T R I Q U I N T S E M I TGA8310-SCC C O N D U C Low-Noise Amplifier ● ● ● ● ● ● 2 to 20- GHz Frequency Range T O R , I N C . 8310 3.5- dB Noise Figur e Midband 1.4:1 Typical Input/Output SWR 17.5- dBm Output Power at 1- dB Gain Compr ession 9- dB Typical Gain 4,115 x 2,362 x 0,102 mm (0.162 x 0.093 x 0.004 in.) PHOTO ENLARGEMENT DESCRIPTION The TriQuint TGA8310 - SCC is a monolithic low - noise distributed amplifier, which operates from 2 to 20- GHz. Noise figure is typically 4 - dB. Nine 122- µm gatewidth FETs typically provide 17.5-dBm of output power at 1 - dB gain compression and 9- dB typical small signal gain. Typical input return loss is 17-dB from 2 to 20-GHz. Typical output return loss is 20-dB. Ground is provided to the circuitry through vias to the backside metallization. The TGA8310 - SCC low - noise distributed amplifier is suitable for a variety of wide - band electronic warfare systems such as radar warning receivers, electronic counter-measures, decoys, jammers, and phased array systems. Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attachment methods as well as the ther mocompression and thermosonic wir e- bonding processes. The TGA8310 - SCC is supplied in chip form and is readily assembled using automated equipment. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8310-SCC 14 TYPICAL SMALL-SIGNAL POWER GAIN VCTRL = 1.5 V V = 1.5 V = 60 mA I +CTRL I + = 60 mA = 25° 25°C TTA = C 12 A Gain (dB) 10 8 6 4 2 VVDVd 5V V D= = =5 5V ++ = 8 V == 8V8 V VVV+ 0 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) y g 8 TYPICAL NOISE FIGURE VVCTRL = 1.5 V CTRL = 1.5 V II+ +==60 60mA mA TTAA = 25°C 25° C 7 Noise Figure (dB) 6 5 4 3 2 1 V VdD===5V Vd 55VV V ++ ===8V V+ 88VV V 0 2 4 6 8 10 12 14 16 18 Frequency (GHz) 22 P1dB 20 Output Power (dBm) TYPICAL OUTPUT POWER VVCTRL = 1.5 V CTRL = 1.5 V I +I +==60 60mA mA TTA A== 25°C 25° C 18 16 14 12 VVdD==5V Vd = 55VV V ++===8V V V+ 88V V 10 2 4 6 8 10 12 14 16 18 20 Frequency (GHz) TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 2 TGA8310-SCC 0 TYPICAL INPUT RETURN LOSS VCTRL 1.5VV CTRL==1.5 V + = 60 60 mA mA II + = TA == 25° C 25°C Input Return Loss (dB) 6 12 18 24 30 VD==5 5V V Vd V += =8 8 V+ VV 36 2 5 8 11 14 17 20 Frequency (GHz) 0 TYPICAL OUTPUT RETURN LOSS VCTRL = 1.5 V V+CTRL = 1.5 V I + = 60 mA I = 60 mA 25°C TTAA==25° C Output Return Loss (dB) 6 12 18 24 30 36 VD ==55VV Vd V +==88V V V+ 42 2 5 8 11 14 17 20 Frequency (GHz) 3 TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8310-SCC ABSOLUTE MAXIMUM RATINGS Drain supply voltage, VD ........................................................................................................................ 9 V Positive supply voltage, V + .................................................................................................................. 12 V Positive supply voltage range with respect to negative supply voltage, V + - VG1 .............................. 0 V to 13 V Positive supply voltage range with respect to gain control voltage, VCTR L - V + .............................. 0 V to -13 V Negative supply voltage range, VG1 .............................................................................................. - 5 V to 0 V Gain control voltage range, V CTRL ................................................................................................ - 5 V to 4 V Drain supply current, I D ........................................................................................................................ IDSS Positive supply current, I+ .............................................................................................................. 188 mA Power dissipation, PD, at (or below) 25 C base-plate temperature* ...................................................... 2.6 W Input continuous wave power, PIN .................................................................................................... 23 dBm Operating channel temperature, T CH** .............................................................................................. 150 C Mounting temperatur e (30 sec), TM .................................................................................................... 320 C Storage temperatur e range, TSTG ............................................................................................ - 65 to 150 C Ratings over operating channel temperature range, T CH (unless otherwise noted) Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “RF Characteristics” is not implied. Exposure to absolute maximum rated conditions for extended periods may af fect device reliability. * For operation above 25 C base - plate temperature, derate linearly at the rate of 5.5 mW/ C. **Operating channel temperature directly affects the device MTTF . For maximum life, it is recommended that channel temperature be maintained at the lowest possible level. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 4 TGA8310-SCC TYPICAL S -PARAMETERS Frequency S 11 S 21 S 12 S 22 GAIN (GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB) 2.0 0.31 -154 3.32 119 0.009 61 0.22 -19 10.4 2.5 0.26 -175 3.23 96 0.010 32 0.19 -62 10.2 3.0 0.21 169 3.13 75 0.011 14 0.17 -98 9.9 3.5 4.0 0.18 0.15 155 145 3.06 3.00 54 35 0.012 0.013 -6 -23 0.16 0.14 -132 -162 9.7 9.6 4.5 0.12 137 2.97 16 0.014 -42 0.12 169 9.4 5.0 0.10 134 2.93 -3 0.014 -59 0.10 143 9.3 5.5 0.08 135 2.93 -22 0.016 -76 0.07 116 9.3 6.0 0.07 143 2.92 -41 0.018 -96 0.04 87 9.3 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 0.07 0.08 0.10 0.12 0.13 0.14 0.14 0.14 0.14 0.12 0.11 0.08 0.07 0.06 0.07 0.09 0.11 0.12 0.12 0.13 0.14 0.12 0.09 153 162 162 157 152 145 137 127 116 109 100 99 107 128 147 150 144 130 121 112 99 87 81 2.93 2.94 2.95 2.91 2.90 2.85 2.83 2.80 2.77 2.80 2.80 2.80 2.80 2.79 2.79 2.77 2.74 2.73 2.70 2.65 2.66 2.70 2.71 -60 -79 -99 -118 -138 -157 -176 165 146 127 107 88 68 48 28 8 -13 -33 -54 -74 -94 -115 -138 0.019 0.021 0.022 0.024 0.025 0.027 0.028 0.029 0.029 0.032 0.032 0.033 0.035 0.035 0.037 0.038 0.039 0.041 0.044 0.046 0.049 0.052 0.056 -115 -133 -153 -170 173 156 140 123 109 89 73 56 37 18 0 -21 -41 -58 -76 -96 -115 -134 -155 0.02 0.02 0.04 0.05 0.05 0.05 0.05 0.05 0.06 0.07 0.08 0.08 0.07 0.05 0.03 0.04 0.08 0.12 0.16 0.18 0.18 0.16 0.13 44 -92 -143 -170 164 133 95 52 17 -25 -54 -82 -109 -141 153 53 13 -14 -42 -70 -99 -131 -166 9.3 9.4 9.4 9.3 9.2 9.1 9.1 8.9 8.8 8.9 9.0 8.9 8.9 8.9 8.9 8.8 8.7 8.7 8.6 8.5 8.5 8.6 8.7 18.0 18.5 19.0 19.5 20.0 0.08 0.07 0.04 0.04 0.03 95 79 88 92 86 2.61 2.68 2.67 2.65 2.64 -159 -180 156 133 110 0.053 0.056 0.058 0.054 0.051 -175 168 142 119 102 0.08 0.13 0.24 0.37 0.34 145 57 -25 -87 -149 8.3 8.6 8.5 8.5 8.4 TA = 25°C, VD = 5 V, VCTRL = 1.5 V, I + = 60 mA Reference planes for S -parameter data include bond wires as specified in the “Recommended Assembly Diagram.” The S -parameters are also available on floppy disk and the world wide web. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 5 TGA8310-SCC TYPICAL S -PARAMETERS Frequency S 11 S 21 S 12 S 22 GAIN (GHz) MAG ANG(°) MAG ANG(°) MAG ANG(°) MAG ANG(°) (dB) 2.0 0.28 -155 2.76 108 0.007 37 0.12 -133 8.8 2.5 0.23 -178 2.75 90 0.008 19 0.08 -152 8.8 3.0 3.5 0.20 0.17 165 151 2.74 2.77 72 53 0.010 0.011 4 -12 0.05 0.04 180 134 8.8 8.8 4.0 0.14 140 2.79 35 0.012 -28 0.04 86 8.9 4.5 0.11 133 2.83 16 0.013 -45 0.05 55 9.0 5.0 0.08 132 2.84 -3 0.015 -63 0.05 32 9.1 5.5 6.0 0.06 0.06 138 154 2.87 2.88 -22 -41 0.016 0.018 -80 -99 0.04 0.03 8 -28 9.2 9.2 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5 13.0 13.5 14.0 14.5 15.0 15.5 16.0 16.5 17.0 17.5 18.0 18.5 19.0 19.5 20.0 0.06 0.08 0.09 0.12 0.13 0.15 0.15 0.14 0.13 0.11 0.08 0.06 0.04 0.03 0.05 0.06 0.08 0.10 0.10 0.09 0.09 0.08 0.06 0.06 0.09 0.10 0.13 0.15 166 165 165 160 154 148 141 131 122 112 105 105 115 147 163 161 150 133 116 103 90 65 45 81 63 72 85 96 2.90 2.88 2.91 2.88 2.87 2.84 2.81 2.78 2.76 2.78 2.79 2.76 2.77 2.76 2.76 2.75 2.74 2.72 2.71 2.60 2.54 2.52 2.49 2.39 2.50 2.45 2.34 2.20 -60 -79 -98 -118 -137 -157 -176 165 146 128 108 88 69 49 29 8 -12 -33 -54 -76 -96 -117 -139 -158 -179 158 133 110 0.019 0.021 0.022 0.024 0.026 0.027 0.028 0.029 0.030 0.031 0.032 0.032 0.033 0.034 0.035 0.037 0.039 0.040 0.042 0.043 0.046 0.048 0.050 0.047 0.051 0.054 0.053 0.053 -117 -136 -152 -171 172 156 140 124 104 91 73 55 38 20 1 -19 -39 -59 -78 -96 -112 -131 -151 -170 177 155 132 112 0.03 0.04 0.05 0.06 0.05 0.05 0.06 0.07 0.06 0.07 0.06 0.06 0.05 0.05 0.04 0.02 0.01 0.01 0.03 0.06 0.07 0.09 0.11 0.13 0.12 0.12 0.15 0.21 -82 -128 -157 173 143 111 79 52 27 1 -29 -58 -85 -113 -147 -173 163 -17 -37 -60 -76 -91 -112 -129 -138 -135 -120 -118 9.2 9.2 9.3 9.2 9.2 9.1 9.0 8.9 8.8 8.9 8.9 8.8 8.9 8.8 8.8 8.8 8.7 8.7 8.7 8.3 8.1 8.0 7.9 7.6 8.0 7.8 7.4 6.8 TA = 25°C, V + = 8 V, VCTRL = 1.5 V, I + = 60 mA Reference planes for S -parameter data include bond wires as specified in the “ Recommended Assembly Diagram.” - 6 TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8310-SCC RF CHARACTERISTICS PARAMETER GP TEST CONDITIONS Small-signal power gain f = 2 t o 20 GHz f = 2 GHz f = 6 GHz NF Noise figure f = 10 GHz f = 18 GHz SWR(in) Input standing wave ratio f = 2 to 20 GHz SWR(out) Output standing wave ratio f = 2 to 20 GHz P 1dB Output power at 1-dB gain compression f = 2 to 20 GHz TYP UNIT VD = 5 V V+ = 8 V 9.0 8.5 dB VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V 4.6 4.4 2.7 2.5 3.1 V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V VD = 5 V V+ = 8 V 5.4 1.4:1 1.4:1 1.4:1 1.4:1 17.5 16.5 29.5 27.0 27.5 26.5 27.0 32.5 29.5 3.2 5.6 f = 2 G Hz f = 6 G Hz IP3 Output third–order intercept point f = 9 GHz f = 1 2 G Hz f = 1 8 G Hz f o = 2 GHz VD = 5 V Output second–order intercept point f o = 4 GHz f o = 6 GHz f o = 9 GHz f o = 2 GHz f o = 4 GHz fo = 6 GHz VD = 5 V Output third harmonic at 1–dB gain compression fo fo fo fo Output second harmonic at 1–dB gain compression VD = 5 V, VCTRL = 1.5 V, I+ = 2 GHz = 4 GHz = 6 GHz dB --dBm dBm dBm 29.0 28.0 -29.0 VD = 5 V -24.5 -19.5 -18.0 -15.0 -13.5 VD = 5 V = 9 GHz dBc* dBc* -15.5 = 60 mA, TA = 25°C * Unit dBc applies to decibels with r espect to the carrier or fundamental fr equency, fo. DC CHARACTERISTICS PARAMETER TEST CONDITIONS MIN MAX UNIT I DSS Zero–gate–voltage drain current at saturation VDS = 0.5 V to 3.5 V, VGS = 0 97 292 mA TA = 25°C VDS for I DSS is the drain voltage between 0.5 V and 3.5 V at which drain current is highest at dc autoprobe. THERMAL INFORMATION PARAMETER R JC Thermal resistance (channel to backside) TEST CONDITIONS V CTRL = 1.5 V, I + = 60 mA V+ = 8 V VD = 5 V NOM UNIT 12 20 °C/W 7 TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com TGA8310-SCC EQUIVALENT SCHEMATIC V+ VD RF Output 122 m 9 places VCTRL RF Input VG1 TYPICAL BIAS NETWORK V += 8 V V CT RL = 1 . 5 V CBypass CBypass 5 3 RF Input 1,2 6,7 TGA8310 RF Output 8 VG1 CBypass (V+ = 8 V) V CT RL = 1 . 5 V V D= 5 V TYPICAL BIAS NETWORK CBypass CBypass LBias 4 3 RF Input 1,2 6,7 TGA8310 RF Output 8 VG1 CBypass (VD = 5 V) TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 8 TGA8310-SCC RECOMMENDED ASSEMBLY DIAGRAM 8 Volt Bias V+ VCTRL 100pF 0.01 F RF Input RF Output 100pF VG1 (V + = 8 V) RF connections: Bond using two 1 -mil diameter, 20 to 25 -mil length gold bond wires at both RF Input and RF Output for optimum RF performance. Close placement of exter nal components is essential to stability. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 9 TGA8310-SCC RECOMMENDED ASSEMBLY DIAGRAM 5 Volt Bias VCTRL VD 2nH 100pF 0.01 F RF Input RF Output 100pF VG1 (VD = 5 V) The 2 -nH thin -film network coil is TI par t number 3022039 -1. RF connections: Bond using two 1 -mil diameter, 20 to 25 -mil length gold bond wires at both RF Input and RF Output for optimum RF per formance. Close placement of exter nal components is essential to stability. TriQuint Semiconductor, Inc. • Texas Facilities • (972) 995-8465 • www.triquint.com 10 TGA8310-SCC 0,1524 (0.0060) MECHANICAL DRAWING 0,5944 (0.0234) 1,7170 (0.0676) 3,9746 (0.1564) 2,3622 (0.0930) 1,9456 (0.0766) 5 1,7882 (0.0704) 4 1,2370 (0.0487) 3 0,9423 (0.0371) 0,7264 (0.0286) 2 6 1 7 8 0,9119 (0.0359) 0,6960 (0.0274) 0,2515 (0.0099) 0 0 0,1397 (0.0055) 2,4155 (0.0951) 4,1148 (0.1620) Units: millimeters (inches) Thickness: 0,1016 (0.004) (r eference only) Chip edge to bond pad dimensions are shown to center of bond pad. Chip size ±0,0508 (0.002) Bond Bond Bond Bond Bond Bond Bond Bond TriQuint Semiconductor, Inc. • Texas Facilities pad pad pad pad pad pad pad pad #1 #2 #3 #4 #5 #6 #7 #8 (RF Input): (RF Input): (VCTRL): (VD): (V +): (RF Output): (RF Output): (VG1): • (972) 995-8465 0,0940 x 0,0991 (0.0037 x 0.0039) 0,0940 x 0,0991 (0.0037 x 0.0039) 0,1016 x 0,1524 (0.0040 x 0.0060) 0,1321 x 0,2108 (0.0052 x 0.0083) 0,2032 x 0,1016 (0.0080 x 0.0040) 0,0940 x 0,0991 (0.0037 x 0.0039) 0,0940 x 0,0991 (0.0037 x 0.0039) 0,0965 x 0,0965 (0.0038 x 0.0038) • www.triquint.com 11