VGS ±30 V IDM 48 ADC Continuous Drain Current (Tc = 25°C) ID 12 ADC Continuous Drain Current (Tc = 100°C) ID 8.4 ADC Single Pulsed Avalanche Current(3) (Energy (2)) IAS(EAS) 30(950) A(mJ) Maximum Supply Voltage VCC,MAX 35 V VFB -0.3 to VCC V Input Voltage Range VSS -0.3 to 10 V PD (Watt H/S) 240 W Darting 1.92 W/°C Operating Junction Temperature. TJ +150 °C Operating Ambient Temperature. TA -25 to +85 °C TSTG -55 to +150 °C Total Power Dissipation Storage Temperature Range. Note: 1. Repetitive rating: pulse width limited by maximum junction temperature 2. L = 10mH, starting Tj = 25°C 3. L = 13uH, starting Tj = 25°C 2 FS6S1265RE Electrical Characteristics (SFET Part) (Ta = 25°C unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Static Drain-Source on Resistance (1) Transconductance(2) Forward Input Capacitance Min. Typ. Max. Unit 650 - - V VDS=Max, Rating, VGS = 0V - - 200 µA VDS= 0.8Max, Rating, VGS = 0V, TC = 125°C - - 300 µA RDS(on) VGS = 10V, ID = 4.5A - 0.7 0.9 Ω gfs VDS = 50V, ID = 4.5A - - - S - 1820 - - 185 - - 32 - - 38 - - 120 - - 200 - - 100 - - 60 - - 10 - - 30 - Coss Reverse Transfer Capacitance Crss Turn on Delay Time td(on) Turn Off Delay Time Fall Time VGS = 0V, ID = 50µA Ciss Output Capacitance Rise Time Conditions tr td(off) tf Total Gate Charge (Gate-Source+Gate-Drain) Qg Gate-Source Charge Qgs Gate-Drain (Miller) Charge Qgd VGS = 0V, VDS = 25V, f = 1MHz VDD = 0.5BVDSS, ID = 12.0A (MOSFET switching time are essentially independent of operating temperature) VGS = 10V, ID = 12.0A, VDS = 0.5BVDSS(MOSFET Switching time are Essentially independent of Operating temperature) pF nS nC Note: 1. Pulse test: pulse width ≤ 300us, duty 2% 12. S = --R 3 FS6S1265RE Electrical Characteristics (Control Part) (Continued) (VCC=16V, Tamb = 25°C unless otherwise specified) Parameter Symbol Conditions Min. Typ. Max. Unit UVLO SECTION Start Threshold Voltage VSTART VFB=GND 14 15 16 V Stop Threshold Voltage VSTOP VFB=GND 8 9 10 V 22 25 28 kHz OSCILLATOR SECTION Initial Frequency FOSC Voltage Stability - FSTABLE 12V ≤ VCC ≤ 23V 0 1 3 % Temperature Stability (Note2) ∆FOSC -25°C ≤ Τa ≤ 85°C 0 ±5 ±10 % Maximum Duty Cycle DMAX - 92 95 98 % Minimum Duty Cycle DMIN - - - 0 % FEEDBACK SECTION Feedback Source Current IFB VFB=GND 0.7 0.9 1.1 mA Shutdown Feedback Voltage VSD VFB ≥ 6.9V 6.9 7.5 8.1 V IDELAY VFB=5V 1.6 2.0 2.4 µA VSS VFB=2V 4.7 5.0 5.3 V ISS VSS=0V Shutdown Delay Current SYNC. & SOFTSTART SECTION Softstart Voltage 0.8 1.0 1.2 mA Sync High Threshold Voltage(Note3) VSYNCH VCC=16V , VFB=5V - 7.2 - V Sync Low Threshold Voltage(Note3) VSYNCL VCC=16V , VFB=5V - 5.8 - V Burst Mode Low Threshold Voltage VBURL VFB=0V 10.4 11.0 11.6 V Burst Mode High Threshold Voltage VBURH VFB=0V 11.4 12.0 12.6 V VCC=10.5V 0.7 1.0 1.3 V 0.45 0.6 0.75 A 40 50 60 kHz 7.04 8.0 8.96 A 27 30 33 V Softstart Current BURST MODE SECTION Burst Mode Enable Feedback Voltage VBEN Burst Mode Peak Current Limit(Note4) IBURPK Burst Mode Freqency FBUR VCC=10.5V , VFB=0V CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit (Note4) IOVER - PROTECTION SECTION VCC ≥ 27V Over Voltage Protection VOVP Over Current Latch voltage(Note3) VOCL - 0.9 1.0 1.1 V TSD - 140 160 - °C - 0.1 0.17 mA - 10 15 mA Thermal Shutdown Tempature(Note2) TOTAL DEVICE SECTION Start-Up Current Operating Supply Current(Note1) ISTART VFB = GND, VCC = 14V IOP VFB = GND, VCC = 16V IOP(MIN) VFB = GND, VCC = 12V IOP(MAX) VFB = GND, VCC = 30V Notes: 1. These parameters are the Current Flowing in the Control IC. 2. These parameters, although guaranteed, are not 100% tested in production 3. These parameters, although guaranteed, are tested in EDS(wafer test) process 4. These parameters are indicated Inductor Current. 4 FS6S1265RE Typical Performance Characteristics Start Up Current vs. Temp 0.150 [mA] 0.125 10.5 0.100 10.0 0.075 9.5 0.050 -25 0 25 50 75 100 125 150 Figure 1. Start Up Current vs. Temp. 9.0 -25 16.0 [V] Operating Current vs. Temp [mA] 11.0 10.0 15.5 9.5 15.0 9.0 14.5 8.5 0 25 50 75 100 125 150 Figure 3. Start Threshold Voltage vs. Temp. [KHz] [V] 8.0 -25 50 75 100 125 150 Stop Threshold Voltage vs. Temp 0 25 50 75 100 125 150 Figure 4. Stop Threshold Voltage vs. Temp. Initial Freqency vs. Temp 96.0 28 25 Figure 2. Operating Current vs. Temp. Start Threshold Voltage vs. Temp 14.0 -25 0 Maximum Duty vs. Temp [%] 27 95.5 26 95.0 25 24 94.5 23 22 -25 0 25 50 75 100 125 Figure 5. Initial Frequency vs. Temp. 150 94.0 -25 0 25 50 75 100 125 150 Figure 6. Maximum Duty vs. Temp. 5 FS6S1265RE Typical Performance Characteristics (Continued) 0.45 [V] Feedback Offset Voltage vs. Temp 1.1 0.40 [mA] Feedback Source Current vs. Temp 1.0 0.35 0.9 0.30 0.8 0.25 0.20 -25 0 25 50 75 100 125 150 Figure 7. Feedback Offset Voltage vs. Temp. 2.4 [uA] ShutDown Delay Current vs. Temp 2.0 7.50 1.8 7.45 25 50 75 100 125 150 Figure 9. Shutdown Delay Current vs. Temp. 5.02 7.40 -25 75 100 125 150 0 25 50 75 100 125 150 [V] OverVoltage Protection vs. Temp 31.0 5.01 30.5 5.00 30.0 4.99 29.5 4.98 -25 50 Figure 10. Shutdown Feedback Voltage vs. Temp. Softstart Voltage vs. Temp [V] 25 [V] ShutDown Feedback Voltage vs. Temp 7.60 7.55 0 0 Figure 8. Feedback Source Current vs. Temp. 2.2 1.6 -25 0 25 50 75 100 125 Figure 11. Softstart Voltage vs. Temp. 6 0.7 -25 150 29.0 -25 0 25 50 75 100 125 150 Figure 12. Over Voltage Protection vs. Temp. FS6S1265RE Typical Performance Characteristics (Continued) Burst Mode Low Voltage vs. Temp [V] [V] 11.2 12.2 11.1 12.1 11.0 12.0 10.9 11.9 10.8 -25 0 25 50 75 100 125 150 Figure 13. Burst Mode Low Voltage vs. Temp. Burst Mode Freqency vs. Temp [KHz] 54 11.8 -25 Burst Mode High Voltage vs. Temp 0 25 50 75 100 125 150 Figure 14. Burst Mode High Voltage vs. Temp. 1.3 [V] Burst ModeEnable Voltage vs. Temp 1.2 52 1.1 1.0 50 0.9 48 0.8 46 -25 0 25 50 75 100 125 150 Figure 15. Burst Mode Frequency vs. Temp. 0.75 [A] 0.7 -25 0 25 50 75 100 125 150 T Figure 16. Burst Mode Enable Voltage vs. Temp. Burst Mode Peak Current vs.Temp Over Current Limit vs. Temp [A] 8.2 0.70 8.1 0.65 0.60 8.0 0.55 7.9 0.50 0.45 -25 0 25 50 75 100 125 150 Figure 17. Burst ModeTPeak Current vs. Temp. 7.8 -25 0 25 50 75 100 125 150 Figure 18. Peak Current Limit vs. Temp. 7 FS6S1265RE Package Dimensions TO-3P-5L 8 FS6S1265RE Package Dimensions (Continued) TO-3P-5L (Forming) 9 FS6S1265RE Ordering Information Product Number FS6S1265RETU FS6S1265REYDTU Package Marking Code BVdss Rds(on) TO-3P-5L 6S1265R E 650V 0.7Ω TO-3P-5L(Forming) TU : Non Forming Type YDTU : Forming Type DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 8/25/03 0.0m 001 Stock#DSxxxxxxxx 2003 Fairchild Semiconductor Corporation