FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS(ON) = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current • Neutron - G Meets Pre-RAD Specifications to 100K RAD (Si) Defined End Point Specs at 300K RAD (Si) and 1000K RAD (Si) Performance Permits Limited Use to 3000K RAD (Si) Survives 3E9 RAD (Si)/s at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 7.0nA Per-RAD (Si)/s Typically Pre-RAD Specifications for 3E13 Neutrons/cm2 Usable to 3E14 Neutrons/cm2 Description Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V product. Dose rate hardness (GAMMA DOT) exists for rates to 1E9 without current limiting and 2E12 with current limiting. S D CAUTION: Beryllia Warning per MIL-S-19500 refer to package specifications. Symbol This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. D G This part may be supplied as a die or in various packages other than shown above. Reliability screening is available as either non TX (commercial), TX equivalent of MIL-S-19500, TXV equivalent of MIL-S-19500, or space equivalent of MIL-S-19500. Contact the Intersil Corporation High-Reliability Marketing group for any desired deviations from the data sheet. Absolute Maximum Ratings S TC = +25oC, Unless Otherwise Specified Drain-Source Voltage. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain-Gate Voltage (RGS = 20kΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT TC = +100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PT Derated Above +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Inductive Current, Clamped, L = 100µH, (See Test Figure). . . . . . . . . . . . . . . . . . . . . . . . . . .ILM Continuous Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IS Pulsed Source Current (Body Diode) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ISM Operating And Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJC, TSTG Lead Temperature (During Soldering) Distance > 0.063 in. (1.6mm) From Case, 10s Max. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 4-1 FRF9150D, R, H -100 -100 UNITS V V 23 15 69 ±20 A A A V 125 50 1.00 69 23 69 -55 to +150 W W W/oC A A A oC 300 oC File Number 3243.2 FRF9150D, FRF9150R, FRF9150H Pre-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER SYMBOL TEST CONDITIONS MIN MAX UNITS Drain-Source Breakdown Volts BVDSS VGS = 0, ID = 1mA -100 - V Gate-Threshold Volts VGS(TH) VDS = VGS, ID = 1mA -2.0 -4.0 V Gate-Body Leakage Forward IGSSF VGS = -20V - 100 nA Gate-Body Leakage Reverse IGSSR VGS = +20V - 100 nA Zero-Gate Voltage Drain Current IDSS1 IDSS2 IDSS3 VDS = -100V, VGS = 0 VDS = -80V, VGS = 0 VDS = -80V, VGS = 0, TC = +125oC - 1 0.025 0.25 mA Time = 20µs - 69 A Rated Avalanche Current IAR Drain-Source On-State Volts VDS(ON) VGS = -10V, ID = 23A - -3.38 V Drain-Source On Resistance rDS(ON) VGS = -10V, ID = 15A - 0.140 Ω tD(ON) VDD = -50V, ID = 23A - 170 Pulse Width = 3µs - 620 Period = 300µs, RG = 25Ω - 600 0 ≤ VGS ≤ 10 (See Test Circuit) - 242 Turn-On Delay Time Rise Time tR Turn-Off Delay Time ns tD(OFF) Fall Time tF Gate-Charge Threshold QG(TH) 4 16 Gate-Charge On State QG(ON) 60 240 126 504 3 14 VDD = -50V, ID = 23A IGS1 = IGS2 0 ≤ VGS ≤ 20 nc Gate-Charge Total QGM Plateau Voltage VGP Gate-Charge Source QGS 17 68 Gate-Charge Drain QGD 21 86 Diode Forward Voltage VSD -0.6 -1.8 V Reverse Recovery Time tT - 700 ns - 1.0 - 48 nc ID = 23A, VGD = 0 I = 23A; di/dt = 100A/µs Junction-To-Case RθJC Junction-To-Ambient RθJA V Free Air Operation oC/W ELECTRONIC SWITCH OPENS WHEN IAS IS REACHED VDD VDS L RL + CURRENT I TRANSFORMER AS VDS - VARY tP TO OBTAIN REQUIRED PEAK IAS 0V DUT 0V VGS = -12V + 50Ω - tP DUT RGS VDD 50V-150V 50Ω VGS ≤ 20V FIGURE 1. RESISTIVE SWITCHING TEST CIRCUIT FIGURE 2. UNCLAMPED ENERGY TEST CIRCUIT 4-2 FRF9150D, FRF9150R, FRF9150H Post-Radiation Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETER Drain-Source Breakdown Volts Gate-Source Threshold Volts Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero-Gate Voltage Drain Current Drain-Source On-State Volts Drain-Source On Resistance SYMBOL TYPE TEST CONDITIONS MIN MAX UNITS (Notes 4, 6) BVDSS FRF9150D, R VGS = 0, ID = 1mA -100 - V (Notes 5, 6) BVDSS FRF9150H VGS = 0, ID = 1mA -95 - V (Notes 4, 6) VGS(TH) FRF9150D, R VGS = VDS, ID = 1mA -2.0 -4.0 V (Notes 3, 5, 6) VGS(TH) FRF9150H VGS = VDS, ID = 1mA -2.0 -6.0 V (Notes 4, 6) IGSSF FRF9150D, R VGS = -20V, VDS = 0 - 100 nA (Notes 5, 6) IGSSF FRF9150H VGS = -20V, VDS = 0 - 200 nA (Notes 2, 4, 6) IGSSR FRF9150D, R VGS = 20V, VDS = 0 - 100 nA (Notes 2, 5, 6) IGSSR FRF9150H VGS = 20V, VDS = 0 - 200 nA (Notes 4, 6) IDSS FRF9150D, R VGS = 0, VDS = -80V - 25 µA (Notes 5, 6) IDSS FRF9150H VGS = 0, VDS = -80V - 100 µA (Notes 1, 4, 6) VDS(ON) FRF9150D, R VGS = -10V, ID = 23A - -3.38 V (Notes 1, 5, 6) VDS(ON) FRF9150H VGS = -16V, ID = 23A - -5.07 V (Notes 1, 4, 6) rDS(ON) FRF9150D, R VGS = -10V, ID = 15A - 0.140 Ω (Notes 1, 5, 6) rDS(ON) FRF9150H VGS = -14V, ID = 15A - 0.210 Ω NOTES: 1. Pulse test, 300µs (Max) 2. Absolute value 3. Gamma = 300K RAD (Si) 4. Gamma = 10K RAD (Si) for “D”, 100K RAD (Si) for “R”. Neutron = 3E13 5. Gamma = 1000K RAD (Si). Neutron = 3E13 6. In situ Gamma bias must be sampled for both VGS = -10V, VDS = 0V and VGS = 0V, VDS = 80% BVDSS 7. Gamma data taken 1/18/91 on TA 17751 devices by GE ASTRO SPACE; EMC/SURVIVABILITY LABORATORY; KING OF PRUSSIA, PA 19401 8. Single event drain burnout testing by Titus, J.L., et al of NWSC, Crane, IN at Brookhaven Nat. Lab. Dec 11-14, 1989 9. Neutron derivation, INTERSIL Application note AN-8831, Oct. 1988 4-3 FRF9150D, FRF9150R, FRF9150H Typical Performance Characteristics 4-4 FRF9150D, FRF9150R, FRF9150H Rad Hard Data Packages - Intersil Power Transistors TXV Equivalent E. Preconditioning Attributes Data Sheet Hi-Rel Lot Traveler HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data 1. Rad Hard TXV Equivalent - Standard Data Package A. Certificate of Compliance B. Assembly Flow Chart C. Preconditioning - Attributes Data Sheet - Attributes Data Sheet F. Group A - Attributes Data Sheet E. Group B - Attributes Data Sheet G. Group B - Attributes Data Sheet F. Group C - Attributes Data Sheet H. Group C - Attributes Data Sheet - Attributes Data Sheet I. Group D - Attributes Data Sheet D. Group A G. Group D 2. Rad Hard TXV Equivalent - Optional Data Package 2. Rad Hard Max. “S” Equivalent - Optional Data Package A. Certificate of Compliance A. Certificate of Compliance B. Assembly Flow Chart B. Serialization Records C. Preconditioning - Attributes Data Sheet - Precondition Lot Traveler - Pre and Post Burn-In Read and Record Data C. Assembly Flow Chart D. Group A - Attributes Data Sheet - Group A Lot Traveler E. Group B - Attributes Data Sheet - Group B Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup B3) - Bond Strength Data (Subgroup B3) - Pre and Post High Temperature Operating Life Read and Record Data (Subgroup B6) F. Group C G. Group D D. SEM Photos and Report E. Preconditioning - Attributes Data Sheet - Hi-Rel Lot Traveler - HTRB - Hi Temp Gate Stress Post Reverse Bias Data and Delta Data - HTRB - Hi Temp Drain Stress Post Reverse Bias Delta Data - X-Ray and X-Ray Report - Attributes Data Sheet - Group C Lot Traveler - Pre and Post Read and Record Data for Intermittent Operating Life (Subgroup C6) - Bond Strength Data (Subgroup C6) - Attributes Data Sheet - Group D Lot Traveler - Pre and Post RAD Read and Record Data F. Group A - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups A2, A3, A4, A5 and A7 Data G. Group B - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups B1, B3, B4, B5 and B6 Data H. Group C - Attributes Data Sheet - Hi-Rel Lot Traveler - Subgroups C1, C2, C3 and C6 Data I. Group D Class S - Equivalents 1. Rad Hard “S” Equivalent - Standard Data Package A. Certificate of Compliance B. Serialization Records C. Assembly Flow Chart D. SEM Photos and Report 4-5 - Attributes Data Sheet - Hi-Rel Lot Traveler - Pre and Post Radiation Data FRF9150D, FRF9150R, FRF9150H TO-254AA 3 LEAD JEDEC TO-254AA HERMETIC METAL PACKAGE INCHES A ØP E SYMBOL A1 Q H1 D 1 2 NOTES 0.249 0.260 6.33 6.60 - 0.050 1.02 1.27 - Øb 0.035 0.045 0.89 1.14 2, 3 D 0.790 0.800 20.07 20.32 - E 0.535 0.545 13.59 13.84 0.150 TYP 0.300 BSC 0.245 0.265 - 3.81 TYP 4 7.62 BSC 4 6.23 6.73 - J1 0.140 0.160 3.56 4.06 4 L 0.520 0.560 13.21 14.22 - ØP 0.139 0.149 3.54 3.78 - Q 0.110 0.130 2.80 3.30 - NOTES: 1. These dimensions are within allowable dimensions of Rev. A of JEDEC outline TO-254AA dated 11-86. 2. Add typically 0.002 inches (0.05mm) for solder coating. 3. Lead dimension (without solder). 4. Position of lead to be measured 0.250 inches (6.35mm) from bottom of dimension D. 5. Die to base BeO isolated, terminals to case ceramic isolated. 6. Controlling dimension: Inch. 7. Revision 1 dated 1-93. 3 e MAX 0.040 e1 Øb MILLIMETERS MIN A H1 L MAX A1 e 0.065 R MAX. TYP. MIN J1 e1 WARNING! BERYLLIA WARNING PER MIL-S-19500 Packages containing beryllium oxide (BeO) shall not be ground, machined, sandblasted, or subject to any mechanical operation which will produce dust containing any beryllium compound. Packages containing any beryllium compound shall not be subjected to any chemical process (etching, etc.) which will produce fumes containing beryllium or its’ compounds. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 4-6 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029