LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For 19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3 %, and consumes 130 mA total DC current. The LX5512E is available in a 16-pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5512E an ideal solution for high-gain power amplifier requirements for IEEE 802.11b/g applications. Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~50mA Power Gain ~34dB @ 2.45GHz and Pout = 19dBm Total Current 130mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) WWW . Microsemi .C OM The LX5512E is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a three-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). It operates at a single low voltage supply of 3.3V with 34 dB power gain between 2.4-2.5GHz, at a low quiescent current of 50 mA. APPLICATIONS IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com IEEE 802.11b/g PRODUCT HIGHLIGHT LX5512E PACKAGE ORDER INFO Plastic MLPQ LQ 16 pin LX5512E-LQ Note: Available in Tape & Reel. Append the letter “T” to the part number. (i.e. LX5512E-LQT) Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5512E ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT 1 2 3 4 8 7 6 5 GND RF IN RF IN VB1 WWW . Microsemi .C OM * 11 1 0 9 VCC Plastic MLPQ 16-Pin 14 15 16 VB2 LQ 1 3 VB3 DET REF THERMAL DATA 12 VC1 VC3 RF OUT RF OUT DET PWR GND VC2 Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. GND DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power............................................................................................. 5dBm Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-60°C to +150°C * Pad is Ground LQ PACKAGE (Bottom View) THERMAL RESISTANCE-JUNCTION TO CASE, θJC 10°C/W 50°C/W THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA FUNCTIONAL PIN DESCRIPTION Name Description RF IN RF input for the power amplifier. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VB1 Bias current control voltage for the first stage. VB2 Bias current control voltage for the second stage VB3 Bias current control voltage for the third stage. The VB3 pin can be connected with the first and second stage control voltage (VB1,VB2) into a single reference voltage (referred to as Vref) through an external resistor bridge. VCC Supply voltage for the bias reference and control circuits. The VCC feed line should be terminated with a 10 nF bypass capacitor close to connector pin. This pin can be combined with VC1, VC2 and VC3 pins, resulting in a single supply voltage (referred to as Vc). RF OUT RF output for the power amplifier. This pin is DC-decoupled from the transistor collector of the third stage.. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 120pF bypass capacitor, followed by a 10 Ohm resistor VC2 Power supply for second stage amplifier. The VC2 feedline should be terminated with a 47 pF bypass capacitor, followed by a 5 Ohm resistor VC3 Power supply for the third stage amplifier. The VC3 feedline should be terminated with a 120 pF bypass capacitor. This pin can be combined with VC1,VC2 and VCC pins, resulting in a single supply voltage (referred to as Vc DET_REF Power detector reference output pin should be terminated with a 100 kOhm loading resistor DET_PWR Power detector output-coupled pin should be terminated with a 100 kOhm loading resistor GND Copyright 2000 Rev. 1.2, 2004-01-16 The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier.. Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA VC1 LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET ELECTRICAL CHARACTERISTICS Parameter Symbol Frequency Range Power Gain at Pout = 19dBm EVM at Pout = 19dBm Total Current at Pout = 19dBm Quiescent Current Bias Control Reference Current Small-Signal Gain Gain Flatness Gain Variation Over Temperature Input Return Loss Output Return Loss Reverse Isolation Second Harmonic Third Harmonic Total Current at Pout=23dBm nd 2 side lobe at 23 dBm Ramp-On Time Differential Detector response f Gp Test Conditions Min tON 70°C except where LX5512E Typ Max 2.4 64GQAM / 54Mbps Ic_total Icq Iref S21 ∆S21 ∆S21 S11 S22 S12 ≤ For Icq = 50mA Over 100MHz 0°C to +70°C Pout = 19dBm Pout = 19dbm 11 Mbps CCK 11 Mbps CCK 10 ~ 90% 19 dBm OFDM, 100kOhm’s 2.5 34 3.0 130 50 1.6 34 1.5 1.5 8 10 -50 -40 -40 200 -50 100 1.5 Units GHz dB % mA mA mA dB dB dB dB dB dB dBc dBc mA dBc ns V WWW . Microsemi .C OM Unless otherwise specified, the following specifications apply over the operating ambient temperature 0°C ≤ TA otherwise noted and the following test conditions: Vc = 3.3V, Vref = 2.9V, Icq = 50mA, TA = 25°C Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. ELECTRICALS Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET CHARACTERISTIC CURVES dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) WWW . Microsemi .C OM 50 40 m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=33.462 dB(S(2,1))=35.376 m1 m7 30 20 10 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 freq, GHz Figure 1 – S-Parameter (VC = 3.3V, VREF = 2.9V, Icq = 50mA) 2.4 GHz 2.45 GHz 2.5 GHz 7 6 EVM_PA /[%] 5 4 3 2 GRAPHS 1 0 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] Figure 2 – EVM with 54Mb/s 64 QAM OFDM (Vc = 3.3V, Vref = 2.9V, Icq = 50mA) Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET CHARACTERISTIC CURVES 2.45 GHz WWW . Microsemi .C OM 2.4 GHz 2.5 GHZ -45 ACP_30 MHz /[dBc] -47.5 -50 -52.5 -55 -57.5 -60 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] Figure 3 – ACP with 54MB/s 64 QAM OFDM (VC = 3.3V, Vref = 2.9V, Icq = 50mA) 2.4 GHz 2.45 GHZ 2.5 GHZ 175 CURRENT_3.3V /mA 150 125 100 75 GRAPHS 50 0 2 4 6 8 10 12 14 16 18 20 22 Output Power /[dBm] Figure 4 – Current with 54MB/s 64 QAM OFDM (VC = 3.3V, Vref = 2.9V, Icq = 50mA) Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5512E ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET CHARACTERISTIC CURVES WWW . Microsemi .C OM Figure 5 – Spectrum with 23dBm 11Mb/s CCK (Vc = 3.3V, Vref = 2.9V, Icq = 50mA, Ic = 202mA, Frequency = 2.45GHz) 50 40 m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=34.020 dB(S(2,1))=35.911 m1 m7 dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) 30 20 10 0 -10 -20 -30 GRAPHS -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 freq, GHz Figure 6 – S-Parameter (VC = 5.0V, VREF = 2.9V, Icq = 55mA) Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET CHARACTERISTIC CURVES 2.45 GHz WWW . Microsemi .C OM 2.4 GHz 2.5 GHz 4 3.5 EVM_PA /[%] 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 7 – EVM with 54Mb/s 64QAM OFDM (Vc = 5V, Vref = 2.9V, Icq =55mA,) 2.4 GHz 2.45 GHz 2.5 GHZ -45 ACP_30 MHz /[dBc] -47.5 -50 -52.5 -55 -57.5 GRAPHS -60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 8 – ACP Data with 54Mb/s 64 QAM OFDM (Vc = 5V, Vref = 2.9V, Icq = 55mA) Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET CHARACTERISTIC CURVES 2.45 GHZ WWW . Microsemi .C OM 2.4 GHz 2.5 GHZ 225 CURRENT_5.0V /mA 200 175 150 125 100 75 50 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 9 – Current with 54MB/s 64 QAM OFDM (VC = 5.0V, Vref = 2.9V, Icq = 55mA) GRAPHS Figure 10 – Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.9V, Icq = 55mA, Ic = 258mA, Frequency = 2.45GHz) Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 LX5512E InGaP HBT 2.4 – 2.5 GHz Power Amplifier ® TM P RODUCTION D ATA S HEET PACKAGE DIMENSIONS WWW . Microsemi .C OM LQ 16-Pin MLPQ 3x3 (67x67 mil DAP) D b D2 E E2 e K L A A1 A3 Dim A A1 A3 b D E e D2 E2 K L MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 Note: 1. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. MECHANICALS Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 10 LX5512E TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright 2000 Rev. 1.2, 2004-01-16 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 11