INTEGRATED CIRCUITS DATA SHEET TDA1555Q 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector Product specification File under Integrated Circuits, IC01 May 1992 Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector TDA1555Q GENERAL DESCRIPTION The TDA1555Q is an integrated class-B output amplifier in a 17-lead single-in-line (SIL) plastic power package. The circuit contains 4 x 11 W single-ended or 2 x 22 W bridge amplifiers. The device is primarily developed for car radio applications. Features • Thermally protected • Requires very few external components • Reverse polarity safe • Flexibility in use − Quad single-ended or stereo BTL • Capability to handle high energy on outputs (VP = 0 V) • High output power • Protected against electrostatic discharge • Low offset voltage at outputs (important for BTL) • No switch-on/switch-off plop • Fixed gain • Low thermal resistance • Good ripple rejection • Identical inputs (inverting and non-inverting) • Mute/stand-by switch • Flexible leads • Load dump protection • Distortion detector. • AC and DC short-circuit-safe to ground and VP QUICK REFERENCE DATA PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply voltage range VP 6.0 14.4 18.0 V Repetitive peak output current IORM − − 4 A Total quiescent current Itot − 80 160 mA Stand-by current Isb − 0.1 100 µA Po 20 22 − W RR 48 − − dB operating Stereo BTL application Output power RL = 4 Ω; THD = 10% Supply voltage ripple rejection Noise output voltage Vno(rms) − 70 − µV Input impedance |ZI| 25 30 38 kΩ DC output offset voltage |∆VO| − − 100 mV Po − 6 − W Po − 11 − W RR 48 − − dB (RMS value) RS = 0 Ω Quad single-ended application Output power THD = 10% RL = 4 Ω RL = 2 Ω Supply voltage ripple rejection Noise output voltage (RMS value) RS = 0 Ω Input impedance Vno(rms) − 50 − µV |ZI| 50 60 75 kΩ PACKAGE OUTLINE 17-lead SIL-bent-to-DIL; plastic power (SOT243R); SOT243-1; 1996 July 23. May 1992 2 Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector Fig.1 Block diagram. May 1992 3 TDA1555Q Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector TDA1555Q PINNING 1 NINV1 non-inverting input 1 9 n.c. not connected 2 INV1 inverting input 1 10 OUT3 output 3 3 GND ground (signal) 11 GND2 power ground 2 (substrate) 4 RR supply voltage ripple rejection 12 OUT4 output 4 5 VP1 positive supply voltage 1 13 VP2 positive supply voltage 2 6 OUT1 output 1 14 M/SS mute/stand-by switch 7 GND1 power ground 1 (substrate) 15 DD distortion detector 8 OUT2 output 2 16 INV2 inverting input 2 17 NINV2 non-inverting input 2 FUNCTIONAL DESCRIPTION The TDA1555Q contains four identical amplifiers with differential input stages (two inverting and two non-inverting) and can be used for single-ended or bridge applications. The gain of each amplifier is fixed at 20 dB (26 dB in BTL). Special features of this device are: Mute/stand-by switch • low stand-by current (< 100 µA) • low mute/stand-by switching current (low cost supply switch) • mute facility Distortion detector • At onset of clipping of one or more channels the distortion detector (pin 15) becomes active. This information can be used to drive a sound processor or DC volume control to decrease the input signal and so limit distortion. RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) PARAMETER CONDITIONS SYMBOL MIN. MAX. UNIT Supply voltage operating VP − 18 V non-operating VP − 30 V VP − 45 V Non-repetitive peak output current IOSM − 6 A Repetitive peak output current IORM − 4 A Storage temperature range Tstg −55 + 150 °C Junction temperature Tj − 150 °C AC and DC short-circuit-safe voltage VPSC − 18 V load dump protected during 50 ms; tr ≥ 2.5 ms Energy handling capability at outputs Total power dissipation May 1992 − 200 mJ VPR − 6 V Ptot − 60 W VP = 0 V Reverse polarity see Fig.2 4 Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector TDA1555Q Fig.2 Power derating curve. DC CHARACTERISTICS VP = 14.4 V; Tamb = 25 °C; measurements taken using Fig.4; unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Supply Supply voltage range note 1 VP 6.0 14.4 18.0 V Itot − 80 160 mA VO − 6.9 − V |∆VO| − − 100 mV Switch-on voltage level VON 8.5 − − V Mute condition Vmute 3.3 − 6.4 V VO − − 2 mV |∆VO| − − 100 mV Stand-by condition Vsb 0 − 2 V DC current in stand-by condition Isb − − 100 µA Switch-on current Isw − 12 40 µA Total quiescent current DC output voltage note 2 DC output offset voltage Mute/stand-by switch Output signal in mute position VI = 1 V (max.); f = 1 kHz DC output offset voltage (between pins 6 to 8 and 10 to 12) May 1992 5 Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector TDA1555Q AC CHARACTERISTICS VP = 14.4 V; RL = 4 Ω; f = 1 kHz; Tamb = 25 °C; measurements taken using Fig.3 for stereo BTL application and Fig.4 for quad single-ended application unless otherwise specified PARAMETER CONDITIONS SYMBOL MIN. TYP. MAX. UNIT Stereo BTL application 17 − W 20 22 − W − 12 − W Po − 17 − W THD − 0.1 − % Bw − 20 to 15 000 − Hz fL − 45 − Hz Po 15 THD = 10% Po THD = 0.5% Po THD = 10% Total harmonic distortion Po = 1 W Power bandwidth THD = 0.5% Output power THD = 0.5% Output power at VP = 13.2 V Po = −1 dB w.r.t. 15 W Low frequency roll-off note 3 −1 dB fH 20 − − kHz Gv 25 26 27 dB ON RR 48 − − dB mute RR 48 − − dB stand-by RR 80 − − dB |Zi| 25 30 38 kΩ RS = 0 Ω; note 5 Vno(rms) − 70 − µV ON RS = 10 kΩ; note 5 Vno(rms) − 100 200 µV mute notes 5 and 6 Vno(rms) − 60 − µV RS = 10 kΩ α 40 − − dB High frequency roll-off −1 dB Closed loop voltage gain Supply voltage ripple rejection note 4 Input impedance Noise output voltage (RMS value) ON Channel separation Channel unbalance Distortion detector May 1992 IDD = 50 µA 6 |∆Gv| − − 1 dB THD 2 − 5 % Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector PARAMETER CONDITIONS TDA1555Q SYMBOL MIN. TYP. MAX. UNIT Quad single-ended application Output power note 7 THD = 0.5% Po 4 5 − W THD = 10% Po 5.5 6 − W THD = 0.5% Po 7.5 8.5 − W THD = 10% Po 10 11 − W Total harmonic distortion Po = 1 W THD − 0.1 − % Low frequency roll-off note 3 −3 dB fL − 45 − Hz −1 dB fH 20 − − kHz Gv 19 20 21 dB ON RR 48 − − dB mute RR 48 − − dB stand-by RR 80 − − dB |Zi| 50 60 75 kΩ RS = 0 Ω; note 5 Vno(rms) − 50 − µV ON RS = 10 kΩ; note 5 Vno(rms) − 70 100 µV mute notes 5 and 6 Vno(rms) − 50 − µV RS = 10 kΩ α 40 − − dB Output power at RL = 2 Ω High frequency roll-off note 7 Closed loop voltage gain Supply voltage ripple rejection note 4 Input impedance Noise output voltage (RMS value) ON Channel separation Channel unbalance Distortion detector IDD = 50 µA |∆Gv| − − 1 dB THD 2 − 5 % Notes to the characteristics 1. The circuit is DC adjusted at VP = 6 V to 18 V and AC operating at VP = 8.5 to 18 V. 2. At 18 V < VP < 30 V the DC output voltage ≤ VP/2. 3. Frequency response externally fixed. 4. Ripple rejection measured at the output with a source impedance of 0 Ω (maximum ripple amplitude of 2 V) and a frequency between 100 Hz and 10 kHz. 5. Noise voltage measured in a bandwidth of 20 Hz to 20 kHz. 6. Noise output voltage independent of RS (VI = 0 V). 7. Output power is measured directly at the output pins of the IC. May 1992 7 Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector APPLICATION INFORMATION Fig.3 Stereo BTL application circuit diagram. May 1992 8 TDA1555Q Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector Fig.4 Quad single-ended application circuit diagram. May 1992 9 TDA1555Q Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector TDA1555Q PACKAGE OUTLINE DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm) SOT243-1 non-concave Dh x D Eh view B: mounting base side d A2 B j E A L3 L Q c 1 17 e1 Z bp e e2 m w M 0 5 v M 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A2 bp c D (1) d Dh E (1) e mm 17.0 15.5 4.6 4.2 0.75 0.60 0.48 0.38 24.0 23.6 20.0 19.6 10 12.2 11.8 2.54 e1 e2 1.27 5.08 Eh j L L3 m Q v w x Z (1) 6 3.4 3.1 12.4 11.0 2.4 1.6 4.3 2.1 1.8 0.8 0.4 0.03 2.00 1.45 Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 92-11-17 95-03-11 SOT243-1 May 1992 EUROPEAN PROJECTION 10 Philips Semiconductors Product specification 4 x 11 W single-ended or 2 x 22 W power amplifier with distortion detector TDA1555Q The device may be mounted up to the seating plane, but the temperature of the plastic body must not exceed the specified maximum storage temperature (Tstg max). If the printed-circuit board has been pre-heated, forced cooling may be necessary immediately after soldering to keep the temperature within the permissible limit. SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. Repairing soldered joints Apply a low voltage soldering iron (less than 24 V) to the lead(s) of the package, below the seating plane or not more than 2 mm above it. If the temperature of the soldering iron bit is less than 300 °C it may remain in contact for up to 10 seconds. If the bit temperature is between 300 and 400 °C, contact may be up to 5 seconds. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our “IC Package Databook” (order code 9398 652 90011). Soldering by dipping or by wave The maximum permissible temperature of the solder is 260 °C; solder at this temperature must not be in contact with the joint for more than 5 seconds. The total contact time of successive solder waves must not exceed 5 seconds. DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. May 1992 11