Previous Datasheet Index Next Data Sheet DISCRETE POWER DIODES and THYRISTORS DATA BOOK To Order Previous Datasheet Index Next Data Sheet Bulletin I25174/A ST223C..C SERIES INVERTER GRADE THYRISTORS Hockey Puk Version Features Metal case with ceramic insulator International standard case TO-200AB (A-PUK) All diffused design 390A Center amplifying gate Guaranteed high dV/dt Guaranteed high dI/dt High surge current capability Low thermal impedance High speed performance Typical Applications Inverters Choppers Induction heating case style TO-200AB (A-PUK) All types of force-commutated converters Major Ratings and Characteristics Parameters ST223C..C Units 390 A 55 °C 745 A 25 °C @ 50Hz 5850 A @ 60Hz 6130 A @ 50Hz 171 KA2s @ 60Hz 156 KA2s 400 to 800 V 10 to 30 µs - 40 to 125 °C IT(AV) @ Ths IT(RMS) @ Ths ITSM I 2t V DRM /V RRM tq range TJ To Order PreviousSeries Datasheet ST223C..C Index Next Data Sheet ELECTRICAL SPECIFICATIONS Voltage Ratings Voltage V DRM /V RRM , maximum VRSM , maximum I DRM /I RRM max. Code repetitive peak voltage non-repetitive peak voltage @ TJ = TJ max. V V mA 04 400 500 08 800 900 Type number ST223C..C 40 Current Carrying Capability ITM Frequency ITM ITM 180oel 180oel Units 100µs 50Hz 400Hz 930 910 800 770 1430 1490 1220 1300 5870 3120 5240 2740 1000Hz 780 650 1430 1260 1880 1640 2500Hz 490 400 1070 920 1000 860 Recovery voltage Vr Voltage before turn-on Vd 50 50 50 50 50 50 Rise of on-state current di/dt 50 50 - - - - A/µs Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 47Ω / 0.22µF V DRM V DRM V DRM 47Ω / 0.22µF A V 47Ω / 0.22µF On-state Conduction Parameter I T(AV) ST223C..C Max. average on-state current @ Heatsink temperature Units Conditions 390 (150) A 180° conduction, half sine wave 55 (85) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 745 DC @ 25°C heatsink temperature double side cooled I TSM Max. peak, one half cycle, 5850 t = 10ms No voltage non-repetitive surge current 6130 t = 8.3ms reapplied 4920 t = 10ms 100% VRRM 5150 t = 8.3ms reapplied Sinusoidal half wave, 171 t = 10ms No voltage Initial TJ = TJ max t = 8.3ms reapplied t = 10ms 100% VRRM t = 8.3ms reapplied 2 I t 2 Maximum I t for fusing A 156 121 KA2s 110 I 2 √t Maximum I2√t for fusing 1710 KA2√s To Order t = 0.1 to 10ms, no voltage reapplied Previous Datasheet ST223C..C Series Index Next Data Sheet Fig. 3 - Current Ratings Characteristics Fig. 4 - Current Ratings Characteristics Fig. 5 - On-state Power Loss Characteristics Fig. 6 - On-state Power Loss Characteristics Fig. 7 - Maximum Non-repetitive Surge Current To Order Fig. 8 - Maximum Non-repetitive Surge Current Previous Datasheet Index Fig. 9 - On-state Voltage Drop Characteristics Fig. 11 - Reverse Recovered Charge Characteristics Next ST223C..C Data SheetSeries Fig. 10 - Thermal Impedance ZthJ-hs Characteristics Fig. 12 - Reverse Recovery Current Characteristics Fig. 13 - Frequency Characteristics To Order Previous Datasheet ST223C..C Series Index Next Data Sheet Fig. 14 - Frequency Characteristics Fig. 15 - Frequency Characteristics Fig. 16 - Maximum On-state Energy Power Loss Characteristics To Order Previous Datasheet Index Fig. 17 - Gate Characteristics To Order Next ST223C..C Data SheetSeries Previous Datasheet Index NextST223C..C Data SheetSeries On-state Conduction Parameter V TM Max. peak on-state voltage V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage rt1 Low level value of forward slope resistance rt2 ST223C..C Units 1.58 1.05 ITM= 600A, TJ = TJ max, tp = 10ms sine wave pulse V 0.88 mΩ IH 600 IL Typical latching current 1000 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 1.09 High level value of forward slope resistance Maximum holding current Conditions (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max. (I > π x IT(AV)), TJ = TJ max. 0.82 mA T J = 25°C, I T > 30A T J = 25°C, V A= 12V, Ra = 6Ω, I G= 1A Switching Parameter di/dt Max. non-repetitive rate of rise of turned-on current td tq Typical delay time Max. turn-off time ST223C..C Units 1000 A/µs 0.78 Min 10 Max 30 µs Conditions TJ = TJ max, VDRM = rated VDRM ITM = 2 x di/dt TJ= 25°C, VDM = rated VDRM, ITM = 50A DC, tp= 1µs Resistive load, Gate pulse: 10V, 5Ω source TJ = TJ max, ITM = 300A, commutating di/dt = 20A/µs VR = 50V, tp = 500µs, dv/dt: see table in device code Blocking Parameter ST223C..C Units dv/dt Maximum critical rate of rise of off-state voltage 500 V/µs IRRM IDRM Max. peak reverse and off-state leakage current 40 mA Conditions TJ = TJ max. linear to 80% VDRM, higher value available on request TJ = TJ max, rated V DRM/V RRM applied Triggering Parameter PGM Maximum peak gate power ST223C..C Units 60 PG(AV) Maximum average gate power 10 IGM Max. peak positive gate current 10 +VGM Maximum peak positive gate voltage 20 -VGM Maximum peak negative gate voltage IGT Max. DC gate current required to trigger VGT Max. DC gate voltage required to trigger Conditions W TJ = TJ max, f = 50Hz, d% = 50 A TJ = TJ max, tp ≤ 5ms V TJ = TJ max, tp ≤ 5ms 5 200 mA TJ = 25°C, VA = 12V, Ra = 6Ω 3 V IGD Max. DC gate current not to trigger 20 mA VGD Max. DC gate voltage not to trigger 0.25 V TJ = TJ max, rated VDRM applied To Order Previous Datasheet ST223C..C Series Index Next Data Sheet Thermal and Mechanical Specification Parameter ST223C..C TJ Max. operating temperature range -40 to 125 Tstg Max. storage temperature range -40 to 150 RthJ-hs Max. thermal resistance, DC operation single side cooled K/W 0.08 RthC-hs Max. thermal resistance, wt °C 0.17 junction to heatsink F Units Conditions 0.033 0.017 Mounting force, ± 10% 5900 N (600) (Kg) 50 g Case style DC operation single side cooled K/W case to heatsink Approximate weight DC operation double side cooled DC operation double side cooled TO - 200AB (A-PUK) See Outline Table ∆RthJ-hs Conduction (The following table shows the increment of thermal resistence RthJ-hs when devices operate at different conduction angles than DC) Conduction angle Sinusoidal conduction Rectangular conduction Single Side Double Side Units Conditions K/W TJ = TJ max. Single Side Double Side 180° 0.015 0.017 0.011 0.011 120° 0.019 0.019 0.019 0.019 90° 0.024 0.024 0.026 0.026 60° 0.035 0.035 0.036 0.037 30° 0.060 0.060 0.060 0.061 Ordering Information Table Device Code ST 22 3 C 08 C H K 1 1 2 3 4 5 6 7 8 9 10 1 - Thyristor 2 - Essential part number 3 - 3 = Fast turn off 4 - C = Ceramic Puk 5 - Voltage code: Code x 100 = VRRM (See Voltage Rating Table) 6 - C = Puk Case TO-200AB (A-PUK) 7 - Reapplied dv/dt code (for tq test condition) dv/dt - tq combinations available dv/dt (V/µs) 20 50 100 200 400 10 12 15 18 20 25 30 CN CM CL CP CK --- DN DM DL DP DK --- EN EM EL EP EK --- FN * FM FL * FP FK --- --HL HP HK HJ HH 8 - tq code 9 - 0 = Eyelet term. (Gate and Aux. Cathode Unsoldered Leads) 1 = Fast-on term. (Gate and Aux. Cathode Unsoldered Leads) 2 = Eyelet term. (Gate and Aux. Cathode Soldered Leads) 3 = Fast-on term. (Gate and Aux. Cathode Soldered Leads) 10 - Critical dv/dt: tq (µs) *Standard part number. All other types available only on request. None = 500V/µsec (Standard value) L = 1000V/µsec (Special selection) To Order Previous Datasheet Index NextST223C..C Data SheetSeries Outline Table ANODE TO GATE CREEPAGE DISTANCE: 7.62 (0.30) MIN. STRIKE DISTANCE: 7.12 (0.28) MIN. 19 (0.75) 0.3 (0.01) MIN. DIA. MAX. 13.7 / 14.4 (0.54 / 0.57) 0.3 (0.01) MIN. 19 (0.75) GATE TERM. FOR 1.47 (0.06) DIA. PIN RECEPTACLE DIA. MAX. 38 (1.50) DIA MAX. Case Style TO-200AB (A-PUK) All dimensions in millimeters (inches) 2 HOLES 3.56 (0.14) x 1.83 (0.07) MIN. DEEP 6.5 (0.26) 4.75 (0.19) 25°± 5° 42 (1.65) MAX. 28 (1.10) Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics To Order