TOSHIBA TLP599G

TLP599G
TOSHIBA Photocoupler Photo Relay
TLP599G
Telecommunication
Data Acquisition
Measurement Instrumentation
Unit in mm
The TOSHIBA TLP599G consists of a gallium arsenide infrared emitting
diode optically coupled to a photo−MOS FET in a six lead plastic DIP
package (DIP6).
The TLP599G is a bi-directional switch which can replace mechanical
relays in many applications.
·
Peak off-state voltage: 400V (min.)
·
On-state current: 120mA (max.) (A connection)
·
On-state resistance: 30Ω (max.) (A connection)
·
Insulation thickness: 0.4mm (max.)
·
Isolation voltage: 2500Vrms (min.)
TOSHIBA
·
UL recognized: UL1577, file no. E67349
·
Trigger LED current (Ta = 25°C)
Classification
(Note 1)
Trigger LED Current
(mA)
@ION = 120mA
Min.
Max.
Marking Of
Classification
(IFT2)
—
2
T2
Standard
—
5
T2, blank
(Note 1): Application type name for certification
test, please use standard product type
name, i.e.
TLP599G (IFT2) :TLP599G
11−7A8
Pin Configuration (top view)
1
6
2
5
3
4
1 : Anode
2 : Cathode
3 : NC
4 : Drain D1
5 : Source
6 : Drain D2
Schematic
1
2
6
5
4
1
2002-09-25
TLP599G
Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
IF
50
mA
∆IF / °C
-0.5
mA / °C
Peak forward current (100 µs pulse, 100 pps)
IFP
1
A
Reverse voltage
VR
5
V
Junction temperature
Tj
125
°C
VOFF
400
V
Forward current
LED
Forward current derating (Ta ≥ 25°C)
Off-state output terminal voltage
A connection
On-state RMS current
120
ION
Detector
B connection
On-state current derating (Ta ≥ 25°C)
C connection
200
A connection
-1.2
-1.5
∆ION / °C
B connection
mA
150
mA / °C
-2.0
C connection
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Operating temperature range
Topr
-40~85
°C
Lead soldering temperature (10 s)
Tsol
260
°C
BVS
2500
Vrms
Isolation voltage (AC, 1 min., R.H.≤ 60%)
(Note 2)
(Note 2): Device considered a two-terminal device: Pins 1, 2 and 3 shorted together, and pins 4, 5 and 6
shorted together.
Recommended Operating Conditions
Characteristic
Symbol
Min.
Typ.
Max.
Unit
Supply voltage
VDD
—
—
320
V
Forward current
IF
7.5
15
25
mA
On-state current
ION
—
—
120
mA
Operating temperature
Topr
-20
—
80
°C
Circuit Connections
1
6
2
5
LOAD
or
3
4
A connection
AC
DC
1
6
2
5
3
4
B connection
2
LOAD
DC
1
6
2
5
LOAD
DC
3
4
C connection
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TLP599G
Individual Electrical Characteristics (Ta = 25°C)
Detector
LED
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Forward voltage
VF
IF = 10 mA
1.0
1.15
1.3
V
Reverse current
IR
VR = 5V
—
—
10
µA
Capacitance
CT
V = 0, f = 1 MHz
—
30
—
pF
Off-state current
IOFF
VOFF = 400 V
—
—
1
µA
Capacitance
COFF
V = 0, f = 1 MHz
—
—
—
pF
Min.
Typ/
Max.
Unit
ION = 120 mA
—
1
5
mA
ION = 120 mA, IF = 10 mA
—
20
30
ION = 150 mA, IF = 10 mA
—
12
20
ION = 200 mA, IF = 10 mA
—
6
10
Min.
Typ.
Max.
Unit
0.8
—
pF
Ω
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Trigger LED current
IFT
A connection
On-state
Resistance
RON
B connection
C connection
Test Condition
Ω
Isolation Characteristics (Ta = 25°C)
Characteristic
Symbol
Capacitance input to output
CS
Isolation resistance
RS
Test Condition
VS = 0, f = 1 MHz
—
VS = 500 V, R.H.≤ 60%
BVS
14
5 ´ 10
10
—
2500
—
—
AC, 1 second (in oil)
—
5000
—
DC, 1 minute (in oil)
—
5000
—
Vdc
Min.
Typ.
Max.
Unit
—
—
2
—
—
2
AC, 1 minute
Isolation voltage
10
Vrms
Switching Characteristics (Ta = 25°C)
Characteristic
Symbol
Turn-on time
ton
Turn-off time
toff
Test Condition
RL = 200Ω
VDD = 20 V, IF = 10 mA
ms
Switching Time Test Circuit
IF
6
1
2
4
RL
VDD
IF
VOUT
VOUT
ton
3
90%
10%
toff
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TLP599G
ION(RMS) – Ta
I F – Ta
300
60
40
20
0
－20
0
20
40
60
80
Ambient temperature Ta
100
(mA)
Allowable forward current
IF (mA)
80
250
On-state current ION(RMS)
100
200
C connection
B connection
150
A connection
100
50
0
－20
120
0
(°C)
20
100
Ta = 25 °C
50
Ta = 25 °C
(mA)
30
1000
500
Forward current IF
Allowable pulse forward current
IFP (mA)
80
IF – VF
100
Pulse width ≦ 100 µs
3000
60
Amebient temperature Ta (°C)
IFP – DR
5000
40
300
100
50
30
10
３
10
5
3
1
0.5
0.3
10－3
10－2
3
10－1
3
0.1
0.6
100
3
0.8
Duty cycle ratio DR
1.0
1.2
Forward voltage
∆VF/∆Ta – IF
1.4
VF
1.6
1.8
(V)
IFP – VFP
1000
IFP (mA)
－2.4
Pulse forward current
Forward voltage temperature
coefficient ∆VF/∆Ta (mA/°C)
－2.8
－2.0
－1.6
－1.2
－0.8
－0.4
0.1
0.3 0.5
1
3
Forward current
5
10
30
500
300
100
50
30
10
Pulse width ≦ 10 µs
5
Repetitive frequency = 100 Hz
3
Ta = 25 °C
1
0.6
50
IF (mA)
1.0
1.4
1.8
2.2
2.6
3.0
Pulse forward voltage VFP (V)
4
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TLP599G
IFT – Ta
P c – Ta
3.0
500
ION = rated
A connection
2.5
400
Relative trigger LED current
IFT / IFT (Ta = 25 °C)
Allowable MOSFET power dissipation
Pc (mW)
A connection
300
200
100
0
－20
2.0
1.5
1.0
0.5
0
20
40
60
Ambient temperature Ta
80
0
100
0
－20
(°C)
(Ω)
On-state resistance RON(RMS)
(mA)
On-state current ION
100
0
－100
0
－2
2
On-state current VON
IF = 10 mA
16 tRON < 1 s
A connection
12
8
4
0
4
0
－20
(V)
20
RL = 200 Ω
(µs)
400 VDD = 20 V
100
Switching time tON, tOFF
(nA)
Off-state current IOFF
80
IF = 7.5 mA
300
50
30
10
5
3
40
60
tON, tOFF – Ta
500
VOFF = 400 V
20
40
Amebient temperature Ta (°C)
500
0
80
ION = Rated
IOFF – Ta
1000
1
－20
60
RON – Ta
20
Ta = 25 °C
IF = 10 mA
－200
－4
40
Amebient temperature Ta (°C)
ION – VON (A connection)
200
20
60
Ambient temperature Ta
80
300
tON
200
0
100
(°C)
tOFF
100
－20
0
20
40
Ambient temperature Ta
5
60
80
(°C)
2002-09-25
TLP599G
RESTRICTIONS ON PRODUCT USE
000707EBC
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc..
· The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this
document shall be made at the customer’s own risk.
· Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes
are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the
products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with
domestic garbage.
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other
rights of the third parties which may result from its use. No license is granted by implication or otherwise under
any intellectual property or other rights of TOSHIBA CORPORATION or others.
· The information contained herein is subject to change without notice.
6
2002-09-25