MOTOROLA TIP140

Order this document
by TIP140/D
SEMICONDUCTOR TECHNICAL DATA
" " $
# !!" !
. . . designed for general–purpose amplifier and low frequency switching applications.
• High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V
• Collector–Emitter Sustaining Voltage — @ 30 mA
VCEO(sus) = 60 Vdc (Min) — TIP140, TIP145
VCEO(sus) = 80 Vdc (Min) — TIP141, TIP146
VCEO(sus) = 100 Vdc (Min) — TIP142, TIP147
• Monolithic Construction with Built–In Base–Emitter Shunt Resistor
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v
MAXIMUM RATINGS
Symbol
TIP140
TIP145
TIP141
TIP146
TIP142
TIP147
Unit
VCEO
60
80
100
Vdc
Collector–Base Voltage
VCB
60
80
100
Vdc
Emitter–Base Voltage
VEB
5.0
Vdc
Collector Current — Continuous
Peak (1)
IC
10
15
Adc
Base Current — Continuous
IB
0.5
Adc
Total Device Dissipation
@ TC = 25_C
PD
125
Watts
TJ, Tstg
– 65 to + 150
_C
Rating
Collector–Emitter Voltage
Operating and Storage Junction
Temperature Range
*Motorola Preferred Device
10 AMPERE
DARLINGTON
COMPLEMENTARY SILICON
POWER TRANSISTORS
60 – 100 VOLTS
125 WATTS
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
RθJC
1.0
_C/W
Thermal Resistance, Case to Ambient
RθJA
35.7
_C/W
(1) 5 ms,
CASE 340D–01
10% Duty Cycle.
DARLINGTON SCHEMATICS
NPN
TIP140
TIP141
TIP142
COLLECTOR
BASE
PNP
TIP145
TIP146
TIP147
COLLECTOR
BASE
≈ 8.0 k
≈ 40
EMITTER
≈ 8.0 k
≈ 40
EMITTER
Preferred devices are Motorola recommended choices for future use and best overall value.
 Motorola, Inc. 1995
Motorola Bipolar Power Transistor Device Data
1
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
60
80
100
—
—
—
—
—
—
—
—
—
—
—
—
2.0
2.0
2.0
—
—
—
—
—
—
1.0
1.0
1.0
—
—
20
1000
500
—
—
—
—
—
—
—
—
2.0
3.0
Unit
OFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
(IC = 30 mA, IB = 0)
VCEO(sus)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Collector Cutoff Current
(VCE = 30 Vdc, IB = 0)
(VCE = 40 Vdc, IB = 0)
(VCE = 50 Vdc, IB = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Collector Cutoff Current
(VCB = 60 V, IE = 0)
(VCB = 80 V, IE = 0)
(VCB = 100 V, IE = 0)
TIP140, TIP145
TIP141, TIP146
TIP142, TIP147
Vdc
ICEO
mA
ICBO
Emitter Cutoff Current (VBE = 5.0 V)
mA
IEBO
mA
ON CHARACTERISTICS (1)
DC Current Gain
(IC = 5.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
hFE
—
Collector–Emitter Saturation Voltage
(IC = 5.0 A, IB = 10 mA)
(IC = 10 A, IB = 40 mA)
VCE(sat)
Vdc
Base–Emitter Saturation Voltage
(IC = 10 A, IB = 40 mA)
VBE(sat)
—
—
3.5
Vdc
Base–Emitter On Voltage
(IC = 10 A, VCE = 4.0 Vdc)
VBE(on)
—
—
3.0
Vdc
td
—
0.15
—
µs
tr
—
0.55
—
µs
ts
—
2.5
—
µs
tf
—
2.5
—
µs
SWITCHING CHARACTERISTICS
Resistive Load (See Figure 1)
Delay Time
Rise Time
Storage Time
(VCC = 30 V, IC = 5.0 A,
IB = 20 mA, Duty Cycle
2.0%,
IB1 = IB2, RC & RB Varied, TJ = 25_C)
Fall Time
(1) Pulse Test: Pulse Width = 300 µs, Duty Cycle
2.0%.
10
VCC
– 30 V
V2
approx
+12 V
RB
51
0
D1
≈ 8.0 k
≈ 40
ts
SCOPE
2.0
tf
1.0
tr
0.5
V1
appox.
– 8.0 V
+ 4.0 V
25 µs
tr, tf ≤ 10 ns
DUTY CYCLE = 1.0%
for td and tr, D1 is disconnected
and V2 = 0
For NPN test circuit reverse diode and voltage polarities.
Figure 1. Switching Times Test Circuit
2
PNP
NPN
5.0
t, TIME ( µs)
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, eg:
1N5825 USED ABOVE IB ≈ 100 mA
RC
MSD6100 USED BELOW IB ≈ 100 mA
TUT
td @ VBE(off) = 0
0.2
0.1
0.2
0.5
1.0
3.0
5.0
IC, COLLECTOR CURRENT (AMP)
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
10
Figure 2. Switching Times
Motorola Bipolar Power Transistor Device Data
20
TYPICAL CHARACTERISTICS
NPN
TIP140, TIP141, TIP142
PNP
TIP145, TIP146, TIP147
20,000
TJ = 150°C
TJ = 150°C
100°C
25°C
2000
– 55°C
1000
500
100°C
10,000
hFE , DC CURRENT GAIN
hFE , DC CURRENT GAIN
5000
7000
25°C
5000
– 55°C
3000
2000
VCE = 4.0 V
300
0.5
VCE = 4.0 V
1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)
7.0
1000
0.5
10
0.7
1.0
2.0
3.0 4.0 5.0
IC, COLLECTOR CURRENT (AMPS)
7.0
10
5.0
3.0
2.0
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA
0.7
0.5
– 75
– 50
– 25
0
25
50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)
VCE(SAT) , COLLECTOR–EMITTER SATURATION VOLTAGE (VOLTS)
Figure 3. DC Current Gain versus Collector Current
5.0
3.0
2.0
IC = 10 A, IB = 4.0 mA
IC = 5.0 A, IB = 10 mA
1.0
IC = 1.0 A, IB = 2.0 mA
0.7
0.5
– 75 – 50
– 25
0
25 50
75 100 125
TJ, JUNCTION TEMPERATURE (°C)
150
175
4.0
3.6
VBE, BASE–EMITTER VOLTAGE (VOLTS)
VBE, BASE–EMITTER VOLTAGE (VOLTS)
Figure 4. Collector–Emitter Saturation Voltage
VCE = 4.0 V
3.2
2.8
2.4
IC = 10 A
2.0
1.6
5.0 A
1.2
0.8
– 75
1.0 A
– 25
25
75
125
175
4.0
3.6
VCE = 4.0 V
3.2
2.8
2.4
IC = 10 A
2.0
1.6
5.0 A
1.2
0.8
– 75
TJ, JUNCTION TEMPERATURE (°C)
1.0 A
– 25
25
75
175
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. Base–Emitter Voltage
Motorola Bipolar Power Transistor Device Data
3
ACTIVE–REGION SAFE OPERATING AREA
There are two limitations on the power handling ability of a
transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 6 is based on T J(pk) = 150_C; TC is
variable depending on conditions. At high case temperatures, thermal limitations will reduce the power that can be
handled to values less than the limitations imposed by
second breakdown.
IC, COLLECTOR CURRENT (AMPS)
IC, COLLECTOR CURRENT (AMP) (mA)
20
10
7.0
5.0
3.0
2.0
dc
TJ = 150°C
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMITATION @ TC = 25°C
1.0
TIP140, 145
TIP141, 146
TIP142, 147
20
30
50
15
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
0.2
10
15
10
7.0
5.0
100 mJ
2.0
1.0
0.5 1.0
2.0
5.0
10 20
L, UNCLAMPED INDUCTIVE LOAD (mH)
100
Figure 6. Active–Region Safe Operating Area
INPUT
VOLTAGE
COLLECTOR
CURRENT
MPS–U52
100 mH
RBB1
INPUT
TUT
1.5 k
50
VCC = 20 V
IC
MONITOR
RBB2
= 100
VBB2 = 0
VBB1 = 10 V
100
Figure 7. Unclamped Inductive Load
VCE MONITOR
50
50
w ≈ 7.0 ms (SEE NOTE 1)
5.0 V
0
100 ms
0
1.42 A
VCE(sat)
– 20 V
COLLECTOR
VOLTAGE
RS = 0.1
V(BR)CER
TEST CIRCUIT
NOTE 1: Input pulse width is increased until ICM = 1.42 A.
NOTE 2: For NPN test circuit reverse polarities.
VOLTAGE AND CURRENT WAVEFORMS
5.0
100
70
50
VCE = 10 V
IC = 1.0 A
TJ = 25°C
PNP
PNP
NPN
20
10
7.0
5.0
NPN
2.0
1.0
1.0
4.0
3.0
2.0
1.0
0
2.0
3.0
5.0
f, FREQUENCY (MHz)
7.0
Figure 9. Magnitude of Common Emitter
Small–Signal Short–Circuit Forward
Current Transfer Ratio
4
PD, POWER DISSIPATION (WATTS)
hfe , SMALL–SIGNAL FORWARD CURRENT
TRANSFER RATIO
Figure 8. Inductive Load
10
0
40
80
120
160
TA, FREE–AIR TEMPERATURE (°C)
Figure 10. Free–Air Temperature
Power Derating
Motorola Bipolar Power Transistor Device Data
200
PACKAGE DIMENSIONS
C
Q
B
U
S
E
DIM
A
B
C
D
E
G
H
J
K
L
Q
S
U
V
4
A
L
1
2
3
K
D
J
H
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
G
MILLIMETERS
MIN
MAX
19.00
19.60
14.00
14.50
4.20
4.70
1.00
1.30
1.45
1.65
5.21
5.72
2.60
3.00
0.40
0.60
28.50
32.00
14.70
15.30
4.00
4.25
17.50
18.10
3.40
3.80
1.50
2.00
STYLE 1:
PIN 1.
2.
3.
4.
INCHES
MIN
MAX
0.749
0.771
0.551
0.570
0.165
0.185
0.040
0.051
0.058
0.064
0.206
0.225
0.103
0.118
0.016
0.023
1.123
1.259
0.579
0.602
0.158
0.167
0.689
0.712
0.134
0.149
0.060
0.078
BASE
COLLECTOR
EMITTER
COLLECTOR
CASE 340D–01
TO–218AC
ISSUE A
Motorola Bipolar Power Transistor Device Data
5
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6
◊
Motorola Bipolar Power Transistor Device Data
*TIP140/D*
TIP140/D